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Study on Ultra High Speed Integrated Circuit Employing Metals in the Heart of the Device Structure

Research Project

Project/Area Number 02402031
Research Category

Grant-in-Aid for General Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionTohoku University

Principal Investigator

OHMI Tadahiro  Professor, Dept. Electronic Engineering Tohoku University, 工学部, 教授 (20016463)

Co-Investigator(Kenkyū-buntansha) MORITA Mizuho  Associate Professor, Dept. Electronic Engineering Tohoku University, 工学部, 助教授 (50157905)
SHIBATA Tadashi  Associate Professor, Dept. Electronic Engineering Tohoku University, 工学部, 助教授 (00187402)
Project Period (FY) 1990 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥26,300,000 (Direct Cost: ¥26,300,000)
Fiscal Year 1991: ¥8,400,000 (Direct Cost: ¥8,400,000)
Fiscal Year 1990: ¥17,900,000 (Direct Cost: ¥17,900,000)
KeywordsUltra-High Speed Integrated Circuit / Low Temperature Processing / Metal-Silicon Contact / Ultra Clean Technology / Low-Energy Ion Bombardment / H_2-Plasma Cleaning / Ion Implantation / Self-Aligne Metal-Gate Mosfet / ウルトラクリ-ンイオン注入 / 自己整合金属ゲ-トMOSFET / 超高速LSI / 超高密度LSI / 金属・半導体接合 / 低エネルギイオン照射 / 低エネルギイオンエッチング / アウトガスフリ-レジストプロセス
Research Abstract

Realization of ultra high speed integrated circuits using ultimate-small dimension devices requires the abundant use of low-resistance metals in the heart of device structures. For this purpose, the development of technologies for high quality metal thin film formation, ideal metal/silicon contact formation and low temperature processing is most essential. We have attained great achievements in these technologies by employing ultra clean technologies.
High quality metal films have been successfully grown using low kinetic-energy particle bombardment process. Excellent surface smoothness of Ta and Ti thin films have been obtained by the optimization of ion energy and flux conditions as well as by the employment of low-energy H_2 plasma cleaning techniques. Almost single crystal Cu thin films have been also grown on SiO_2 by the combination of low-energy ion bombardment and following thermal anneal. The Cu interconnects thus formed exhibit very large resistance against electromigration failure, ensuring 3 to 4 orders of magnitude larger lifetime as compared to conventional AI interconnects. By combining these film formation processes with clean nitrogen seal processing, ideal metal/silicon interfaces can be successfully formed. Use of metals in the heart of device structures very much depends on the temperature of pn junction formation. We have developed ultraclean ion implantation technology that enables us to anneal As implanted silicon at temperatures as low as 450゚C. We fabricated metal-gate self-aligned MOSFET's using this low temperature annealing process. It has been experimentally shown that the metal gate MOS transistor operates much faster than silicon gate MOSFET's when the gate-capacitance-load is sufficiently large for driving large current. Thus the basic technologies necessary for ultra high speed device fabrication as well as the actual device structures employing these advanced processes have been successfully developed in this research project.

Report

(3 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • Research Products

    (45 results)

All Other

All Publications (45 results)

