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To develop measurement technique of temporal width for femtosecond laser pulses in the short wavelength region by means of luminescence correlation method

Research Project

Project/Area Number 02650036
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 物理計測・光学
Research InstitutionOkayama University of Science

Principal Investigator

SAITO Hiroshi  Okayama University of Science Department of Applied Physics Professor, 理学部, 教授 (20013526)

Co-Investigator(Kenkyū-buntansha) OHISHI Masakazu  Okayama University of Science Department of Applied Physics Professor, 理学部, 教授 (40068911)
Project Period (FY) 1990 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1991: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1990: ¥1,600,000 (Direct Cost: ¥1,600,000)
KeywordsFemtosecond Light Pulses / Mode-Locked Laser / Luminescence Correlation Method / フェムト秒光パルス
Research Abstract

1 We tasted a dye laser synchronously pumped by the third harmonic pulses (output power of 5OO-6OOmW) of a mode-locked cw ND-YAG laser (Antares 76s, output power of 25W). By using Stilbene 3 dye, we obtained pulses with 100- I 5OmW output power in the wavelength range from 4 10 to 460 nm. We also tried to shorten the pulses by insertingsaturableabsorberinthedyelaser. Temporalwidthofthepulsesarefoundtobel-1.4pswhichare measured by 2nd harmonic-generafion autocorrelation method using high fidelity, rapid-scanning Kfichelson interferometer equipped with BBO crystal. By using NK557 (Nihon Kanko Shildso) or Coumarin 7, pulses with the width less than lps with the output power reduced to about 1/3 are obtained. It was found, however, that not only the long-time stability is worse but also pulse-to-pulse intensity fluctuation as well as spatial fluctuafion of the pulses is not negligibly small.
2 We constructed high fidelity, rapid-scanning-Nfichelson interferometer. This interferometer has enough precision that enable us to measure interference pattem between the two laser beams, which is confirmed by the test using femtosecond laser pulses from Ar ion laser pumped Rhodamine 6G dye laser.
3 We also tried to measure autocorrelation traces by luminescence correlation method. Swuples used are molecular beam epitaxially-grown ZnSe and bulk CdS crystals. In each samples, we confirmed that the luminescence autocorrelation traces show the similar shape as 2nd harmonic generation autocorrelation traces. However, the results are not so accurate to compare between those two and to discuss in detail, because of the inferior stability of the laser pulses. Wecansaythattheluminescencecoffelationmethod, atleast, givesthemeasureofthepulsewidth, andthus can be applied to the measurements in the short-wavelength range where nonlinear crystals such as BBO can not be used.

