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Light-Emitting Mechanism of Rare-Earth Doped III-V Compound Semiconductor and the Light-Emitting Devices of Carrier Injection Type

Research Project

Project/Area Number 03650022
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionMeiji University

Principal Investigator

UEKUSA Shin-ichiro  Meiji Univ., School of Science & Technology, Professor, 理工学部, 教授 (10061970)

Co-Investigator(Kenkyū-buntansha) MATSUMOTO Hironaga  Meiji Univ., School of Science & Technology, Assistant, 理工学部, 助手 (50062005)
OKA Eiichi  Meiji Univ., School of Science & Technology, Professor, 理工学部, 教授 (00061953)
TOMIZAWA Kazutaka  Meiji Univ., School of Science & Technology, Professor, 理工学部, 教授 (80110980)
Project Period (FY) 1991 – 1992
Project Status Completed (Fiscal Year 1992)
Budget Amount *help
¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1992: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1991: ¥1,400,000 (Direct Cost: ¥1,400,000)
KeywordsRare-Earth Elements / III-V Compound Semiconductors / Luminescences / Energy Transfer / EL Devices / Light-Emitting Diode / Laser Diode / III-IV族半導体 / IIIーV族半導体 / エネルギ-伝達 / 発光ダイオ-ド / レ-ザ-ダイオ-ド
Research Abstract

Photoluminescence (PL) and electroluminescence (EL) spectra of rare earth doped III-V compound semiconductors and Si were investigated in order to clear the light emitting mechanism of the samples prepared by three methods such as liquid-phase epitaxy (LPE), thermal diffusion and ion-implantaion. We observed the luminescence spectra with peculiar peaks which are related to the internal 4f-4f transitions of the rare earth atoms, (which are independent of the optical properties or the band structure of semiconductor). The rare earth doped III-V compound semiconductor systems are promising materials for a new type of optoelectronic devices and EL devices such as laser diode and light-emitting diode. The following results were obtained.
1 Liquid-phase epitaxy (LPE)
The Yb^<3+>-related luminescence around 1000nm was obtained through the PL or EL measurements from different Yb compounds as YbF_3,YbP in GaAs.
For EL samples, the rare earth in GaAs can be excited by carrier injection.
The Yb^<3+>-related emission of GaAs : YbF_3 and GaAs : YbP was relatively broad compared with InP : YbCl_3 because the Yb^<3+> forms complex centers with some defects or impurities in GaAs.
2 Thermal diffusion
The Er^<3+>-related luminescence around 1540nm was obtained from the Er^<3+>ions in Si, and the photoluminescence excitation spectroscopy (PLE) spectra consisted of sharp peaks which were caused by the direct excitation of Er^<3+>ions.
For InP : Er, Er^<3+>-related luminescence was not observed.
3 Ion-implantation
InP : Yb and Si ; Er showed intense rare-earth related emission compared with LPE and a thermal diffusion.
For InP : Yb, when Yb^<3+>ion was excited by the photon energy below the InP-band-gap, Yb^<3+>-related emssion was strong because the new efficient energy transfer processes to Yb^<3+> ions occurred through the defect energy levels.

Report

(3 results)
  • 1992 Annual Research Report   Final Research Report Summary
  • 1991 Annual Research Report
  • Research Products

    (39 results)

All Other

All Publications (39 results)

  • [Publications] 真島 晃彦ら: "GaAs:YbF_3およびGaAs:YbPエピタキシャル層の光学的・電気的性質" 明治大学理工学部研究報告. No.5. 13-19 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Tsutomu Iida et al.: "Characterization of Novel Emission Lines in Mg^+ -Implanted InP" Materials Risearch Society,Symp.Proc.Vol.235. 241-246 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Akimasa Yamada et al.: "Anomalous Photoluminescence and Raman Scatting Behavior in Heavily Mg^+ -Ion- Implanted InP" Appl.Phys.A.Solids and Surfaces.Vol.A53. 102-108 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Shin-ichiro Uekusa et al.: "Optical and Electical Properties of GaAs:YbF_3 and GaAs:YbP Epitaxial Layers" Proceedings of the Sixth International Workshop on Electroluminescence. 416-420 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Shin-ichiro Uekusa et al.: "Optical Activity of Yb^<3+> in MeV Ion-Implanted InP" Materials Research Society,Symp.Proc.(1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Akihiko Majima et al.: "Optical Direct and Indirect Excitation of Er^<3+> Ions in Silicon" Materials Research Society,Symp.Proc.(1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Tsutomu Iida et al.: "Characterization of Novel Emission Lines in Mg^+ -Implanted InP" Materials Research Society,Fall Meeting. 24- (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Shin-ichiro Uekusa et al.: "Optical and Electrical Properties of GaAs:YbF_3 and GaAs:YbP Epitaxial Layers" Proceedings of the Sixth International Workshop on Electoluminescence. (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Shin-ichiro Uekusa et al.: "Optical Activity of Yb^<3+> in MeV Ion-Implanted InP" Materials Research Society,Spring Meeting.E3.8. (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Akihiko Majima et al.: "Optical Direct and Indirect Excitation of Er^<3+> Ions in Silicon" Materials Research Society,Spring Meeting.E2.4/B8.4. (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 中村 幸治ら: "Er^<3+>を拡散したInPのフォトルミネッセンス" 第52回応用物理学会学術講演会、1991年10月12,岡山大学、. 12a-F-2. 1245-

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 野寄 佳成ら: "イオン注入したInP:YbのPL特性への熱処理効果" 第53回応用物理学会学術講演会、1992年9月16日,関西大学、. 16p-ZC-1. 1083-

