| Project/Area Number |
03452079
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | KYOTO INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
TACHIBANA Kunihide KYOTO INSTITUTE OF TECHNOLOGY FACULTY OF ENGINEERING AND DESIGN, PROFESSOR, 工芸学部, 教授 (40027925)
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| Co-Investigator(Kenkyū-buntansha) |
SHIRAFUJI Tatsuru KYOTO INSTITUTE OF TECHNOLOGY FACULTY OF ENGINEERING AND DESIGN, RESEARCH ASSOCI, 工芸学部, 助手 (10235757)
播磨 弘 大阪大学, 工学部, 助教授 (00107351)
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| Project Period (FY) |
1991 – 1992
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| Project Status |
Completed (Fiscal Year 1992)
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| Budget Amount *help |
¥6,100,000 (Direct Cost: ¥6,100,000)
Fiscal Year 1992: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1991: ¥4,700,000 (Direct Cost: ¥4,700,000)
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| Keywords | Surface Reaction / Radical Beam / Laser Induced Fluorescence Spectroscopy / Si-Containing Radicals / Atomic Radicals / Hydrogenated Amorphous Silicon / Oxidation Reaction of Silicon / 電子ビーム励起蛍光法 / ラジカルビ-ム / 電子ビ-ム / 蛍光励起分光法 / 水素原子 / メタン系ラジカル / 表面反応 / 付着係数 / 薄膜堆積 |
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| Research Abstract |
In order to understand the kinetics of neutral radical reactions in plasma-and photo-excited material processing, we performed in-situ diagnostics of their reactions on the solid surfaces. As the first step, we built suitable radical sources driven by RF- and MW-discharges. We established also highly-sensitive methods to measure the densities and fluxes of effused radicals from these sources by using laser induced fluorescence spectroscopy (LIF), intra-cavity laser absorption spectroscopy (ICLAS) and so on. Among the successfully detected radicals are Si-containing radicals such as Si, SiH and SiH_2 and atomic radicals such as H, O and N.
Firstly, the reactions of SiH_n(n=0-2) have been studied in the deposition of hydrogenated amorphous silicon (a-Si:H). From a comparison of characterized incident flux of these radicals and the measured optical and electrical proper-ties of the deposited films the reaction mechanisms involved in the deposition have been discussed. The obtained result is also consistent with a computer simulation of our proposed surface reaction model. Secondly, the mechanism of low temperature oxidation of silicon wafer surface has been studied using an oxygen radical source, in which the enhancement of oxidation has been correlated with the flux of oxygen atoms and electronically excited oxygen molecules.
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