Amorphization processes of crystalline silicon
| Project/Area Number |
03452074
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | University of Tsukuba |
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Principal Investigator |
TOKUYAMA Takashi Inst.Appl.Phys.,Univ.Tsukuba Professor, 物理工学系, 教授 (40197885)
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| Co-Investigator(Kenkyū-buntansha) |
MOTOOKA Teruaki Inst.Appl.Phys.,Univ.Tsukuba Associate Prof., 物理工学系, 助教授 (50219979)
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| Project Period (FY) |
1991 – 1992
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| Project Status |
Completed (Fiscal Year 1992)
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| Budget Amount *help |
¥6,800,000 (Direct Cost: ¥6,800,000)
Fiscal Year 1992: ¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 1991: ¥4,400,000 (Direct Cost: ¥4,400,000)
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| Keywords | amorphous silicon / ion implantation / Raman scattering / structural relaxation |
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| Research Abstract |
Amorphization processes of crystalline silicon surface by ion implantation, as well as structural relaxation of such amorphized layers, have been investigated by Raman scattering, Ratherford back scattering, positron annihilation, and electron spin resonance. Following conclusions were obtained. 1.Amporphization of crystalline silicon surface can be attributed to reduced atomic force constant due to lattice expansion and accumulation of disorders generated by ion bombardment. 2.Amorphization occurs even by the low dose implantation when implanted ion species and/or implantation condition are selected that accumulation of disorders easily occurs. Low-temperature implantation or formation of complex defects such as phosphorus-defects complex by the phosphorus implantation is an example of such implantation conditions and was experimentally verified. 3.Dose of ions that amorphization occurs depends on the mass of implanted ions. When no interactions occur between implanted ion species and generated disorders, the phenomena can be uniquely explained by normalizing ion dose with the density of generated disorders. 4.Initial amorphous layers relax into more stable structures by thermal annealing. The relaxation process depends on the implanted ion species since defect configuration of initial amorphous layers depends largely on the implantation conditions. 5.Atomic bond angle deviation from the tetrahederal bond angle not only reduces monotonically but shows small increase (reverse process) during annealing. The behavior is explained by introducing the model in which dissociation of complex defects into more simple ones occurs during annealing. This is consistent with the simultaneous increase of dangling bond densities observed.
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Report
(3 results)
Research Products
(19 results)
