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X-RAY STRUCTURES OF HETEROEPITAXIAL GROWTHS

Research Project

Project/Area Number 03402052
Research Category

Grant-in-Aid for General Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field 結晶学
Research InstitutionTOKYO INSTITUTE OF TECHNOLOGY

Principal Investigator

HASHIZUME Hiroo  TOKYO INSTITUTE OF TECHNOLOGY, RESEARCH LABORATORY OF ENGINEERING MATERIALS, PROFESSOR, 工業材料研究所, 教授 (10011123)

Co-Investigator(Kenkyū-buntansha) SAKATA Osami  TOKYO INSTITUTE OF TECHNOLOGY, RESEARCH LABORATORY OF ENGINEERING MATERIALS, RES, 工業材料研究所, 助手 (40215629)
Project Period (FY) 1991 – 1993
Project Status Completed (Fiscal Year 1993)
Budget Amount *help
¥15,500,000 (Direct Cost: ¥15,500,000)
Fiscal Year 1993: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1992: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1991: ¥12,300,000 (Direct Cost: ¥12,300,000)
KeywordsCaSrF2 EPITAXIAL CRYSTAL / SUPERCONDUCTING ULTRATHIN YBCO-ANALOG CRYSTAL / As-DEPOSITED SILICON SURFACE / MICROROUGHNESS / X-RAY DIFFRACTION TECHNIQUE / SYNCHROTRON RADIATION / SURFACE / INTERFACE STRUCTURE / GaAs(111)表面 / CaSrFzエピ結晶 / S処理 / SrTiO3(100)表面 / GdBaCuOエピ結晶 / 界面原子組成・構造 / Si(111):As表面 / 界面F原子面の脱離 / 界面(Ca、Sr)原子の位置 / GaAs(111)Tサイト / 格子定数のミスマッチ / 基板結晶の格子緩和
Research Abstract

1. The structure of epitaxial CaSrF2 crystals grown on GaAs(111) substrates, as well as of their interfaces, have been fully characterized. The results have been published in Surface Science.
2. The structure of growth interface of untrathin EuBaCuo and GdBaCuO epitaxial crystals on SrTiO3(001) surface have been investigated using the X-ray standing-wave technique. The experimental data show that for both EuBaCuO and GdBaCuO neither the CuO layr nor CuO2 layr can be the first grown layr on the TiO2 surface of SrTiO3 Similary, neither the BaO layr nor the rare-earth layr can be the first layr on the SrO surface. The results have been published in Physical Review.
3. Grazing-angle X-ray standing experiments were performed for the first time on Asdeposited Si(111) surface under ultrahigh vacuum conditions. It has been confirmed that arsenic atoms form a bulklike surface replacing the top-layr Si atoms at the threefold positions. Evidences indicating that the As atoms occupy the high-symmetry sites with little disorder was obtained. The research has been published in Physical Review.
4. Preliminary experiments were executed on Si(100) : As surface using the grazing-angle X-ray standing-wave technique.
5. Microroughness of mechanochemically polished silicon surfaces has been evaluated by grazing-angle X-ray reflectivity measurements. It has been demonstrated that the technique can quantitatively determine roughnesses of 2-5 A rms without damaging the sample. An original paper was printed in J.Jpn.Appl.Phys.out of the work.

Report

(4 results)
  • 1993 Annual Research Report   Final Research Report Summary
  • 1992 Annual Research Report
  • 1991 Annual Research Report
  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] Takaki Niwa: "Structure of fluoride/GaAs(111)heteroepitaxial interfaces" Surface Science. 282. 342-356 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] M.Nakanishi: "Structure of the growth interface of Y-Ba-Cu-O analogs on SrTiO_3(001)Substrates" Physical Review B. 48. 10524-10529 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Osami Sakata: "In-plane structure of arsentic deposited on the Si(111)surface studied with the grazing-angle X-ray standing-wave method" Physical Review B. 48. 11408-11411 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Osami Sakata: "X-ray evaluation of microroughness of mechano-chemically polished silicon Surfaces" Jpn.J.Appl.Phys.32. L616-L619 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Niwa, M.Sugiyama, T.Nakahata, O.Sakata and H.Hashizume: "Structure of Fluoride/GaAs(111) heteroepitaxial interfaces" Surface Science. vol.282. 342-356 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] M.Nakanishi, H.Hashizume, T.Terashima, T.Bando, O.Michikami and M.Oshima: "Structure of the Growth Interface of Y-Ba-Cu-O analogs on SrTiO3(001) substrates" Physical Review B. vol.48. 10524-10529 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] O.Sakata, H.Hashizume and H.Kurashina: "In-Plane Structure of Arsenic Deposited on the Si(111) Surface Studied with the Grazing-Angle X-Ray Standing Wave Method" Physical Review B. vol.48. 11408-11411 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] O.Sakata, A.Yu.Nikulin and H.Hashizume: "X-Ray Evaluation of Microroughness of Mechanochemically Polished Silicon Surfaces" Jpn.J.Appl.Phys.vol.32. L616-L619 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Takaki Niwa: "Structure of fluoridel GaAs(111)heteroepitaxial interfaces" Surface Science. 282. 342-356 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Nakanishi: "Structure of the growth interface of r-Ba-Cu-O analysis on SrTiO_3(001)Substrates" Physical Review B. 48. 10524-10529 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Osami Sakata: "In-plane structure of arsentic deposited on the Si(111)Surface Studied with the grazing-angle x-ray standing-wave method" Physical Review B. 48. 11408-11411 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Osami Sakata: "X-ray evaluation of microroughness of mechanochemically polished silicon surfaces" Jpn.J.Applied Physics. 32. L616-L619 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Takaki Niwa: "Struture of fluoride/GaAs(111)heteroepitaxial interfaces" Suiface Science. 282. 342-356 (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.Hashiqume: "CaSrF_2/GaAs and CaF_2/S/GaAs interface structure revealed by X-ray standing waver and crgstal truncatiin rods" Abstract book of AsCA′92. 16P02 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Takaki Nwa: "In-plane structure of CaSrF_2/GaAs(111)Bheteroepitaxial eyterface" Photon Factory Activity Report. 10. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] Takaki Niwa: "Structure of CaF_2/s/GaAs(111)B Heteroepitaxeal interface" Photon Factorg Activity Report. 10. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] M.Nakanishi: "Xray standing-Wave study of ultiathin EuBacuO and GdVaCr epilayers" Photon Factorg Activity Report. 10. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] Osami Sakata: "Developnent of the graqing-incideuce X-ray Standing-wave method" Ohoton Factorg Activity Report. 10. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.Hashizume: "Backreflection xーray standing waves and crystal truncation rods as structure pvobe for epilayerーsubstrate systems" Review of Scientific Instruments. 63. 1142-1145 (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] H.Hashizume: "Determination of inーplane atom positions at CaSrF_2/GaAs(111)B interface by backreflection xーray Standing waves" Photon Factory Activity Report. 9. (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] Takaki Niwa: "Structure of CaSrF_2/GaAs(111)B heteroepitaxial intuface" Photon Faetury Activity Report. 9. (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] O.Sakata: "Obsevation of dynamical xーray standing waves from an epitaxial crystal as thin as 100 A^^°" Photon Factory Activity Report. 9. (1992)

    • Related Report
      1991 Annual Research Report

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Published: 1991-04-01   Modified: 2016-04-21  

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