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Crystal Growth of High-Quality SiC by Step-Controlled Epitaxy and its Application for Power Devices

Research Project

Project/Area Number 02555059
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionKyoto University

Principal Investigator

MATSUNAMI Hiroyuki  Kyoto Univ., Dept. Eng., Professor, 工学部, 教授 (50026035)

Co-Investigator(Kenkyū-buntansha) KIMOTO Tsunenobu  Kyoto Univ., Dept. Eng., Research Associate, 工学部, 助手 (80225078)
YOSHIMOTO Masahiro  Kyoto Univ., Dept. Eng., Research Associate, 工学部, 助手 (20210776)
FUYUKI Takashi  Kyoto Univ., Dept. Eng., Associate Professor, 工学部, 助教授 (10165459)
Project Period (FY) 1990 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥17,700,000 (Direct Cost: ¥17,700,000)
Fiscal Year 1991: ¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 1990: ¥13,800,000 (Direct Cost: ¥13,800,000)
Keywordssilicon carbide / power device / breakdown field / low-temperature growth / polytype control / step-flow growth / 価電子制御 / 低温結晶成長
Research Abstract

Vapor phase epitaxial growth of SiC on off-oriented 6H-SiC substrates (step-controlled epitaxy) has been carried out at low temperatures of 1000-1500゚C. Homoepitaxial growth of 6H-SiC is achieved at a temperature as low as 1200゚C governed by step-flow growth on off-oriented (0001) faces and at 1100゚C on (0114)C faces. The growth rate is limited by the supply of Si species. In step-controlled epitaxy, crystal growth is controlled by the diffusion of reactants in a stagnant layer. On the basis of these results, the growth mechanism is discussed in detail.
Doping of N and Al during growth have been tried, and the electrical properties have been examined. Schottky barrier diodes fabricated with undoped and N-doped grown layers show excellent characteristics. High breakdown fields of 1-4x10^6V/cm are obtained.

Report

(3 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] Hiroyuki Matsunami: "Breakthrough in Semiconducting SiC towards Solid State Devices" 1991 Int.Conf.on Solid State Devices and Materials. 138-140 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Takashi Fuyuki: "Atomic Level Control in Crystal Growth Utilizing Reconstruction of the Surface Superstructure" Mat.Res.Soc.Symp.Proc.221. 207-211 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Woo Sik Yoo: "Polytype-Controlled Single Crystal Growth of Silicon Carbide Using 3C→6H Solid-State Phase Transformation" J.Appl.Phys.70. 7124-7131 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Tsunenobu Kimoto: "Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy" Jpn.J.Appl.Phys.30. L289-L291 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Hiroyuki matsunami: "Recent Progress in Epitaxial Growth of SiC" 4th Int.Conf.on Amorphous and Crystalline Silicon Carbide and Other IV-IV Materials. (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Tsunenobu Kimoto: "Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method" 4th Int.Conf.on Amorphous and Crystalline Silicon Carbide and Other IV-IV Materials. (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Hiroyuki Matsunami: "Breakthrough in Semiconducting SiC towards Solid State Devices" 1991 Int. Conf. on Solid State Devices and Materials. 138-140 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Takashi Fuyuki: "Atomic Level Control in Crystal Growth Utilizing Reconstruction of the Surface Superstructure" Mat. Res. Soc. Symp. Proc.22. 207-211 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Woo Sik Yoo: "Polytype-Controlled Single Crystal Growth of Silicon Carbide Using 3C->6H Solid-State Phase Transformation" J. Appl. Phys.70. 7124-7131 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Tsunenobu Kimoto: "Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy" Jpn. J. Appl. Phys.30. L289-L291 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Hiroyuki Matsunami: "Recent Progress in Epitaxial Growth of SiC" Proc. 4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV-IV Materials. I. 1 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Tsunenobu Kimoto: "Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method" Proc. 4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV-IV Materials. I. 3 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Hiroyuki Matsunami: "Breakthrough in Semiconducting SiC towards Solid State Devices" 1991 Int.Conf.on Solid State Devices and Materials. 138-140 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] Takashi Fuyuki: "Atomic Level Control in Crystal Growth Utilizing Reconstruction of the Surface Superstructure" Mat.Res.Soc.Symp.Proc.221. 207-211 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] Woo Sik Yoo: "Polytype-Controlled Single Crystal Growth of Silicon Carbide Using 3C→6H Solid-State Phase Transformation" J.Appl.Phys.70. 7124-7131 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] Tsunenobu Kimoto: "Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy" Jpn.J.Appl.Phys.30. L289-L291 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] Hiroyuki Matsunami: "Recent Progress in Epitaxial Growth of SiC" 4th Int.Conf.on Amorphous and Crystalline Silicon Carbide and Other IV-IV Materials. (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] Tsunenobu Kimoto: "Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method" 4th Int.Conf.on Amorphous and Crystalline Silicon Carbide and Other IV-IV Materials. (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Matsunami: "StepーControlled Epitaxial Growth of SiC" Materials Research Society Symposium Proceedings. 162. 397-407 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] T.Ueda: "Crystal Growth of SiC by StepーControlled Epitaxy" J.Cryst.Growth. 104. 695-700 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] T.Kimoto: "Photoluminescence of Ti Doped 6HーSiC Grown by Vapor Phase Epitaxy" Jpn.J.Appl.Phys.30. L289-L291 (1991)

    • Related Report
      1990 Annual Research Report
  • [Publications] 松波 弘之: "3CーSiC基板上のSiCバルク成長とステップ制御エピタキシ-への応用" 電子情報通信学会 電子部品・材料研究会. CPM90ー64. 29-34 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 松波 弘之: "ステップ制御エピタキシ-における6HーSiCの価電子制御と青色LEDの製作" 電子情報通信学会 電子デバイス研究会. ED90ー93. 1-6 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] 松波 弘之: "ステップ制御エピタキシ-によるSiCの単結晶成長" 応用物理. 59. 1051-1056 (1990)

    • Related Report
      1990 Annual Research Report

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Published: 1990-04-01   Modified: 2016-04-21  

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