| Project/Area Number |
02650059
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
機械材料工学
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| Research Institution | Himeji Institute of Technology |
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Principal Investigator |
KOTERAZAWA Keiji Himeji Institute of Technology, Faculty of Engineering, Prof., 工学部, 教授 (50047594)
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| Co-Investigator(Kenkyū-buntansha) |
INOUE Shozo Himeji Institute of Technology, Faculty of Engineering, Assi. Prof., 工学部, 助手 (50193587)
UCHIDA Hitoshi Himeji Institute of Technology, Faculty of Engineering, Asso. Prof., 工学部, 助教授 (30047633)
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| Project Period (FY) |
1990 – 1991
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| Project Status |
Completed (Fiscal Year 1991)
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| Budget Amount *help |
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 1991: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1990: ¥1,300,000 (Direct Cost: ¥1,300,000)
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| Keywords | Nitride Films / rf Reactive Sputtering / Oxidation Behavior / Titanium Nitride / Alminum Nitride / グロ-放電発光分光分析 |
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| Research Abstract |
AIN and TiN single layer files and AIN/TIN double layered files were prepared by rf reactive sputtering. Ar + N_2 mixed gas used as a sputtering gas. Substrates were slide glasses, (001) Si wafers and (001) NaCl single crystals. Crystallographic structure and composition of these files were studied by X-ray diffractometry, transmission electron microscopy and Auger electron spectroscopy. The oxidation behavior of layered files in air environment at high temperature was also investigated.
The results obtained are listed as follows.
1. AIN and/or TiN films with stoichiometric composition could be deposited at above a threshold nytrogen partial pressure-to-total pressure ratio.
0 2. AlN and TiN films grow with prefered orientation, which are (00・1) for AIN files and (001) for TiN films, respectively.
3. N_2^+ species in glow discharge plasma during sputtering might have an important role for the deposition of nitride films.
4. AIN films deposited on TiN files also preferred (00・1) orientation.
5. Neither compound formation nor diffused layer could be detected at a interface of as-deposited AIN/TiN double layered films. A distinct AIN/TIN interface can be forged by rf reactive sputtering.
6. TiN films were oxidized rapidly with annealing at above 500ﾟC. On the other hand, AIN/TiN double layered films were scarcely oxidized with annealing at 700ﾟC. It is concluded that the AIN layer on TiN file prevents oxidation.
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