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INTERACTION OF FREE-RADICALS WITH SOLID SURFACES AS STUDIED BY FLUORESCENCE-IMAGING METHOD WITH CROSSED BEAMS

Research Project

Project/Area Number 03452079
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionKYOTO INSTITUTE OF TECHNOLOGY

Principal Investigator

TACHIBANA Kunihide  KYOTO INSTITUTE OF TECHNOLOGY FACULTY OF ENGINEERING AND DESIGN, PROFESSOR, 工芸学部, 教授 (40027925)

Co-Investigator(Kenkyū-buntansha) SHIRAFUJI Tatsuru  KYOTO INSTITUTE OF TECHNOLOGY FACULTY OF ENGINEERING AND DESIGN, RESEARCH ASSOCI, 工芸学部, 助手 (10235757)
播磨 弘  大阪大学, 工学部, 助教授 (00107351)
Project Period (FY) 1991 – 1992
Project Status Completed (Fiscal Year 1992)
Budget Amount *help
¥6,100,000 (Direct Cost: ¥6,100,000)
Fiscal Year 1992: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1991: ¥4,700,000 (Direct Cost: ¥4,700,000)
KeywordsSurface Reaction / Radical Beam / Laser Induced Fluorescence Spectroscopy / Si-Containing Radicals / Atomic Radicals / Hydrogenated Amorphous Silicon / Oxidation Reaction of Silicon / 電子ビーム励起蛍光法 / ラジカルビ-ム / 電子ビ-ム / 蛍光励起分光法 / 水素原子 / メタン系ラジカル / 表面反応 / 付着係数 / 薄膜堆積
Research Abstract

In order to understand the kinetics of neutral radical reactions in plasma-and photo-excited material processing, we performed in-situ diagnostics of their reactions on the solid surfaces. As the first step, we built suitable radical sources driven by RF- and MW-discharges. We established also highly-sensitive methods to measure the densities and fluxes of effused radicals from these sources by using laser induced fluorescence spectroscopy (LIF), intra-cavity laser absorption spectroscopy (ICLAS) and so on. Among the successfully detected radicals are Si-containing radicals such as Si, SiH and SiH_2 and atomic radicals such as H, O and N.
Firstly, the reactions of SiH_n(n=0-2) have been studied in the deposition of hydrogenated amorphous silicon (a-Si:H). From a comparison of characterized incident flux of these radicals and the measured optical and electrical proper-ties of the deposited films the reaction mechanisms involved in the deposition have been discussed. The obtained result is also consistent with a computer simulation of our proposed surface reaction model. Secondly, the mechanism of low temperature oxidation of silicon wafer surface has been studied using an oxygen radical source, in which the enhancement of oxidation has been correlated with the flux of oxygen atoms and electronically excited oxygen molecules.

Report

(3 results)
  • 1992 Annual Research Report   Final Research Report Summary
  • 1991 Annual Research Report
  • Research Products

    (20 results)

All Other

All Publications (20 results)

  • [Publications] K.Tachibana: "Measurement of SiH_2 Densities in an RF-Discharge Silane Plasma Used in the Chemical Vapor Deposi-tion of Hydrogenated Amorphous Silicon Film" Japanese Journal of Applied Physics. 31. 2588-2591 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 橘 邦英: "中性原子ラジカル源とレーザー誘起蛍光法による評価" 第3回粒子線の先端的応用技術に関するシンポジウムプロシーディングス(粒子線技術懇談会). 151-158 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K.Tachibana: "In-Situ Laser Diagnostics of Radical Kinetics in the Deposition of Amorphous Silicon Films" Proceedings of the Asia-Pacific Conference on Plasma Chemistry(Nanjing). 162-165 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K.Tachibana: "Detection of H Atoms in RF-Discharge CH_4,SiH_4 and H_2 Plasmas by Two-Photon Absorption Laser Induced Fluorescence(TALIF)Spectroscopy" Proceedings of the 10th Symposium on Plasma Processing(応用物理学会プラズマエレクトロニクス分科室). 48-52 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] W.Chen: "Surface Reaction Modeling in an RF Plasma CVD of a-Si:H" Proceedings of the 10th Symposium on Plasma Processing(応用物理学会プラズマエレクロニクス分科会). 215-218 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K.Tachibana: "In-Situ Investigation of Radical Kinetics in the Deposition of Hydrogenated Amorphous Silicon Films" Materials Science and Engineering B. (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K. Tachibana: "Measurement of SiH_2 Densities in an RF-Discharge Silane Plasma in the Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Film" Jpn. J. Appl. Phys.Vol.31, No.8. 2588-2591 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K. Tachibana: "Neutral Atomic Radical-Sources and Their Evaluation by Laser-Induced Fluorescence Spectroscopy" Proc. 3rd Symposium on Beam Engineering of Advanced Material Syntheses. 151-158 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K. Tachibana: "In-Situ Laser Diagnostics of Radical Kinetics in the Deposition of Amorphous Silicon Films" Proc. Asia-Pacific Conf. on Plasma Chemistry. 162-165 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K. Tachibana: "Detection of H Atoms in RF-Discharge CH_4, SiH_4, and H_2 Plasmas by Two-Photon Absorption Laser-Induced Fluorescence (TALIF) Spectroscopy" Proc. 10th Symposium on Plasma Processing. 49-52 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] W. Chen: "Surface Reaction Modeling in an RF Plasma CVD of a-Si:H" Proc. 10th Symposium on Plasma Processing. 215-218 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K. Tachibana: "In-Situ Investigation of Radical Kinetics in the Deposition of Hydrogenated Amorphous Silicon Films" Mater. Sci. Eng. B. (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] K.Tachibana: "Measurement of SiH_2 Densities in an RF-Discharge Silane Plasma Used in the Chemical Vapor Deposition of Hydrogenated Amorphous Siricon Film" Japanese Jourmal of Applied Physics. 31. 2588-2591 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 橘 邦英: "中性原子ラジカル源とレーザー誘起蛍光法による評価" 第3回粒子線の先端的応用技術に関するシンポジウムプロシーディングス(粒子線技術懇談会). 151-158 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] K.Tachibana: "In-Situ Laser Diagnostics of Radical Kinetics in the Deposition of Amorphous Silicon Films" Proceedings of the Asia-Pacific Conference on Plasma Chemistry (Nanjing). 162-165 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] K.Tachibana: "Detection of H Atoms in RF-Discharge CH_4,SiH_4 and H_2 Plasmas by Two-Photon Absorption Laser Induced Fluorescence (TALIF) Spectroscopy" Proceedings of the 10th Symposium on Plasma Processing (応用物理学会プラズマエレクトロニクス分科会). 49-52 (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] K.Tachibana: "In-Situ lnvestigation of Radical Kinetics in the Deposition of Hydrogenated Amorphous Silicon Films" Materials Science and Engineering B (Elsevier Sequoia). (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] Kunihide Tachibana: "Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RFーDischarge Silane Plasma for the Chemical Vapor Deposition of aーSi:H Films" Japanese Journal of Applied Physics. 30. L1208-L1211 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] Hiroshi Harima: "An IR Study on the Stability of Y(DPM)_3,Ba(DPM)_2 and Cu(DPM)_2 for UV Irradiation" Japanese Journal of Applied Physics. 30. 1946-1955 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] Kunihide Tachibana: "In Situ Investigations of Radical Kinetics in the Deposition of Amorphous Silicon Films" Proceedings of Europian Material Research Society 1922 Spring Meeting. (1992)

    • Related Report
      1991 Annual Research Report

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Published: 1991-04-01   Modified: 2016-04-21  

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