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The Development of a Reflection High Energy Positron Diffraction (RHEPD) Spectrometer

Research Project

Project/Area Number 03555004
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 物理計測・光学
Research InstitutionUniversity of Tsukuba

Principal Investigator

TANIGAWA Shoichiro  University of Tsukuba, Professor, 物質工学系, 教授 (90011080)

Project Period (FY) 1991 – 1992
Project Status Completed (Fiscal Year 1992)
Budget Amount *help
¥16,200,000 (Direct Cost: ¥16,200,000)
Fiscal Year 1992: ¥5,200,000 (Direct Cost: ¥5,200,000)
Fiscal Year 1991: ¥11,000,000 (Direct Cost: ¥11,000,000)
KeywordsRHEPD / RHEED / Surface Analysis / Positron-Solid Interaction
Research Abstract

As a surface analysis technique, a Reflection High Energy Electron Diffraction (RHEED) technique has been successfully used. In the present project, the investigator aimed to develop a Reflection High Energy Positron Diffraction (RHEPD) technique for the first time. As compared with RHEED, RHEPD is superior in the following points; low multiple scattering, no exchange interaction, nearly zero inner potential and so on.
In this project, the investigator manufactured trially a Reflection High Energy Positron Diffractometer for the first time in the world. In FY1991, the installation of vacuum systems for the diffractometer, the brightness enhancement of the monoenergetic positron beam, the acceleration of positrons up to 50 keV and so on have been completed. In FYI1992, the operation of ultra high vacuum systems was successfully conducted and a new and high efficient positron moderator composed of a W film and A Si wafer has been developed. The computer program for the data aquisition of two dimensional images of RHEPD patterns has been developed. As a result, the accumulation of two dimensional data in real time has been possible. As the first target of the RHEPD experiment, we selected the Se-coated GaAs(100) surface. At present, the 2 X 1 structure was observed after heating at 550゚C. The high statistic RHEPD data are now being accumulated. During the two years research , the basis for the REPD spectrometer has been constructed.

Report

(3 results)
  • 1992 Annual Research Report   Final Research Report Summary
  • 1991 Annual Research Report
  • Research Products

    (25 results)

All Other

All Publications (25 results)

  • [Publications] 谷川 庄一郎,鈴木 良一: "陽電子消滅の計測と得られる情報-2次元角相関" Radioisotopes. 41. 420-430 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 上殿 明良,谷川 庄一郎: "ポジトロン消滅と材料の解析" 表面. 30. 588-597 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 谷川 庄一郎: "陽電子分光学とその応用" 分光研究. 41. 229-248 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 谷川 庄一郎,上殿 明良,鈴木 良一: "陽電子ビーム-低速陽電子ビームの発生" Radioisotopes. 41. 536-542 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 谷川 庄一郎: "陽電子スペクトル-陽電子オージェ分光、陽電子イオン化質量分析" Radioisotopes. 42. 120-130 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 上殿 明良,谷川 庄一郎: "筑波大学における放射性同位元素を用いた低速陽電子発生装置" 放射線. 18,No.2. 41-54 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] J. L. Lee, L. Wei, S. Tanigawa, H. Oigawa and Y. Nannichi: "The effect of surface oxides on the creation of point defects in GaAs studied by slow positrons" Jpn. J. Appl. Phys.30. L138-L141 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] J. L. Lee, S. Tanigawa, H. Oigawa and Y. Nannicni: "Evidence for the passivation effect in (NH)4^s_-treated GaAs observed by slow positrons" Appl. Phys. Lett.58. 1167-1169 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] J. L. Lee, L. Wei, S. Tanigawa and M. Kawabe: "Be diffusion mechanism in GaAs investigated by slow positron beam" J. APPL. Phys.69. 6364-6368 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] J. L. Lee, L. Wei, S. Tanigawa and M. Kawabe: "Impurity effects on both the creation and the migration of Ga vacancies in GaAs" J. Appl. Phys.70. 674-684 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] T. Miyajima, H. Okuyama, K. Akimoto, Y. Mori, L. Wei and S. Tanigawa: "Observation of vacancy type defects in Ga-doped ZnSe a monoenergetic positron beam" Appl. Phys. Lett.59. 1482-1484 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] J. L. Lee, L. Wei, S. Tanigawa, H. Oigawa and Y Nannicni: "Effect of (NH_4)^s_ treatment on the passivation of GaP surface" J. Appl. Phys.70. 2877-2879 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 谷川 庄一郎,鈴木 良一: "陽電子消滅の計測と得られる情報-2次元角相関" Radioisotopes. 41. 420-430 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 上殿 明良,谷川 庄一郎: "ポジトロン消滅と材料の解析" 表面. 30. 588-597 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 谷川 庄一郎: "陽電子分光学とその応用" 分光研究. 41. 229-248 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 谷川 庄一郎,上殿 明良 鈴木 良一: "陽電子ビーム-低速陽電子ビームの発生" Radioisotopes. 41. 536-542 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 谷川 庄一郎: "陽電子スペクトル-陽電子オージェ分光,陽電子イオン化質量分析" Radioisotopes. 42. 120-130 (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] 上殿 明良,谷川 庄一郎: "筑波大学における放射性同位元素を用いた低速陽電子発生装置" 放射線. 18,No.2. 41-54 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] D.E.Bliss,W.Walukiewicz,J.W.Ager,E.E.Haller,K.T.Chan and S.Tanigawa: "Annealing studies of low temperature-grown GaAs:Be" J.Appl.Phys. 71. 1699-1707 (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] S.Shikata,S.Fujii,L.Wei and S.Tanigawa: "Effect of annealing method on vacancy-type defects in Si^+-implanted GaAs studied by a slow positron beam" Jpn.J.Appl.Phys.31. 732-736 (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] J.L.Lee,L.Wei,S.Tanigawa,T.Nakagawa,K.Ohta and J.Y.Lee: "The effect of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing" IEEE Trans.on Electron Devices. 39. 176-183 (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] L.Wei,Y.Tabuki,H.Kondo,S.Tanigawa,R.Nagai and E.Takeda: "Stress induced rearrangement of oxygen atoms in Si investigated by a monoenergetic positron beam" J.Appl.Phys.70. 7543-7548 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] M.Saito,A.Oshiyama and S.Tanigawa: "Anisotropic momentum distribution of positron annihilation radiations in semiconductors" Phys.Rev.B. 44. 10601-10609 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] L.Wei,Y.K.Cho,C.Dosho,S.Tanigawa,T.Yodo and K.Yamashita: "Defects in MOVPE-grown ZnSe films on GaAs investigated by monoenergetic positrons" Jpn.J.Appl.Phys. 30. 2442-2448 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] 谷川 庄一郎(分担): "最新「固体表面/微小領域の解析・評価技術」第3章" リアライズ社, 410 (1991)

    • Related Report
      1991 Annual Research Report

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Published: 1991-04-01   Modified: 2016-04-21  

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