Report

(3 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] M.Ohishi,H.Saito,J.Fujiwara and K.Ohmori: "Effect of residual strain on the splitting of excitonic luminesence lines in epitaxially grown ZnSe/GaAs" Japan.J.Appl.Phys.29. 1504-1505 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M.Ohishi,H.Saito,H.Torihara K.Fujisaki and K.Ohmori: "Ultraviolet irradiation effect on the MBE growth of AnSe/GaAs observed by RHEED" J.Crystal Growth. 111. 792-796 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M.Ohishi,H.Saito,Y.Fujisaki H.Torihara and Iminjan Alet: "Low temperature growth of AnSe/GaAs using post-heated molecular beams" Japan.J.Appl.Phys.30. L1042-L1044 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M.Ohishi,H.Saito,H.Torihara,Y.Fujisaki and K.Ohmori: "Molecular beam eptaxially grown ZnSe(001)surface studied by the in-situ observation of RHEED intensity" Japan.J.Appl.Phys.30. 1647-1652 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M.Ohishi,H.Saito,M.Yoneta and Y.Fujisaki: "Low temperature growth of AnSe/GaAs using hot molecular beams" J.Crystal Growth.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 斉藤 博,渡部 明: "ハイブリッドモ-ド同期、同期励起色素レ-ザ-による青色領域サブピコ秒パルスの発生" 岡山理科大学紀要.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Hiroshi Saito and Akira Watanabe: "Generation of sub-picosecond light pulses in the blue region from a hybrid mode-locked dye laser synchrnouly pumped by the third hamonics of a Nd-YAG laser" The bulletin of Okayama University of Science.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M. Ohishi, H. Saito, M. Yoneta and Y. Fujisaki: "Low temperature growth of ZnSe/GaAs using hot molecular beams" J. Crystal Growth.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M. Ohishi, H. Saito, H. Torihara, Y. Fujisaki and K. Ohmori: "Molecular beam epitaxially grown ZnSe (001) surface studied by the in-situ observation of RHEED intensity" Japan. J. Appl. Phys.30. 1647-1652 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M. Ohishi, H. Saito, Y. Fujisaki, H. Torihara and I. Alet: "Low temperature growth of ZnSe/GaAs using post-heated molecular beams" Japan. J. Appl. Phys.30. L1042-L1044 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M. Ohishi, H. Saito, H. Torihara, K. Fujisaki and K. Ohmori: "Ultraviolet irradiation effect on the MBE growth of ZnSe/GaAs observed by RHEED" J. Crystal Growth. 111. 792-796 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M. Ohishi, H. Saito, J. Fujiwara and K. Ohmori: "Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs" Japan. J. Appl. Phys.29. 1504-1505 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] H. Saito, M. Ohishi, A. Watanabe and K. Ohmori: "Strain-induced splitting of free exciton band in epitaxially grown ZnSe on GaAs" J. Cryst. Growth. 101. 727-730 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] M.Ohishi,H.Saito,H.Torihara,K.Fujisaki and K.Ohmori: "Ultraviolet irradiation effect on the MBE growth of ZnSe/GaAs observed by RHEED" J.Crystal Growth. 111. 792-796 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] M.Ohishi,H.Saito,Y.Fujisaki,H.Torihara and Iminjan Alet: "Low temperature growth of ZnSe/GaAs using post-heated molecular beams" Japan.J.Appl.Phys.30. L1042-L1044 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] M.Ohishi,H.Saito,H.Torihara,Y.Fujisaki and K.Ohmori: "Molecular beam epitaxially grown ZnSe(001)surface studied by the in-situ observation of RHEED intensity" Japan.J.Appl.Phys.30. 1647-1652 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] M.Ohishi,H.Saito,M.Toneta and Y.Fujisaki: "Low temperature growth of ZnSe/GaAs using hot molecular beams" J.Crystal Growth.

    • Related Report
      1991 Annual Research Report
  • [Publications] 斉藤 博,渡部 明: "ハイブリッドモ-ド同期、同期励起色素レ-ザ力による青色領域サブピコ秒パルスの発生" 岡山理科大学紀要.

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Saito,M.Ohishi,A.Watanabe,K.Ohomiri: "Strainーinduced splitting of free exciton band in epitaxially grown ZnSe/GaAs" J.Crystal Growth. 101. 727-730 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Saito,M.Ohishi,J.Fujiwara,K.Ohomiri: "Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs" Japanese J.Applied Physics. 29. 1504-1505 (1990)

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Saito,M.Ohishi,H.Torihara,Y.Fujisaki,K.Ohomiri: "Ultraviolet irradiation effect on the MBE growth of ZnSe/GaAs observed by RHEED" J.Crystal Growth.

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Saito,M.Ohishi,H.Torihara,Y.Fujisaki,K.Ohomiri: "MBEーgrown ZnSe surface studied by the in situ observation of the RHEED intensity" Japanese J.Applied Physics.

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Saito,M.Ohishi,H.Torihara,Y.Fujisaki,Iminjan Ablet: "Low temperature MBE growth of ZnSe/GaAs by using postーheated molecular beams" Japanese J.Applied Physics.

    • Related Report
      1990 Annual Research Report
  • [Publications] H.Saito,M.Ohishi,H.Torihara,Y.Fujisaki: "Crystallographic qualities of ZnSe layers grown by MBE on GaAs(001) pretreated by(NH_4)_2S_x" Japanese J.Applied Physics.

    • Related Report
      1990 Annual Research Report

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Published: 1990-04-01   Modified: 2016-04-21  

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