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A Study on Multi-quantum Barriers Utilizing Electron-wave Interference in Semiconductors

Research Project

Project/Area Number 03402037
Research Category

Grant-in-Aid for General Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field 電子機器工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

IGA Kenichi  Tokyo Institute of Technology, Precision and Intelligence Laboratory,Professor, 精密工学研究所, 教授 (10016785)

Co-Investigator(Kenkyū-buntansha) BABA Toshihiko  Tokyo Institute of Technology, Research Associate, 精密工学研究所, 助手 (50202271)
SAKAGUCHI Takahiro  Tokyo Institute of Technology, Precision and Intelligence Laboratory, Research A, 精密工学研究所, 助手 (70215622)
KOYAMA Fumio  Tokyo Institute of Technology,Precision and Intelligence Laboratory,Associate Pr, 精密工学研究所, 助教授 (30178397)
Project Period (FY) 1991 – 1992
Project Status Completed (Fiscal Year 1992)
Budget Amount *help
¥17,300,000 (Direct Cost: ¥17,300,000)
Fiscal Year 1992: ¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 1991: ¥14,000,000 (Direct Cost: ¥14,000,000)
KeywordsMulti Quantum Barrier / Electronic Wave / Super Lattice / Semiconductor Layer / Semiconductor Laser / Hetero Barrier / 半導体レ-ザ
Research Abstract

we use the double heterostructure (HD) in most of current semiconductor lasers for the purpose of confinement of both optical field and carriers as well. In order to prevent electrons from leaking over the hetero-barrier of a p-type cladding, it is known that more than 300 meV of built-in potential difference is usually required. But in some cases such as high power and high temperature operations, much higher barrier height is preferable. However, enough barrier height is not sometimes available due to the material limitation, e.g., in short wavelength GaAlInP based red-orange lasers and II-VI based blue-green ZnCdSSe or blue ZnMgSSe systems.
We have to pay attention not only to the active engine of semiconductor lasers, but also to the cladding layer to achieve high performance devices. One of the ways to increase the effective barrier height is to dope high to p-cladding, and another is to use the quantum effect, i.e., multi-quantum barrier (MQB). The MQB is a semiconductor super-lattice which can reflect electrons by interference.
The CQB is a semiconductor super-lattice which can reflect electrons by interference. In this paper we first introduce its principle and design concept and then review the recent progress of MQB-loaded semiconductor lasers and tunneling diodes. It has been pointed out that the operating temperature of visible GaAlInP/GaInP lasers, to red, can be raised up by 20 K. Also, some design and experimental studies for long wavelength lasers have been made. One of interesting features is a possibility of preventing the auger hot electron from leaking through the cladding.

Report

(3 results)
  • 1992 Annual Research Report   Final Research Report Summary
  • 1991 Annual Research Report
  • Research Products

    (26 results)

All Other

All Publications (26 results)

