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Ultafine Lithography by Oxide Ion Resists and Its Applications.

Research Project

Project/Area Number 01550304
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 電子機器工学
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KOSHIDA Nobuyoshi  Tokyo University of Agriculture and Technology, Faculty of Technology, Professor, 工学部, 教授 (50143631)

Project Period (FY) 1989 – 1990
Project Status Completed (Fiscal Year 1990)
Budget Amount *help
¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1990: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1989: ¥1,500,000 (Direct Cost: ¥1,500,000)
Keywordsmicrolithography / inorganic resist / focused in beam / ULSI process / thin amorphous film / transition metal oxide / metallization / refractory metals / 微細加工 / リソグラフィ / 高融点金属
Research Abstract

(1) Microlithographic Properties
Thin amorphous films of WO_3, MoO_3, V_2O_5 and a mixture theirof were formed on Si wafers and exposed to a 20-70 keV Ga^+ FIB. Development after writing was performed by chemical etching. The basic properties of these films as an inorganic resist were evaluated in terms of the resist sensitivity, the contrast, the dry etching durability of the delineated resist patterns and the selectivity with respect to Si. The details of the characteristics can be explained from the physical and chemical properties of the resist material.
(2) Resist Mechanism and Limiting Resolution
The resist mechanism was made clear by the analyses of the exposure characteristics, surface analyses of the exposed films and the electrical measurement. Studies of line exposure and measurements of the beam profile of the FIB indicate that the limiting resolution of this resist work is determined by the FIB diameter, owing to its high contrast capability.
(3) Application Studies
Thin amorphous films of MoO_3 were deposited by electron beam evaporation onto Si wafers, and were exposed to 30-50 keV Ga^+ FIB. Fine line patterns of MoO_3, developed by chemical etching after line exposure, were reduced to Mo by heat treatment in H_2 atmosphere. From measurements of the line width before and after reduction as a function of the ion dose, it was demonstrated that 50-100 nm width fine patterns of Mo can be formed on Si substrates. This technique is potentially useful for fabrication of lowerーsubmicron devices, quantum wire and X-ray mask.

Report

(3 results)
  • 1990 Annual Research Report   Final Research Report Summary
  • 1989 Annual Research Report
  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] N. Koshida: "Ion resist properties of thin films of transition metal oxides." Nucl. Instrum. Methods B. 39. 736-738 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] N. Koshida: "Focused ion beam lithography with transition metal oxide resists." Jpn. J. Appl. Phys.28. 2090-2094 (1989)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] N. Koshida: "Microlithographic behavior of transition metal oxide resists exposed to focused ion beam." J. Vac. Sci. Technol. B. 8. 1093-1096 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] N. Koshida: "Focused ion beam fabrication of fine metal structures by oxide resists." Jpn. J. Appl. Phys.29. 2299-2032 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] 吉田 和由: "酸化物レジストによる集束イオンビ-ム加工と金属細線の作成" 電気化学および工業物理化学. 59. (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] N. Koshida: "50 nm metal line fabrication by focused ion beam and oxide resists." Jpn. J. Appl. Phys.30. (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1990 Final Research Report Summary
  • [Publications] N.Koshida: "Ion resist properties of thin films of transition metal oxides." Nucl.Instrum.Methods B. 39. 736-738 (1989)

    • Related Report
      1990 Annual Research Report
  • [Publications] N.Koshida: "Focused ion beam lithography with transition metal oxide resists." Jpn.J.Appl.Phys.28. 2090-2094 (1989)

    • Related Report
      1990 Annual Research Report
  • [Publications] N.Koshida: "Microlithographic behavior of transition metal oxide resists exposed to focused ion beam." J.Vac.Sci.Technol.B. 8. 1093-1096 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] N.Koshida: "Focused ion beam fabrication of fine metal structures by oxide resists." Jpn.J.Appl.Phys.29. 2299-2032 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 吉田 和由: "酸化物レジストによる集束イオンビ-ム加工と金属細線の作成" 電気化学および工業物理化学. 59. (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] N.Koshida: "50 nm metal line fabrication by focused ion beam and oxide resists." Jpn.J.Appl.Phys.30. (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] N.Koshida: "Ion Resist Properties of Thin Films of Transition Metal Oxides" Nucl.Instrum.& Methods in Phys.Res.B. 39. 736-738 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] N.Koshida: "Focused Ion Beam Lithography with Transition Metal Oxide Rsists" Jpn.J.Appl.Phys.28. 2090-2094 (1989)

    • Related Report
      1989 Annual Research Report
  • [Publications] N.Koshida: "Focused Ion Beam Fabrication of Fine Metal Structures by Oxide Resists" Jpn.J.Appl.Phys.29. (1990)

    • Related Report
      1989 Annual Research Report
  • [Publications] N.Koshida: "Microlithographic Behavior of Transition Metal Oxide Ion Resists" J.Vac.Sci & Technol.B. 8. (1990)

    • Related Report
      1989 Annual Research Report

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Published: 1989-04-01   Modified: 2016-04-21  

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