  • [Publications] T.Ohmi: "Large-Electromigration-Resistance Copper Interconnect Technology for Subhalf-micron ULSI'S" Technical Digest,International Electron Devices Meeting 1991,Washington D.C.285-288 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T.Ohmi: "Formation of Copper Thin Films by a Low Kinetic Energy Particle Process" Journal of Electrochemical Societh. 138. 1089-1097 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M.Otsuki: "High Performance Copper Metallezation for ULSI Interconnects" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 186-188 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T.Nitta: "Electrical Properties of Giant-Grain-Copper Thin Films Formed by a Low Kinetic Energy Particle Process" Journal of Electrochemical Society. (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T.Nitta: "Evaluating the Large Electromigration Resistance of Copper Intercennects Emplaying a Newly-Developed Life-Test Method" Journal of Electrochemical Society.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Y.Kato: "Elimination of Metal-Sputtering Contamination in Ion Implanter for Low-Leakage-Current p-n Junction Formation" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 565-567 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T.Yoshie: "Ion Flux Effect in Low Temperature silicon Epitaxy by Low-Energy Ion Bombardment" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 41-43 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Uetake: "In-Situ Substrate Surface Cleaning for Low Temperature Silicon Epitaxy By Hydogen-Added Low-Energy Argon Ion Bombardment" Proceedings of International Symposium on Automated IC Manufacturing. (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Y.Aoki: "Formation of High Quality Refractary-Metal Thin Films by Low-Energy Ion Bombardment" Proceedings of International Symposium on Automated IC Manufacturing. (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T.Ohmi: "Self-Aligned Aluminum-Gate MOSFET'S Having Ultra Shallow Junctions Formeel by 450C Furnace Annealing" IEEE Electron Device Letters.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Kuwabara: "Ideal Metal/silicon Contact Formation By Clean-Nitrogen-Seal Processing" Proceedings of the 3rd International Symposium on ULSI Science and Technology. 321-329 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. H. Goto, M. Sasaki, T. Ohmi, T. Shibata, A. Yamagami, N. Okamura and O. Kamiya: "A Low Damage, Low Contaminant Plasma Processing System Utilizing Energy Clean Technology" IEEE Trans. Semiconductor Manufacturing. 4, No. 2. 111-120 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. -D. Lo^^< f>we, H. H. Goto, and T. Ohmi: "Control of Ion Energy and Flux in a Dual Radio Frequency Excitation Magnetron Sputtering Discharge" J. Vac. Sci. Technol.A9(6). 3090-3099 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. H. Goto, H. -D. Lowe, T. Ohmi, T. Shibata, A. Yamagami, N. Okamura, and O. Kamiya: "Development of Dual Excitation Frequency Plasma Equipment (DEPE) to Minimize Wafer Surface Damage and Chamber Material Contamination" Proc. 6th Symp. Automated Integrated Circuits Manufacturing. The Electrochemical Soc.167-178 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. H. Goto, M. Sasaki, T. Ohmi, T. Shibata, A. Yamagami, N. Okamura, and O. Kamiya: "Minimizing Wafer Surface Damage and Chamber Material Contamination in New Plasma Processing Equipment" Japanese Journal of Appl. Phys.29, No. 12. L2395-L2397 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Ohmi: "Ultra-Clean Low Temperature Si Processes under the Assistance of Energy Controlled Ion Bombardment" Ext. Abstract 19th International Conf. Solid State Devices and Materials, Yokohama. 481-483 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Yoshie, M. Hirayama, and T. Ohmi: "Ion Flux Effect in Low Temperature Silicon Epitaxy by Low-Energy Ion Bombardment" 41-43