  • [Publications] K.Iga: "Multiquantum barrier-its design and application to semiconductor lasers" Proc.Conf.Laser & Electro-Optics. CMA1 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] T.Takagi,F.Koyama,K.Iga: "Quantum reflection and tunneling in multi-quantum barrier" Dig.Int.Quantum Electron Comf.MOE3 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] T.Takagi,K.Iga: "Temperature dependence of GaAs/AlGaAs multi-quantum burrier lasers" IEEE Photon.Techrol.Lett.4. 1322-1324 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] M.Irikawa,Y.Sasaki,M.Iwase and K.Iga: "Strained-layer multi-quantum barrier for reducing hot electron leakage in long-wavelength semiconductor lasers" Jpn.J.Appl.Phys.31. L1351-L1354 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Y.Inaba,T.Uchida,N.Yokouchi,T.Miyamoto,F.Koyama,K.Iga: "GaInAsP/InP multi-quantum barrier(MQB)grown by chemical beam epitaxy" Jpn.J.Appl.Phys.32. 760-761 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] T.Uchida,T.K.Uchida,N.Yokouchi,T.Miyamoto,F.Koyama,K.Iga: "Photoluminescence characterization of GaxIn_<1-X>As(0≦x≦0.32)strained quantum wells grown on InP by chemical beam epitaxy" J.Crystal Growth. 120. 357-361 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K Iga: "Multiquantum barrier-its design and application to semiconductor lasers" Proc.Conf.Laser and Electro-Optics. CMA1 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] T.Takagi: "F.Koyama and K.Iga,Quantum reflection and tunneling in multi-quantum barrier" Dig.Int.Quantum Electron.Conf. MOE3 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] T.Takagi and K.Iga: "Temperature dependence of GaAs/AlGaAs multi-quantum barrier lasers" IEEE Photon Technol.Lett. 4. 1322 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] M.Irikawa,Y.Sasaki,M.Iwase and K.Iga: "Strained-layer multi-quantum barrier for reducing hot electron leakage in long-wavelength semiconductor lasers" Jpn.J.Appl.Phys. 31. L1351 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Y.Inada,T.Uchida,N.Yokouchi,T.Miyamoto,F.Koyama and K.Iga: "GaIn/AsP/InP multi-quantum barrier (MQB) grown by chemical beam epitaxy" Jpn.J.Appl.Phys. 32. 760 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] T.Uchida,T.K.Uchida,N.Yokouchi,T.Miyamoto,F.Koyama and K.Iga: "Photoluminescence characterization of Ga_xIn_<1-x>As (0<x<0.32) strained quantum wells grown on InP by chemical beam epitaxy" J.Crystal Growth. 120. 357 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K.Iga: "Multequantum barrier-its design and application to semiconductor Iasers" Proc.Conf.Laser & Electro-Optics. CMA1 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] T.Tadage,F.Koyama,K.Iga: "Quantum reflection and tunneling in multi-quantum barrier" Dig.Int,Quantum Electrom.Comnf.MOE3 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] T.Takagi,k,Iga: "Temperrature dependence of GaAs/AlGaAs multi-quantum burrier lasers" IEEE.Photon,Technol.Lett.4. 1322-1324 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] M.Irikawa,Y.Sasaki,M.Iwase and K.Iga: "Strained-layer multi-quantum barrier for reducing hot electron leakage in long-wavelength semicomductor lasers" Jpn.J.Appl.Phys.31. L1351-L1354 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Y.Inada,T.Uchida,N.Yokouchi,T.Miyamoto,F,Koyama,K.Iga: "GaInAsP/InP multi-quantum barrier(MQB)grown by chemical beam epitaxy" Jpn.J.Appl.Phys.32. 760-761 (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] T.Ucheda,T.K.Ucheda,N.Yokouchi,T.Miyamoto,F.Koyama,K.Iga: "Photoluminescence characterization of Gax In_<1-x> As(0≦x≦0.32)Strained quantum wells grown on InP by chemical beam epitaxy" J.Crystal Growth. 120. 357-361 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] T.Takagi,F.Koyama,K.Iga: "Modified multiquantum barrier for 600nm range AlGaInP lasers" Electronics Letters. 27. 1081-1082 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Takagi,F.Koyama,K.Iga: "Design and photoluminescence study on a multiquantum barrier" IEEE Journal of Quantum Electronics. 27. 1511-1519 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Takagi,F.Koyama,K.Iga: "Electronーwave reflection by multiーquatum barrier in nーGaAs/GaAs/nーGaAs tunneling diode" Applied Physics Letters. 59. 2877-2879 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] 高木 剛,小山 二三夫,伊賀 健一: "多重量子障壁(MQB)の設計とMQBによる電子波反射の実験的検証" 電子情報通信学会論文誌. J74ーCーI. 1-9 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] T.Uchida,T.K.Uchida,N.Yokouchi,T.Miyamoto,F.Koyama,K.Iga: "Brryllium doping of Ga_<0.47>In_<0.53>As/InP quantum wells by chemical beam epitaxy(CBE)" Japanese Journal of Applied physics. 30. 1224-1226 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] N.Yokouchi,T.K.ucda,T.Uchida,T.Miyamoto,F.Koyama,K.Iga: "Ultraーthin Ga_xIn_<1ーx>As/InP(0SY.Itoreq.xSY.Itoreq.0.47)layers grown by chemical beam epitaxy" Journal of Electronic Materials. 20. 1049-1052 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] K.Iga: "Microoptics in International Trends in Optics(Chapter4)" Academic Press, 19 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] K.Iga: "“Microoptics"in Encyclopedia of Lasers and Optical Technology" Academic Press, 22 (1991)

    • Related Report
      1991 Annual Research Report

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Published: 1991-04-01   Modified: 2016-04-21  

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