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Low Temperature Growth of Diamond Films from Vapor Phase

Research Project

Project/Area Number 03650009
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionKanazawa University

Principal Investigator

WATANABE Ichiro  Kanazawa University, Faculty of Technology, Professor, 工学部, 教授 (70019743)

Co-Investigator(Kenkyū-buntansha) SAKUTA Tadahiro  Kanazawa University, Faculty of Technology, Associate Professor, 工学部, 助教授 (80135318)
Project Period (FY) 1991 – 1992
Project Status Completed (Fiscal Year 1992)
Budget Amount *help
¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1992: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1991: ¥1,000,000 (Direct Cost: ¥1,000,000)
KeywordsDiamond film / RF glow discharge / CVD / Low temperature / Plasma / Raman scattering / 高周波グロ-放電
Research Abstract

The synthesis of diamond films from ethyl alcohol and hydrogen was performed objecting to synthesize them at temperature as low as possible. We used a capacitively coupled rf (13.56 MHz) plasma CVD apparatus and an external heater. The films were prepared at various conditions varying gas pressure, gas concentration, heating temperature and electorode distance. The films were characterized by Raman scattering, SEM and ESR, and the following results were obtained.
1. When a reaction tube with a diameter of 50 mm is used, diamond films do not grow if the tube is not heated. This is due to that the temperature produced by only rf discharge is not sufficient for diamond growth.
2. When the temperature is set at 550゚C by an electric furnace, diamonds grow at gas pressures of 1 - 3 Torr and ethyl alcohol concentrations of 1 - 3 %.
3. Under above pressure and concentration, diamonds grow at temperatures of 350 - 800゚C.
4. The films grown at 350゚C contain nondiamond components in addition to diamonds. They are composed of balllike particles.
5. When a reaction tube with a diameter of 35 mm and an infrared heater are used, the film of high quality is obtained by optimizing the electrode distance.
6. In above case, the film without nondiamond components is obtained even without the heating. The temperature in this case is estimated to be 370゚C.

Report

(3 results)
  • 1992 Annual Research Report   Final Research Report Summary
  • 1991 Annual Research Report
  • Research Products

    (4 results)

All Other

All Publications (4 results)

  • [Publications] Ichiro.Watanabe: "Low-Temperature Synthesis of Diamond Films in Thermoassisted RF Plasma Chemical Vapor Deposition" Japanese Journal of Applied Physics. 31. 1428-1431 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Ichiro Watanabe, Takashi Matsushita and Koujyu Sasahara: "Low-Temperature Synthesis of Diamond Films in Thermoassisted RF Plasma Chemical Vapor Deposition" Japanese Journal of Applied Physics. 31 Part 1 5A.1428-1431 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Ichiro Watanabe: "Low-Temperature Synthesis of Diamond Films in Thermoassisted RF Plasma Chemical Vapor Deposition" Japanese Journal Applied Physics. 31. 1428-1431 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Ichiro Watanabe Tarashi Matsushita and Koujyu Sasahara: "LowーTemperature Synthesis of Diamond Films in Thermoassisted RF Plasma Chemical Vapor Deposition" Japanese Journal of Applied Physics. 31.

    • Related Report
      1991 Annual Research Report

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Published: 1991-04-01   Modified: 2016-04-21  

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