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Study on optically controlled optical devices

Research Project

Project/Area Number 02302048
Research Category

Grant-in-Aid for Co-operative Research (A)

Allocation TypeSingle-year Grants
Research Field 電子機器工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

SUEMATSU Yasuharu  Tokyo Inst. of Tech., President LE OF POSITION, 学長 (40016316)

Co-Investigator(Kenkyū-buntansha) ASADA Masahiro  Tokyo Inst. of Tech., Faculty of Engineering, Assoc. Professor, 工学部, 助教授 (30167887)
ARAI Shigehisa  Tokyo Inst. of Tech., Faculty of Engineering, Assoc. Professor, 工学部, 助教授 (30151137)
FURUYA Kazuhito  Tokyo Inst. of Tech., Faculty of Engineering, Professor, 工学部, 教授 (40092572)
SUETA Tadashi  Osaka University, Faculty of Engineering, Professor, 基礎工学部, 教授 (20029408)
IGA Kenichi  Tokyo Inst. of Tech., Precision and Intelligence, Professor, 精密工学研究所, 教授 (10016785)
Project Period (FY) 1990 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥9,500,000 (Direct Cost: ¥9,500,000)
Fiscal Year 1991: ¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 1990: ¥5,100,000 (Direct Cost: ¥5,100,000)
KeywordsOptically controlled optical devices / Quantum well / Optical switch / Optical modulator / Quantum box / Optical bi-stable devices / Nonlinear optical devices
Research Abstract

The main purpose of this study is to establish the basis of optically controlled optical devices. Specific results obtained in this research are as follows.
(a) Crystal growth for optically controlled optical devices :
Ultra-fine structure such as Quantum-wire and quantum-box structure were fabricated using OMVPE growth technology.
(b) Fabrication and basic theory of optically controlled optical devices :
Nonlinear optical devices using semiconductor quantum well structure, optically controlled modulation devices using sub-band transition of quantum well structure, and integration type optical switch/modulator were fabricated and light emitting devices using the spontaneous emission control from quantum micro cavity was proposed.
(c) Characteristics of optically controlled optical devices :
The characteristics of optically controlled optical devices were theoretically investigated focusing on their ultra high speed operation.

Report

(3 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] M.Asada: "Optical switch using semiconductor quantum well structure" Nonlinear Optics. 1. 165-177 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] K.Shimomura: "Semiconductor intersectional optical switch using positive refractive index variation" Trans.IEICE. E74. 378-383 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] K.G.Ravikumar: "Field-induced refractive index variation sepctrum in a GaInAs/InP quantum wire structure" Appl.Phys.Lett.58. 1015-1017 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] K.G.Ravikumar: "Analysis of electric field effect in quantum-box structure and its application to low-loss intersectional type optical switch" IEEE J.Lightwave Technol. 10. 1376-1385 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T.Aizawa: "Observation of field-induced refractive index variation in quantum box structure" IEEE Photon.Technol.Lett.3. 907-909 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Y.Miyake: "Room temperature operation of GaInAs-GaInAsP-InP SCH multi-quantum film laser with narrow wire-like active region" IEEE Photon.Technol.Lett.3. 191-192 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M. Asada: "Optical switch using semiconductor quantum well structure" Nonlinear Optics. 1. 165-177 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] K. Shimomura: "Semiconductor intersectional optical switch using positive refractive index variation" Trans. IEICE. E74. 378-383 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] K. G. Ravikumar: "Field-induced refractive index variation spectrum in a GaInAs/InP quantum wire structure" Appl. Phys. Lett.58. 1015-1017 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] K. G. Ravikumar: "Analysis of electric field effect in quantum-box structure and its application to low-loss intersectional type optical switch" IEEE J. Lightwave Technol.10. 1376-1385 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Aizawa: "Observation of field-induced refractive index variation in quantum box structure" IEEE Photon. Technol. Lett.3. 907-909 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Y. Miyake: "Room temperature operation of GaInAs-GaInAsP-InP SCH multi-quantum-film laser with narrow wire-like active region" IEEE Photon. Tech. Lett.3. 191-192 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M.Asada: "Optical switch using semiconductor quantum well structure" Nonlinear Optics. 1. 165-177 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] K.Shimomura: "Semiconductor intersectional optical switch using positive refractive index variation" Trans.IEICE. E74. 378-383 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] K.G.Ravikumar: "Fieldーinduced refractive index variation sepctrum in a GaInAs/InP quantum wire structure" Appl.Phys.Lett.58. 1015-1017 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] K.G.Ravikumar: "Analysis of electric field effect in quantumーbox structure and its application to lowーloss intersectional type optical switch" IEEE J.Lightwave Technol. 10. 1376-1385 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Aizawa: "Observation of fieldーinduced refractive index variation in quantum box structure" IEEE Photon.Technol.Lett.3. 907-909 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] Y.Miyake: "Room temperature operation of GaInAsーGaInAsPーInP SCH multiーquantumーfilm laser with narrow wireーlike active region" IEEE Photon.Technol.Lett.3. 191-192 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] K.Shimomura: "Analysis of semiconductor intersectional optical swich/modulator" IEEE J.Quantum.Electron.26. 883-892 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] T.Yamamoto: "OMVPE buried ultraーfine periodic structures in GaInAs and InP" Electron.Lett.26. 875-876 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] T.Kikugawa: "Observation of field induced refractive index variation in GaInAs/InP quantum wire(QW)structure" Electron.Lett.26. 1012-1013 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] M.Watanabe: "Low temperature (〜420℃) epitaxial growth of CaF2/Si(111)by IonizedーClusterーBeam technique" Japan.J.Appl.Phys.29. 1803-1804 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] K.G.Ravikumar: "Lowーdamage GaInAs(P)/InP nanometer structure by lowーpressure ECRーRIBE" Japan.J.Appl.Phys.29. L1744-L1746 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] Y.Miyamoto: "GaInAs/InP Hot electron transistors grown by OMVPE" “Gallium Arsenide and Related Compounds 1989,"edited by T.Ikoma and H.Watanabe. 707-712 (1990)

    • Related Report
      1990 Annual Research Report

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Published: 1990-04-01   Modified: 2016-04-21  

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