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Growth and properties of ZnCdSSe new alloy semiconductors for short wavelength laser applications

Research Project

Project/Area Number 02452147
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionKyoto University

Principal Investigator

FUJITA Shigeo  Kyoto Univ. Dept. Elect. Eng. professor, 工学部, 教授 (30026231)

Co-Investigator(Kenkyū-buntansha) KAWAKAMI Yoichi  Kyoto Univ. Dept. Elect. Eng. Assoc. Prof. Res. Assoc., 工学部, 助手 (30214604)
FUJITA Shizou  Kyoto Univ. Dept. Elect. Eng. Assoc. Prof. Res. Assoc., 工学部, 助協授 (20135536)
Project Period (FY) 1990 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥6,500,000 (Direct Cost: ¥6,500,000)
Fiscal Year 1991: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1990: ¥4,700,000 (Direct Cost: ¥4,700,000)
KeywordsShort Wavelength Lasers / Double Heterostructure / Band Discontinuity / New Alloy Semiconductor / 有機金属分子線成長
Research Abstract

1. Procedures for calculating band gaps and lattice constants in the ZnCdSSe new alloy semiconductor system, and for estimating band lineups in their multilayered structures were established. The results demonstrated the ZnCdSe/ZnSSe blue-green laser and ZnSSe/ZnCdSSe ultraviolet laser structures coherently grown on GaAs and GaP substrates, respectively.
2. Growth conditions of ZnSe, ZnSSe, ZnCdSe, ZnCdS, and ZnCdSSe in metalorganic molecular beam epitaxy(MOMBE)for precise lattice matching or for coherent growth on GaAs substrates were successfully established. Sulfur passivation pretreatment of GaAs was found, to be effective for atomically controled growth and for high quality epilayers and epilayer/substrate interfaces. In situ reflactive high energy electron diffraction(RHEED)monitoring was applied for the growth control of multilayered structures and successfully resulted in well defined structures.
3. From crystaline and optical properties of epilayers and multilayered structures, … More heterointerface properties, interdiffusion, and band discontinuity were characterized.
4. Doping of Cl and N was found to be promising for n- and p-type conductivity control, respectively.
5. Optically pumped laser action was confirmed in the double heterostructures. Characterization of threshold power, quantum efficiency, and polarization revealed that band discontinuity was one of the important factors for high performance lasers.
6. ZnCdSSe multilayered structures on GaP were fabricated and their fundamental properties were characterized. It was found that they possessed type-I band structure and carriers were effectively confined in well layers ; there features were promising for applications to lasers in ultraviolet region.
Throughout the study, it was found that the ZnCdSSe new alloy semiconductor system possessed promising characteristics for short wavelength region laser applications ; it is strongly expected that this new alloy system well contribute to open a window for future optoelectronics. Less

Report

(3 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] 大中道 崇浩: "On the properties of ZnSe/(NH_4)_2S_Xーpretreated GaAs heterointerfaces" Japanese Journal of Applied Physics. 30. 1668-1669 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 大中道 崇浩: "Electrical properties of ZnSeーbased semiconductors/(NH_4)_2S_Xーpretreated GaAs heterointerfaces" Extended Abstracts of the 1991 Internation Conference on Solis State Devices and Materials. 695-697 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 市野 邦男: "Metalorganic molecular beam epitaxy of ZnCdSSe quaternary alloys on GaAs substrate" Japanese Jopurnal of Applied Physics. 30. L1624-L1626 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 市野 邦男: "Fabrication of ZnCdSSe alloys by MOMBE and their applications for doubleーhetero and quantumーwell structures" Journal of Crystal Growth. 117. 527-531 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 市野 邦男: "IIーVI族半導体ヘテロ構造の設計と作製" 応用物理. 61. 117-125 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 市野 邦男: "ZnCdSSeーZnSSe doubleーheterostructure on Gap substrates for ultravioletーregion optoelectronic devices" Journal of Aoolied Physics.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Takahiro Ohnakado: ""On the properties of ZnSe/ (NH_4) _2S_x -pretreated GaAs heterointerfaces"" Jpn. J. Appl. Phys.30 (8). 1668-1669 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Takahiro Ohnakado: ""Electrical properties of ZuSe-based semiconductor/ (NH_4) _2S_x -pretreated GaAs heterointerfaces"" Extend. Abst. 1991 Int. Conf. Solid State Devices and Mater. 695-697 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Kunio Ichino: ""Metalorganic molecular beam epitaxy of ZnCdSSe quaternary alloys on GaAs substrate"" Jpn. J. Appl. Phys.30 (9B). L1624-L1626 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Kunio Ichino: ""Fabrication of ZnCdSSe alloy by MOMBE and their applications for double-hetero quantum-well structures"" J. Cryst. Growth. 117 (1-4). 527-531 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Kunio Ichino: ""Design and fabrication of II-VI semiconductor heterostructures "(in Japanese)" Oyo Buturi. 61 (2). 117-125 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Kunio Ichino: ""ZnCdSSe-ZnSSe double heterostructure on GaP substrate for ultraviolet-region optoelectronic devices"" J. Appl. Phys.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 市野 邦男: "Fabrication of ZuCdSSe alloys by MOMBE and their applications for doubleーhetero and quantumーwell Structures" Journal of Crystal Growth.

    • Related Report
      1991 Annual Research Report
  • [Publications] 市野 邦男: "ZnCdSSeーZnSSE doubleーheterostructure on GaP Substrates for ultrauioletーregion optoelectronic devices" Journal of Applied Physics.

    • Related Report
      1991 Annual Research Report
  • [Publications] 市野 邦男: "Metalorganic Molecular Beam Epitaxy of ZncdSSe Quaternary Alloy Semiconductors" Journal of Crystal Growth.

    • Related Report
      1990 Annual Research Report
  • [Publications] 川上 養一: "Design of Short Wavelength Region Semiconductor Laser Structures using ZnCdSSe Quaternary Alloys" Jaurnal of Applied Physics.

    • Related Report
      1990 Annual Research Report

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Published: 1990-04-01   Modified: 2016-04-21  

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