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 勝俣 裕ら: "MeVイオン注入によるInP:Ybの励起・発光スペクトル" 第40回応用物理学会関係連合講演会、1993年4月1日、青山学院大学、. 1a-F-7. 1302-

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] 大竹 健一郎ら: "ErイオンをMeVイオン注入したSiの発光スペクトル" 第40回応用物理学会関係連合講演会、1993年4月1日、青山学院大学、. 1p-ZC-8. 792-

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Akihiko Majima et al: "Optical and Electrical Properties of GaAs : YbF_3 and GaAs : YbP Epitaxial Layers" Research Reports of School of Science and Technology Meiji University. No.5 (61). 13-19 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Tsutomu Iida et al: "Characterization of Novel Emission Lines in Mg^+-Implanted InP" Materials Research Society, Symp, proc.Vol.235. 241-246 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Akimasa Yamada et al: "Anomalous Photoluminescence and Raman Scatting Behavior in Heavily Mg^+ -Ion-Implanted InP" Appl.Phys.A.Solids and Surfaces. Vol.A53. 102-108 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Shin-ichiro Uekusa et al: "Optical and Electical Properties of GaAs : YbF_3 and GaAs : YbP Epitaxial Layers" Proceedings of the Sixth Inrernational Workshop on Electroluminescence. 416-420 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Shin-ichiro Uekusa et al: "Optical Activity of Yb^<3+> in MeV Ion-Implanted InP" Materials Research Society, Symp.Proc.(1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Akihiko Majima et al: "Optical Direct and Indirect Excitation of Er^<3+> Ions in Silicon" Materials Research Society, Symp.Proc.(1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Tsutomu Iida et al: "Characterization of Novel Emission Lines in Mg^+-Implanted InP" Materials Research Society, Fall Meeting. 24 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Shin-ichiro Uekusa et al: "Optical and Electrical Properties of GaAs : YbF_3 and GaAs : YbP Epitaxial Layers" Book of Abstracts Sixth International Workshop on Electoluminescence. 129-130 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Shin-ichiro Uekusa et al: "Optical Activity of Yb^<3+> in MeV Ion-Implanted InP" Materials Research Society, Spring Meeting. E3.8. (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Akihiko Majima et al: "Optical Direct and Indirect Excitation of Er^<3+> Ions in Silicon" Materials Research Society, Spring Meeting. E2.4/E8.4. (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Kouji Nakamura et al.: "Photoluminescence from Er^<3+>-diffused InP" Extended Abstracts (The 52nd Autumn Meeting, 1991) ; The Japan Society of Applied Physics. No.3. 1245 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Yoshinari Noyori et al.: "Thermal Annealing Effect on PL Characteristics of InP : Yb Prepared by Ion Implantation" Extended Abstracts (The 53nd Autumn Meeting, 1992) ; The Japan Society of Applied Physics. No.3. 1083 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Hiroshi Katsumata et al.: "Photoluminescence and Photoluminescence Excitation Spectra on InP : Yb Prepared by MeV Ion Implantation" Extended Abstracts (The 40th Spring Meeting, 1993) ; The Japan Society of Applied Physics and Related Societies. No.3. 1302 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] Ken-ichiro Ootake et al.: "Photoluminescence of MeV erbium-implanted Silicon" Extended Abstracts (The 40th Spring Meeting, 1993) ; The Japan Society of Applied Physics and Related Societies. No.3. 792 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1992 Final Research Report Summary
  • [Publications] S. UEKUSA: "OPTICAL AND ELECTRICAL PROPERTIES OF GaAs:YbF_3 AND GaAs:YbP EPITAXIAL LAYERS" PROCEEDINGS OF THE SIXTH INTERNATIONAL WORK SHOP ON ELECTROLUMINESCENCE.416-420 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] S. UEKUSA: "OPTICAL ACTIVITY OF Yb^<3+> IN MeV 10N-IMPLANKED InP." Materials Research Society. Meeting. Spring. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] A. Majima: "OPTICAL DIRECT AND INDIRECT EXCITATION OF Er^<3+> IONS IN SILICON" Materials Research Society. Meeting Spring.(1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] 野寄 佳成: "イオン注入したInP:YbのPL特性への熱処理効果." 応用物理学会予稿集 (秋). 1083 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 勝俣 裕: "MeV イオン注入によるInp:Ybの励起・発光スペクトル." 応用物理学会 予稿集 (春). (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] 大竹 健一郎: "ErイオンをMeVイオン注入したSiの発光スペクトル." 応用物理学会 予稿集 (春). (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] 真島 晃彦: "GaAs:YbF_3およびGaAs:YbPエピタキシャル層の光学的・電気的性貭" 明治大学理工学部研究報告. 5. 13-19 (1992)

    • Related Report
      1991 Annual Research Report
  • [Publications] Tsutomu IIDA: "CHARACTERIZATION OF NOVEL EMISSION LINES IN Mg^+ーIMPLANTED InP" Materials Research Society.Fall Meeting. 24 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] Tsutomu IIDA: "CHARACTERIZATION OF NOVEL EMISSION LINES IN Mg^+ーIMPLANTED InP" Materials.Research Society.Smp.Proc.(1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] AKMASA Yamada: "Anomalons Photolumineseence and Raman Scattering Behavior in Heavily Mg^+ IonーImplanted InP." Appl.Phys.A Solids and Surfaces.A53. 102-108 (1991)

    • Related Report
      1991 Annual Research Report
  • [Publications] 中村 幸治: "Er^<3+>を拡散したInPのフォトルミネッセンス" 応用物理学会予稿集(秋). 1245 (1991)

    • Related Report
      1991 Annual Research Report

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Published: 1991-04-01   Modified: 2016-04-21  

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