| Project/Area Number |
03402038
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| Research Category |
Grant-in-Aid for General Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
計測・制御工学
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| Research Institution | Osaka University |
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Principal Investigator |
HAMAKAWA Yoshihiro Osaka Univ., Faculty of Engineering Science, Professor, 基礎工学部, 教授 (10029407)
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| Co-Investigator(Kenkyū-buntansha) |
HATTORI Kiminori Osaka Univ., Faculty of Engineering Science, Assistant, 基礎工学部, 助手 (80228486)
OKAMOTO Hiroaki Osaka Univ., Faculty of Engineering Science, Assistant Professor, 基礎工学部, 助教授 (90144443)
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| Project Period (FY) |
1991 – 1993
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| Project Status |
Completed (Fiscal Year 1993)
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| Budget Amount *help |
¥30,400,000 (Direct Cost: ¥30,400,000)
Fiscal Year 1993: ¥7,300,000 (Direct Cost: ¥7,300,000)
Fiscal Year 1992: ¥12,800,000 (Direct Cost: ¥12,800,000)
Fiscal Year 1991: ¥10,300,000 (Direct Cost: ¥10,300,000)
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| Keywords | Amorphous semiconductor / OEIC / Light-combining device / PCEL / LED / thin-film EL / Photoconductive device |
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| Research Abstract |
In this research, we firstly succeeded in development of a-SiC visi-ble light LED.Emitting color is varied from red to green, controling emitting layr deposition condition. As for intrinsic EL device, a-C/a-SiC multi layrs structure lead to blue light emission with high luminance of 35cd/m^2. a-C : H layr deposition conditions and thin-film EL device operating parameters were investigated and basic data were measured.
On the other hand, PCEL which consists of ZnS : (Mn or Tb or Sm) thin-file EL device and n-i-n a-SiC photoconductive device was fabricated. We tried an optical writing with a light-pen. a relation between memory-margin and structural parameters were investigated.
Based on these results, we performed investigations toward optoelectronic integrated circuit combining amorphous semiconductor thin-film light emitter with amorphous photosensor. Consequently, two types of image converters which consist of successively deposited EL(Electro Luminescence) layr and PC(Photo Conductive
… More
) layr were developed.
The first device has a SiNx/a-C/a-SiNx intrinsic EL active layrs deposited on ITO-coated glass substrate. n-i-n a-SiC photoconductive layrs are deposited successively on the EL layrs. We investigated this device performance and obtained the technical data.
He-Ne laser(wavelength 633nm) as an input light was converted to blue light output(480nm) at the same area of the input light. This fact suggested that the device is an light up-converter and that infrared-visible image converter is possible if n-i-n a-Si layrs are used as PC layrs.
The other device has p-i-n a-SiC layrs as light emitter. This device is operated in LED mode. We succeeded in fabrication of dc-driven all amorphous image converter.
To add to these investigations, elemental experiments toward a low voltage driven EL device and a high luminance EL device were also performed. As for the former, we used a carrier injection effect at C-Si pn junction. Conquently we succeeded in driving voltage lowering. The latter was concerned with ZnF_2 : Gd ultra-violet emitting EL device and higher luminescence was obtained replacing GdF_3 with GdCl_3. Less
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