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The Study on the Effect of Nonstoichiometry on Thermal Equilibrium Defects in Intermetallic Compounds by Positron Annihilation

Research Project

Project/Area Number 02452230
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Physical properties of metals
Research InstitutionUniversity of Tsukuba

Principal Investigator

TANIGAWA Shoichiro  University of Tsukuba Institute of Materials Science Associate Professor, 物質工学系, 助教授 (90011080)

Project Period (FY) 1990 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥5,900,000 (Direct Cost: ¥5,900,000)
Fiscal Year 1991: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1990: ¥4,400,000 (Direct Cost: ¥4,400,000)
Keywordsintermetallic compound / positron annihilation / nonstoichiometry
Research Abstract

The effect of nonstoichiometry on thermal equilibrium defects in intermetallic compounds was studied by positron annihilation. The measurements of positron annihilation were carried out by means of the positrdn lifetime spectroscopy, the Doppler broadening spectroscopy, the two dimensional angular correlation of annihilation radiations and the slow positron analysis. The following results were obtained :
(1) Defects introduced by nonstoichiometry in TiAl and TiAl_3 :
The positron annihilation characteristics were measured as a function of the alloy compositions of the above alloys in their one phase region. As a result, it was found that the concentration of vacancy-type defects introduced by the nonstoichiometric composition is quite lower than the detection limit of the positron annihilation technique. This result clearly shows that the extra alloy elements form the antisite defects. From the thermal equilibrium experiment performed by the use of ^<48>V positon source, which was for the first time developed in the present research program, a greater num ber of divacancies were introduced in these intermetallic compounds as compared with In pure metals.
(2) Determination of three dimensional momentum space density of electrons in beta'-AgZn :
By the measurements of 2D-ACAR spectra with different crystal orientations followed the image reconstruction technique, the three dimensional momentum space density of electrons in beta'-AgZn was determined. The experimentally determined density coincides well with the theoretically expected one. In this case, the extra alloy elements also occupy the antisite lalttice points.
In addition, the determination of thd densities in NiAl, Ni_3Al and NbSe_2 was carried out successfully.

Report

(3 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • Research Products

    (28 results)

All Other

All Publications (28 results)

