| Project/Area Number |
02452251
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
溶接工学
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| Research Institution | Kyushu Institute of Technology |
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Principal Investigator |
KANETO Keiichi Kyushu Institute of Technology, Computer science and Systems Engineering, Professor, 情報工学部, 教授 (70124766)
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| Co-Investigator(Kenkyū-buntansha) |
TAKASHIMA Wataru Kyushu Institute of Technology, Computer Science and Systems Engineering, Assist, 情報工学部, 助手 (10226772)
ASANO Tanemasa Kyushu Institute of Technology, Computer Science and Systems Engineering, Associ, 情報工学部, 助教授 (50126306)
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| Project Period (FY) |
1990 – 1991
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| Project Status |
Completed (Fiscal Year 1991)
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| Budget Amount *help |
¥5,700,000 (Direct Cost: ¥5,700,000)
Fiscal Year 1991: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1990: ¥3,700,000 (Direct Cost: ¥3,700,000)
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| Keywords | Conducting Polymer / Solid State Electrolyte / Memory Device / Electrochemical Oxidation / Transistor / Polythiophene |
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| Research Abstract |
Conducting polymers of quasi-one-dimensional semiconductor can be reproducibly doped and undoped with oxidizing and reducing agents between polymer chains by electrochemical method and turns into metallic conductor from semiconductor. Using this novel property, the electroplasticity memory devices were fabricated, and the responses by input signals and memory characteristics were investigated.
Two types of memory devices with 3-electrode and 2-electrode were fabricated the memory channel was composed with conducting polymer of poly(3-methylthiophene). Microelectrochemical cell was constructed similar to the conventional field effect transistor with solid polymer electrolyte of polyethylene oxide and propylene oxide co-polymer with LiCl04. The poly(3-methylthiophene was synthesized electrochemically between source and drain, on which the solid polymer electrolyte was pasted. For the case of 3-electrode device, the input electrode of Li was pressed on the solid electrolyte.
The responses of the channel conductivity by the application of the input signals such as potential sweep and pulse voltage were measured. From the experimental results, the devices operated by the both signals as expected and indicated the memory function with learning effect. It is also found that the channel conductivity depended on the magnitude of pulse voltage and frequency of pulses. The characteristics of these devices can not be achieved by the inorganic semiconductors, are resembled to the synapse plasiticity of neural networks. The improvement of response time, memory characteristics and the construction of a signal process system are the subject of further investigations.
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