| Project/Area Number |
03402022
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| Research Category |
Grant-in-Aid for General Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | University of Tokyo |
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Principal Investigator |
IKOMA Toshiaki Univ. Tokyo, Inst. Industrial Scicence, Prof, 生産技術研究所, 教授 (80013118)
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| Co-Investigator(Kenkyū-buntansha) |
SAITO Toshio Univ. Tokyo, Inst. Industrial Res. Associate, 生産技術研究所, 助手 (90170513)
HIRAKAWA Kazuhiko Univ. Tokyo, Inst. Industrial Associate Prof, 生産技術研究所, 助教授 (10183097)
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| Project Period (FY) |
1991 – 1993
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| Project Status |
Completed (Fiscal Year 1993)
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| Budget Amount *help |
¥22,000,000 (Direct Cost: ¥22,000,000)
Fiscal Year 1993: ¥6,600,000 (Direct Cost: ¥6,600,000)
Fiscal Year 1992: ¥7,000,000 (Direct Cost: ¥7,000,000)
Fiscal Year 1991: ¥8,400,000 (Direct Cost: ¥8,400,000)
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| Keywords | heterojunction / band offsets / interface dipole / x-ray photoemission spectroscopy / tight-binding calculations / band bending / delta-doping / バンド構造の制御 / 光電子分光法 / 強結合法 / 半導体ヘテロ構造 / 界面ダイポ-ル |
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| Research Abstract |
Roles of Si layr at GaAs/AlAs structures have been studied by x-ray photoemission spectroscopy(XPS) and self-consistent tight-binding calculations. It is found that one has to precisely control the Si-occupying sites to from an artificial interface dipole to control heterojunction band offsets. However, under the present experimental condition, inserted Siatoms distribute over a few atomic layrs and mainly act as donor impurities, which introduce only a band bending.
Alternatively, we proposed to combine two closely spaced delta-doping layrs to vary the band offsets. Hall measurements show that a growth temperature varies a conduction type of(311)A-oriented GaAs delta-doped with only Si as a dopant. The effective band offset is varied by -0.5eV at a GaAs/AlAs heterostructure with p-and n-type Si doping sheets with a narrow spacing of -5 nm. This experiment shows that by controlling atomic sites of inserted Si, we can introduce an artificial interface dipole to realize a control of heterojunction band offsets.
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