  • [Publications] D.E.Bliss,W.Walukiewicz,j.W.Ager,E.E.Haller,K.T.Chan and S.Tanigawa: "Annealing studies of low temperature-grown GaAs:Be" J.Appl.Phys.71. 1699-1707 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S.Shikata,S.Fujii,L.Wei and S.Tanigawa: "Effect of annealing method on vacancy-type defects in Si^+-implanted GaAs studied by a slow positron beam" Jpn.J.Appl.Phys.31. 732-736 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] J.L.Lee,L.Wei,S.Tanigawa,T.Nakagawa,K.Ohta and J.Y.Lee: "The effect of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing" IEEE Trans.on Electron Devices. 39. 176-183 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] L.Wei,Y.Tabuki,H.Kondo,S.Tanigawa,R.Nagai and E.Takeda: "Stress induced rearrangement of oxygen atoms in Si investigated by a monoenergetic positron beam" J.Appl.Phys.70. 7543-7548 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M.Saito,A.Oshiyama and S.Tanigawa: "Anisotropic momentum distribution of positron annihilation radiations in semiconductors" Phys.Rev.B. 44. 10601-10609 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] L.Wei,Y.K.Cho,C.Dosho,S.Tanigawa,T.Yodo and K.Yamashita: "Defects in MOVPE-grown ZnSe films on GaAs investigated by monoenergetic positrons" Jpn.J.Appl.Phys.30. 2442-2448 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 谷川 庄一郎(分担): "最新「固体表面/微小領域の解析・評価技術」第3章" リアライズ社, 410 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 谷川 庄一郎(分担): "ビ-ム利用技術の最近の動向" 日本鉄鋼協会, 93 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] D. E. Bliss, W. Walukiewicz, J. E. Ager, E. E. Haller, K. T. Chan and S. Tanigawa: ""Annealing Studies of Low Temperature-grown GaAs : Be"" J. Appl. Phys.71. 1699-1707 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] S. Shikata, S. Fujii, L. Wei and S. Tanigawa: ""Effect of Annealing Method on Vacancy-type Defects in Si^+-implanted GaAs Studied by a Slow Positron Beam"" Jpn. J. Appl. Phys.31. 732-736 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] J. L. Lee, L. Wei, S. Tanigawa, T. Nakagawa, K. Ohta and J. Y. Lee: ""The Effect of Point Defects on the Electrical Activation of Si-implanted GaAs during Rapid Thermal Annealing" IEEE Tans. on Electron Devises. 39. 176-183 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa, R. Nagai and E. Takeda: ""Stress Induced Rearrangement of Oxygen Atoms in Si Investigated by a Monoenergetic Positron Beam" J. Appl. Phys.70. 7543-7548 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M. Saito, A. Oshiyama and S. Tanigawa: ""Anisotropic Momentum Distribution of Positron Annihilation Radiations in Semiconductors" Phys. Rev. B. 44. 10601-10609 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] L. Wei, Y. K. Cho, C. Dosho, S. Tanigawa, T. Yodo and K. Yamashita: ""Defects in MOVPE-grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons" Jpn. J. Appl. Phys.30. 2442-2448 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] D.E.Bliss,W.Walukiewicz,J.W.Ager,E.E.Haller,K.T.Chan and S.Tanigawa: "Annealing studies of low temperatureーgrown GaAs;Be" J.Appl.Phys.71. 1699-1707 (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] S.Shikata,S.Fujii,L.Wei and S.Tanigawa: "Effect of annealing method on vancancyーtype defects in Si^+ーimplanted GaAs studied by a slow positron beam" Jpn.J.Appl.Phys.31. 732-736 (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] J.L.Lee,L.Wei,S.Tanigawa,T.Nakagawa,K.Ohta and S.Tanigawa: "The effect of point defects on the electrical activation of Si‐implanted GaAs during rapid thermal annealing" IEEE Trans.on Electron Devices. 39. 176-183 (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] L.Wei,Y.Tabuki,H.Kondo,S.Tanigawa,R.Nagai and E.Takeda: "Stress induced rearrangement of oxygen atoms in Si investigated by a monoenergetic positron beam" J.Appl.Phys.70. 7543-7548 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] M.Saito,A.Oshiyama and S.Tanigawa: "Anisotropic momentum distribution of positron annihilation radiations in semiconductors" Phys.Rev.B. 44. 10601-10609 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] "Defects in MOVPEーgrown ZnSe films on GaAs investigated by monoenergetic positrons" Jpn.J.Appl.Phys.30. 2442-2448 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] 谷川 庄一郎(分担): "最新「固体表面/微小領域の解析・評価技術」第3章" リアライズ社, 410 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] 谷川 庄一郎: "低速陽電子ファクトリ-" 数理科学. 320. 68-74 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 河野 孝央,鈴木 良一,水原 洋治,栗原 俊一,渡辺 一裕,久保田 剛,谷川 庄一郎: "256個のBi_4Ge_3O_<12>(BGO)シンチレ-ション検出器を用いた陽電子消滅2次元角相関測定装置" Radioisotopes. 39. 1-12 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] T.Kurihara,S.Tanigawa: "The anomalous temperature dependeuce of positron annihilation in dilute AlーZn alloy near the melting point" phys.stat.sol.(a). 117. K9-K13 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 上殿 明良,谷川 庄一郎: "表面・界面プロ-ブとしての低速陽電子" 表面技術. 41. 355-363 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] S.Tanigawa: "Present and future e^+ beams in Japan" Helvetica Physica Acta. 63. 385-391 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] A.Uedono,S.Tanigawa: "Defects induced by the wafer processing and the thermal treatment in InP probed with monoenergetic positrons" Jpn.J.Appl,Phys.29. 909-914 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 谷川 庄一郎(共著): "最新「固体表面/微小領域の解析・評価技術」" リアライズ, (1991)

    • Related Report
      1990 Annual Research Report

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Published: 1990-04-01   Modified: 2016-04-21  

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