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Kuwabara, M. Otsuki, and T. Ohmi: "Ideal Metal/Silicon Contact Formation by Clean-Nitrogen-Seal Processing" Proc. 3rd Int. Symp. ULSI Science and Technology. The Electrochem. Soc.321-329 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Uetake, K. Morizuka, and T. Ohmi: "In-Situ Substrate Surface Cleaning for Low Temperature Silicon Epitaxy by Hydrogen Added Low-Energy Argon Ion Bombardment" Proc. Int. Symposium on Automated IC Manufacturing.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Y. Aoki, S. Aoyama, H. Wakamatu, J. Watanabe, and T. Ohmi: "Formation of High Quality Refractory-Metal Thin Films by Low-Energy Ion Bombardment" Proc. Int. Symposium on Automated IC Manufacturing.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M. Otsuki, T. Takewaki, H. Kuwabara, T. Shibara, T. Ohmi, and T. Nitta: "High Performance Copper Metallization for ULSI Interconnects" Ext. Abst. 1991 Int. Conf. Solid State Devices and Materials, Yokohama. 186-188 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Ohmi, T. Saito, M. Otsuki, and T. Shibata: "Formation of Copper Thin Films by Low Kinetic Energy Particle Process" J. Electrochem. Soc.138, No. 4. 1089-1097 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Ohmi, T. Hoshi, T. Yoshie, T. Takewaki, M. Otsuki, T. Shibata, and T. Nitta: "Large-Electromigration-Resistance Copper Interconnect Technology for Subhalf Micro ULSI's" Technical Digest, IEEE Int. Electron Devices Meeting, Washington D. C.285-288 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Nitta, T. Ohmi, M. Otsuki, T. Takewaki, and T. Shibata: "Electrical Properties of Giant-Grain-Copper Thin Films Formed by a Low Energy Particle Process" J. Electrochem. Soc.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Nitta, T. Ohmi, T. Hoshi, S. Sakai, K. Sakaibara, S. Imai, and T. Shibata: "Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly-Developed Accelerated Life-Test Method" J. Electrochem. Soc.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Shibata, A. Okita, Y. Kato, T. Ohmi, and T. Nitta: "Dig. Tech. Papers, 1990 Symp." VLSI Technology, Honolulu. 63-63 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Nitta, T. Ohmi, Y. Ishihara, A. Okita, T. Shibata, J. Sugiura, and N. Ohwada: "Reverse-Bias Current Reduction in Low-Temperature-Annealed silicon pn Junction by Ultra Clean Ion-Implantation Technology" J. Appl. Phys.67, No. 12. 7402-7412 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Y. Kato, S. Shimonishi, T. Ohmi, T. Shibata, and T. Nitta: "Elimination of Metal Sputter Contamination in Ion Implanter for Ion-Leakage-Current pn Junction Formation" Ext. Abst. 1991 Int. Conf. Solid State Device and Materials, Yokohama. 565-567 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T. Ohmi, S. Shimonishi, K. Kotani, T. Shibata, and T. Nitta: "Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junction Formed by 450゚C Furnace Annealing" IEEE Electron Device Letters.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] T.Ohmi: "LargeーElectromigrationーResistance Copper Interconnect Technolgy for Subhalfーmicron ULSI'S" Technical Digest,International Electron Devices meeting 1991,Washington D.C.285-288 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Ohmi: "Formation of Copper Thin Films by a Low Kinetic Energy Particle Process" Journal of Electrochemical Society. 138. 1089-1097 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] M.Otsuki: "High Performance Copper Metallization for ULSI Interconnects" Extended Abstracts of the 1991 International Conference on Solid State Deviced and Materials. 186-188 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Nitta: "Electrical Propertles of GiantーGrainーCopper thin Films Formed by a Low Kinetic Energy Particle Process" Journal of Electrochemical Society. (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Nitta: "Evaluating the Large Electromigration Resistance of Copper Interconnects Emplaying a NewlyーDeveloped LifeーTest method" Journal of Electrochemical Society.

    • Related Report
      1991 Annual Research Report
  • [Publications] Y.Kato: "Elimination of MetalーSputtering Contamination in Ion Implanter for LowーLeakageーCurrent pーn Junction Formation" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 565-567 (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Yoshie: "Ion Flux Effect in Low Temperature Silicon Epitaxy by LowーEnergy Ion Bombardment" Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials. 41-43 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Uetake: "Inーsitu Substrate Surface Cleaning for LowーTemperature Silicon Epitaxy By HydogenーAddeol LowーEnergy Argon Ion Bombardment" Proceedings of Internatimal Symposium on Automated IC Manufacturing. (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] Y.Aoki: "Formation of High Quality RefractaryーMetal Thin Films by LowーEnergy Ion Bombardment" Proceedings of Internatimal Symposium on Automated IC Manufacturing. (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Ohmi: "SelfーAligned AluminumーGate MOSFET'S Having Ultra Shallow Junctions Formed by 450℃ Furnace Annealing" IEEE Electron Device Letters.

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Goto: "Advanced Plasma Process Equipment without Wafer Surface Damage and Chamber Material Contamination" Ext.Abstract of 22nd Conf.Solid State Devices and Materials,1990. 1147-1150 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Goto: "Minimizing Wafer Surface Damage and Chamber Material Contamination in New Plasma Processing Equipment" Japanes J.Appl.Phys.29. L2395-L2397 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 桑原 英司: "自然酸化膜フリ-プロセスによる理想的金属・半導体界面の形成" 半導体・集積回路技術シンポジウム講演論文集第39回. 103-111

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Kuwabara: "Ideal Metal/Silicon contact formation by cleanーnitrogenーseal processing" Proc.3rd Int.Symp.VLSI Science and Technology.

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Shimada: "Optimizing Resist Development Process for Reliable Fine Pattern Formation" Ext.Abstract,ECS spring meeting,1991.

    • Related Report
      1990 Annual Research Report
  • [Publications] M.Onodera: "Ext.Abstract,ECSーSpring Meeting,1991" OutgasーFree Resist Processing For Ultra Clean Process Technologies,

    • Related Report
      1990 Annual Research Report

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Published: 1990-04-01   Modified: 2016-04-21  

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