• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Microscopic Ellipsometric Analysis of Thin Films Formed by Chemical Vapor Deposition

Research Project

Project/Area Number 02650505
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 金属材料(含表面処理・腐食防食)
Research InstitutionTohoku University

Principal Investigator

SUGIMOTO Katsuhisa  Tohoku University, Engineering, Professor, 工学部, 教授 (80005397)

Co-Investigator(Kenkyū-buntansha) AKAO Noboru  Tohoku University, Engineering, Research Assistant, 工学部, 助手 (80222503)
Project Period (FY) 1990 – 1991
Project Status Completed (Fiscal Year 1991)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1991: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1990: ¥1,500,000 (Direct Cost: ¥1,500,000)
KeywordsEllipsometry / Microscopic ellipsometer / Film thickness / Optical constant / PECVD / 複素屈析率 / BN薄膜
Research Abstract

A microscopic ellipsometer which equips two groups of lenses behind the computer-aided rotating analyzer for magnifying the reflection image of the specimen, in addition to a polarizer-sample-analyzer configuration. This combination of lenses can provide a maximum magnification of ca. 1000 times and makes it possible to determine the thickness and optical constant of a thin surface film on an area of ca. 3um in diameter. Using this ellipsometer the spatial distributions of film thickness and optical constant have been measured for the films of BN, TiN and SiO_2 formed on polycrystalline Pt substrate by plasma-enhanced chemical vapor deposition(PECVD). The corresponding distributions of plasma parameters, the electron density and electron temperature, were measured using a Langmuir probe technique. It was found that the film thickness depended remarkably on the grain orientation of the substrate, while the optical constant was almost independent of the grain orientation. The distribution of film thickness within each grain was less significant. The electron density and electron temperature of plasma were, almost constant over the area of the substrate, 25mmXl5mm. It is-therefore thought that the spatial distributions of film thickness arise from differences in the catalytic activity of individual grains of the substrate.

Report

(3 results)
  • 1991 Annual Research Report   Final Research Report Summary
  • 1990 Annual Research Report
  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] 豊田 正道: "MOCVDーTiO_2薄膜の成長過程のエリプソメトリ-によるInーSitu解析" 日本金属学会誌. 54. 925-932 (1990)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 安 春鎬: "MOCVDーTa_2O_5薄膜の成長過程のエリプソメトリ-によるInーSitu解析" 日本金属学会誌. 55. 58-66 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 遠藤 修: "TEOSーO_3系CVDによるSiO_2薄膜の形成とその耐食性の評価" 日本金属学会誌. 55. 957-961 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 呉 徹: "ATIーO_2系低圧CVDによりAl_2O_3薄膜の形成とその耐食性の評価" 日本金属学会誌. 56. 184-190 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] 天野 浩平: "ZTIーO_2系低圧CVDによるZrO_2薄膜の形成とその耐食性の評価" 日本金属学会誌. 56. 204-209 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Masamichi Toyoda: "In-Situ Ellipsometric Analysis of Formation Process of TiO_2 Thin Films in MOCVD" J. Japan Inst. Metals. 54. 925-932 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Choonho An: "In-Situ Ellipsometric Analysis of Formation Process of Ta_2O_5 Thin Films in MOCVD" J. Japan Inst. Metals. 55. 58-66 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Osamu Endo: "Formation of SiO_2 Films by CVD Using TEOS-O_3 system and Evaluation of Corrosion Resistance of the Films" J. Japan Inst. Metals. 55. 957-961 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Tetsu Go: "Formation of Al_2O_3 Films by Low Pressure CVD Using ATI-O_2 system and Evaluation of Corrosion Resistance of the Films" J. Japan Inst. Metals. 56. 184-190 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary
  • [Publications] Kohei Amano: "Formation of ZrO_2 Films by Low Pressure CVD Using ZTI-O_2 system and Evaluation of Corrosion Resistance of the Films" J. Japan Inst. Metals. 56. 204-209 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1991 Final Research Report Summary

URL: 

Published: 1990-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi