• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Growth and Characterization of Diluted Magnetic III-V Compound Semiconductors

Research Project

Project/Area Number 02452142
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionHokkaido University

Principal Investigator

OHNO Hideo  Hokkaido Univ., Dept. of Electrical Eng., Assoc. Professor, 工学部, 助教授 (00152215)

Co-Investigator(Kenkyū-buntansha) 赤沢 正道  北海道大学, 工学部, 助手 (30212400)
飯塚 浩一  北海道大学, 工学部, 助手 (30193147)
長谷川 英機  北海道大学, 工学部, 教授 (60001781)
Project Period (FY) 1990 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥7,100,000 (Direct Cost: ¥7,100,000)
Fiscal Year 1991: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1990: ¥6,600,000 (Direct Cost: ¥6,600,000)
KeywordsDiluted Magnetic Semiconductors / III-V Compounds / InAs / InMnAs / MBE / Compound Semiconductors / Anomalous Hall Effect / 分子線エピタキシ / 半磁性半導体 / 磁気抵抗効果
Research Abstract

Molecular beam epitaxial (MBE) growth and electric and magnetic properties of diluted magnetic III-V semiconductors, especially (In, Mn) As, are studied. Following is a summary of the research results. Molecular Beam Epitaxial Growth : Maximum Mn concentration that can be incorporated into InAs lattice without having second phase (which is MnAs) is critically dependent on the growth temperature during MBE growth. At 300゚C, x (in In_<1-x>Mn_xAs) has to be<0.03 and the conduction is p-type whereas at 200゚C, x<0.25 and n-type.
Characterization of Epitaxial layers : (1) Magnetism All n-type samples are paramagnetic and the direct interaction between Mn ions is antiferromagnetic with nearest neighbor J of -1.6 K. All p-type samples are paramagnetic at medium to high temperatures, but show spontaneous magnetization at low temperatures. Paramagnetic component which saturates only at high magnetic fields (4 to 9 T) is also present. The spontaneous magnetization makes up for 25 % of saturation m … More agnetization at the lowest temperature (1.4K) investigated. (2) Electrical Properties n-type samples show negative magnetoresistance at low temperatures. No hysteresis is observed. The Hall resistance of p-type samples is dominated by anomalous Hall effect. At temperatures below 7.5 K, hysteresis appears in B dependence of Hall resistance together with negative magnetoresistance extending to high magnetic fields. Hysteresis is only observed in p-type samples. This can be explained by the presence of large magnetic polarons with canted spins inside. The origin of the canting is believed to be the exchange interaction between holes and Mn ions. The interaction is mostly ferromagnetic with spin texture (i. e. canting) due to spin-orbit interaction of to Mn-Mn antiferromagnetic interaction. Rotation of polarons gives rise to the spontaneous magnetization, whereas the alignment of spins with high magnetic fields results in paramagnetic response at high fields. This is the first observation of weak ferromagnetism due to localized carrier-spin exchange in diluted magnetic semiconductors. Less

Report

(3 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • Research Products

    (17 results)

All Other

All Publications (17 results)

  • [Publications] H.Munekata: "Epitaxy of III-V diluted magnetic semiconductor materials" J.Vac.Sci.Technol.B8. 176-180 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S.von Molnar: "New diluted magnetic semiconductors based on III-V compounds" J.Magnetism and Magnetic Materials. 93. 356-364 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Munekata: "P-Type diluted magnetic III-V semiconductors" J.Crystal Growth. 111. 1011-1015 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Ohno: "New diluted magnetic III-V semiconductors" J.Appl.Phys.69. 6103-6108 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Ohno: "Magnetotransport properties of p-type(In,Mn)As diluted magnetic III-V semiconductors"

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Munekata, H. Ohno, S. von Molnar, Alex Harwit, Armin Segmuller, and L. L. Chang: ""Epitaxy of III-V Diluted Magnetic Semiconductor Materials, "" J. Vac. Sci. Technal.B8(2). 176-180 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S. von Molnar, H. Munekata, H. Ohno, and L. L. Chang: ""New Diluted Magnetioc Semiconductors Based on III-V Compounds, "" J. Magnetism and Magnetic Materials. 93. 356-364 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Munekata, H. Ohno, R. R. Ruf, R. J. Gambino, and L. L. Chang: ""P-type Diluted Magnetic III-V Semiconductors, "" J. Crystal Growth. 111. 1011-1015 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Ohno, H. Munekata, S. von Molnar, and L. L. Chang: ""New Diluted Magnetic III-V Semiconductors, "" J. Appl. Phys.69(8). 6103-6108 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Ohno, H. Munekata, T. Penney, S. von Molnar, L. L. chang: ""Magnetotransport Properties of P-type (In, Mn) As Diluted Magnetic III-V Semiconductors, ""

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H.Munekata: "Epitaxy of IIIーV diluted magnetic semiconductor materials" J.Vac.Sci.Technol.B8. 176-180 (1990)

    • Related Report
      1991 Annual Research Report
  • [Publications] S.von Molnar: "New diluted magnetic semiconductors based on IIIーV compounds" J.Magnetism and Magnetic Materials. 93. 356-364 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Munekata: "Pーtype diluted magnetic IIIーV semiconductors" J.Crystal Growth. 111. 1011-1015 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Ohno: "New diluted magnetic IIIーV semiconductors" J.Appl.Phys.69. 6103-6108 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Munekata: "Epitaxy of IIIーV diluted magnetic semiconductor materials" J.Vacuum Science Technology. B8. 176-180 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] S.von Molnar': "New diluted magnetic semiconductors based on IIIーV compounds" J.Magnetism and Magnetic Materials.

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Ohno: "New IIIーV diluted magnetic semiconductors" J.Appl.Phyo.

    • Related Report
      1990 Annual Research Report

URL: 

Published: 1990-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi