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OPTICAL STUDY OF NEW THERMAL DONORS IN SILICON

Research Project

Project/Area Number 03650017
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionOKAYAMA UNIVERSITY

Principal Investigator

KAMIURA Yoichi  OKAYAMA UNIVERSITY FAC.OF ENGI.ASSOCIATE PROFESSOR, 工学部, 助教授 (30033244)

Project Period (FY) 1991 – 1993
Project Status Completed (Fiscal Year 1993)
Budget Amount *help
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1993: ¥200,000 (Direct Cost: ¥200,000)
Fiscal Year 1992: ¥200,000 (Direct Cost: ¥200,000)
Fiscal Year 1991: ¥1,600,000 (Direct Cost: ¥1,600,000)
KeywordsSilicon / Thermal Donor / Oxygen Donor / Infrared Absorption / Double Donor / Oxygen Cluster / Oxygen Diffusion / サ-マル・ドナ- / 酵素ドナ- / ダブル・ドナ- / 酵素クラスタ-
Research Abstract

1. We have measured infrared absorption at 4K of phosphorus-doped CZ Si crystals annealed at 470゚C for long durations. We have observed many sharp absorption peaks arising from the electronic transitions from the ground states to excited states of the shallow levels of several species of thermal donor (TD). The present work has been made to investigate the relationship between the annihilation behavior of these TD peaks and the generation behavior of new thermal donor (NTD) during the prolonged annealing and the effects of carbon on this relationship and also to discuss the mechanism of the generaton and annihilation of TD and NTD and the mechanism of their electrical activation.
2. The results obtained are as follows. The same infrared absorption peaks were observed regardless of the carbon density. This means that the same TD species were formed independently of the carbon density. However, the formation of TD was suppressed by the presence of carbon. More remarkably, the annihilation of TD occurred anomalously rapidly in carbon-rich crystals, accompanying the annihilation of substitutional carbon. An important feature is the close correlation of these annihilation with the formation of NTD.
3. We propose the following hypothesis. Si self-interstitials created during the oxygen aggregation process eject substitutional carbon into an interstitial site and this interstitial carbon rapidly diffuses to TD to decorate them so as to form electrically inactive clusters, which act as the embryos of NTD.In other words, oxygen atoms diffuse to these neutral embryos to grow the clusters and cause the generation of electrically active donors, NTD.

Report

(4 results)
  • 1993 Annual Research Report   Final Research Report Summary
  • 1992 Annual Research Report
  • 1991 Annual Research Report
  • Research Products

    (7 results)

All Other

All Publications (7 results)

  • [Publications] 上浦 洋一: "Oxygen-Related Donors in Silicon" Proc.of Symposium on Advanced Science and Technology of Silicon Materials. 442-448 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 上浦 洋一: "Defect Symmetries and Structures of Oxygen-Related Donors in Silicon Studied by Stress Deep-Level Transient Spectroscopy" Jpn.J.Appl.Phys.Suppl.32-1. 32. 258-260 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 上浦 洋一: "Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy" Jpn.J.Appl.Phys.32. L1715-L1717 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.KAMIURA: "OXYGEN-RELATED DONORS IN SILICON" PROC.OF SYMPOSIUM ON ADVANCED SCIENCE AND TECHNOLOGY OF SILICON MATERIALS. 442-448 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.KAMIURA: "DEFECT SYMMETRIES AND STRUCTURES OF OXYGEN-RELATED DONORS IN SILICON STUDIED BY STRESS DEEP-LEVEL TRANSIENT SPECTROSCOPY" JAPANESE JOURNAL OF APPLIED PHYSICS. VOL.32, SUPPLEMENT 32-1. 258-260 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.KAMIURA: "CARBON-INDUCED RAPID ANNIHILATION OF THERMAL DOUBLE DONORS IN CZOCHRALSKI SILICON STUDIED BY INFRARED ABSORPTION SPECTROSCOPY" JAPANESE JOURNAL OF APPLIED PHYSICS. VOL.32, NO.12A. L1715-L1717 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 上浦洋一: "Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy" Japanese Journal of Applied Physics,Part2. 32. L1715-L1717 (1993)

    • Related Report
      1993 Annual Research Report

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Published: 1991-04-01   Modified: 2016-04-21  

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