Control of Electrical Conduction Properties of Chalcogenide Glasses by Ion Implantation
| Project/Area Number |
02650554
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
無機工業化学・無機材料工学
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| Research Institution | Nagaoka University of Technology |
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Principal Investigator |
WATANABE Yuichi Nagaoka University of Technology, Department of Electrical Engineering, Research Associate, 工学部, 助手 (70220936)
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| Co-Investigator(Kenkyū-buntansha) |
TAKATA Masasuke Nagaoka University of Technology, Department of Electrical Engineering, Professo, 工学部, 教授 (20107551)
OKAMOTO Shoichi Nagaoka Technical College, President, 学校長 (60087418)
NAKAJIMA Kensuke Tohoku University, Research Institute of Electrical Communication, Research Asso, 電気通信研究所, 助手 (70198084)
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| Project Period (FY) |
1990 – 1991
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| Project Status |
Completed (Fiscal Year 1991)
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| Budget Amount *help |
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 1991: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1990: ¥900,000 (Direct Cost: ¥900,000)
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| Keywords | Chalcogenide Glass / Ion Implantation / Photo-doping / Electronic Property |
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| Research Abstract |
In this project, effect of ion implantation upon the electronic properties of chalcogenide glasses was examined in terms of changes in the electronic structure before after the implantation. Obtained results were summarized as follows.
1. Incorporation of N ion into In-Se amorphous semiconductor was found to be impossible by the implantation of physical process. One of the reason was given as which the any constituent element in the system could not form the stable nitride.
2. Considerable amount of Ag ion could be incorporated into chalcogenide glass by the photo-doping process. The incorporation resulted in the large changes in refractive index of the material.
3. It was suggested that the sensitive control of electronic properties of glasses was possible by means of the photo-doping.
Since the ion implantation can be regarded as one of the method for impurity doping under non-equilibrated condition at low temperature, and have an ability for control the spatial distribution of structure and composition of the material, it seems to be important to apply the method not only to chalcogenide glasses but also to other various inorganic materials, in order to design the material having unique function.
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Report
(3 results)
Research Products
(14 results)
