| Project/Area Number |
03452078
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
MANNAMI Michihiko Kyoto University, Department of Engineering Science, Professor, 工学部, 教授 (60025294)
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| Co-Investigator(Kenkyū-buntansha) |
FUJII Yosikazu Kyoto University, Department of Engineering Science, Instructor, 工学部, 助手 (80238534)
SUSUKI Yasufumi Kyoto University, Department of Engineering Science, Instructor, 工学部, 助手 (00196784)
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| Project Period (FY) |
1991 – 1992
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| Project Status |
Completed (Fiscal Year 1992)
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| Budget Amount *help |
¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 1992: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1991: ¥3,700,000 (Direct Cost: ¥3,700,000)
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| Keywords | surface blocking / glancing angle scattering of fast ions / charge exchange at surface / surface stopping power / surface defects / surface distortion |
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| Research Abstract |
The blocking effect at surface atomic planes on ions scattered from surface atoms (surface blocking) was investigated in order to study crystal surfaces. Energy losses of the surface blocking ions were observed for 1 MeV He+ ions incident on an atomically clean (001) surface of a SnTe crystal under UHV conditions. The observed energy loss depends on the excite angle relative to the surface plane. A new method was proposed to determine the position dependent stopping power near the surface using surface blocking.
A 90ﾟ sector magnetic spectrometer with inclined boundaries for two-directional focusing was designed for the surface blocking measurement. Using this spectrometer, ions scattered from successive atomic layers could be resolved in the energy spectra of the scattered ions from single crystal surfaces.
Initial stage of epitaxial growth was investigated using glancing angle scattering of MeV light ions on crystal surfaces. It was shown that the surface is distorted during the epitaxial growth of Lead Charcogenides on SnTe(001) due to the formation of misfit dislocations.
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