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Basic research on semiconductor materials and devices

Research Project

Project/Area Number 04045023
Research Category

Grant-in-Aid for international Scientific Research

Allocation TypeSingle-year Grants
SectionUniversity-to-University Cooperative Research
Research InstitutionTokyo institute of Technology

Principal Investigator

FURUYA Kazuhito (1993-1994)  Tokyo Institute of Technology, 工学部, 教授 (40092572)

柊元 宏 (1992)  東京工業大学, 工学部, 教授 (50013488)

Co-Investigator(Kenkyū-buntansha) SUH Eun-kyung  Jeonbuk National University, 助教授
SEO Jae-myung  Jeonbuk National University, 助教授
LIM Kee-young  Jeonbuk National University, 助教授
LEE Hyung-jae  Jeonbuk National University, 教授
IGA Kenichi  Tokyo Institute of Technology, 精密工学研究所, 教授 (10016785)
KUKIMOTO Hiroshi  Tokyo institute of Technology, 工学部, 教授 (50013488)
TAKAHASHI Kiyoshi  Tokyo Institute of Technology, 工学部, 教授 (10016313)
SEO Jae Myun  全北大学, 助教授
EUN Kyung Su  韓国, 全北大学・半導体物理研究センター, 助教授
JAE Myung Se  韓国, 全北大学・半導体物理研究センター, 助教授
KEE Young Li  韓国, 全北大学・半導体物理研究センター, 助教授
HYUNG Jae Le  韓国, 全北大学・半導体物理研究センター, 教授
古屋 一仁  東京工業大学, 工学部, 教授 (40092572)
Project Period (FY) 1992 – 1994
Project Status Completed (Fiscal Year 1994)
Budget Amount *help
¥5,400,000 (Direct Cost: ¥5,400,000)
Fiscal Year 1994: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1993: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1992: ¥1,800,000 (Direct Cost: ¥1,800,000)
KeywordsUltrafast electronics / Optoelectronics / Quantum effect electronics / Japan-Korea academic cooperation / Jeonbuk University Semiconductor Physics Research Center / 日韓合同シンポジウム / 半導体物理研究センターシンポジウム / 21世紀に向けたオプトエレクトロニクス / 半導体 / 半導体材料 / 半導体デバイス / ヘテロ構造 / 量子構造
Research Abstract

From 22 June 1994 to 26 June, we invited two researchers from Korea to Tokyo Institute of Technology. At Ultrafast Electronics Research Building in Tokyo Institute of Technology, researchers from Korea and Japan had meetings to discuss on the ultrafast electronics, the optoelectronics, and the advanced process techniques. During their stay in Japan, Korean and Japanese researchers attended the Solid State Devices and Materials Conference to discuss on latest research topics and trend and the direction of our research cooperation.
From 24 November 1994 to 27 November, one researcher visited the Semiconductor Physics Research Center of Jeonbuk University in Korea from Tokyo Institute of Technology to present an invited talk at the Symposium of Semiconductor Physics on Korea. Researchers from Japan and Korea discussed on quantum effect physics and device application. He also visited research facilities in the Center.
From 26 January 1995 to 27 January, two Korean researchers visited Tokyo Institute of Technology from Jeonbuk University to discuss on quantum effect physics and its device application. Japanese researcher explained about the system of the Quantum Effect Electronics Research Center newly opened in June 1995 at Tokyo Institute of Technology.
Owing to the above international activity on the research, we have started to cooperate on the research of semiconductor physics, materials and its device applications.

Report

(3 results)
  • 1994 Final Research Report Summary
  • 1993 Annual Research Report
  • 1992 Annual Research Report
  • Research Products

    (47 results)

All Other

All Publications (47 results)

  • [Publications] Kzuhito Furuya: "Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices" Jpn.J.Appl.Phys.33. 925-928 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kazuhito Furuya: "Analysis of phase breaking effect in resonant tunneling diodes using correlation function" Jpn.J.Appl.Phys.33. 2511-2512 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kazuhito Furuya: "Estimation of Phase Coherent Length of Hot Electrons in GaInAs using Resonant Tunneling Diodes" Jpn.J.Appl.Phys.33. 6491-6495 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kiyoshi Takahashi: "Effects of SiH_2Cl_2 on low-temparature(<200℃) Si epitaxy by photochemical vapor deposition" Applied Surface Science. 79. 215-219 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kiyoshi Takahashi: "Effect of the addition of an elemental Ga flux on the metalorganic molecular beam epitaxial growth of heavily carbon-doped InGaAs" Journal of Crystal Growth. 136. 186-190 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kiyoshi Takahashi: "Low Temparature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium" Jpn.J.Appl.Phys.33. 6090-6094 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hiroshi Kukimoto: "Atomic Layer Epitaxy of AlAs Using Ethyldimethylamine Alane as a New Aluminum Source" Appl.Phys.Lett.65. 1115-1117 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hiroshi Kukimoto: "Metalorganic Vapor Phase Epitaxy Growth of p-Type ZnSSe and Its Application for Blue-Green Lasers" J.Cryst.Growth. 138. 755-758 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hiroshi Kukimoto: "Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers" Jpn.J.Appl.Phys.33. 1211-1212 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kenichi Iga: "Highly p-type doping of ZnSe using Li_3N diffusion" Appl.Phys.Lett.65. 2437-2438 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kenichi Iga: "Two-dimensional multiwavelength surface emitting laser arrays fabricated by nonplanal MOCVD" Electron.,Lett.30. 1947-1948 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kenichi Iga: "Measurement of Sidewall Roughness of InP Etched by Reactive Ion Beam Etching" Jpn.J.Appl.Phys.33. 6737-6738 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hyung-Jae Lee: "Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temparature gradient vapor transport depositon" Appl.Phys.Lett.65. 2597-2599 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hyung-Jae Lee: "Light-emission phenomena from porous silicon;Siloxene compounds and quantum size effect" J.Appl.Phys.75. 8060-8065 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hyung-Jae Lee: "Formation mechanism and pore size control of light emitting porous silicon" Jpn.J.Appl.Phys.33. 6425 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kee-Young Lim: "Intensity variation of PL in In_xGa_1-_xAs/GaAs multiquantum-well structures" Appl.Phys.Lett.65. 333 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Jae-Myung Seo: "Existence of metastable molecular precursors to dissociative oxygen chemisorption Si(111) and Si(100) at 40 K" J.of Vac.Sci.& Tech.A. 12. 2255 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Eun-Kyung Suh: "Semi-Insulation Substrate Effects on Pure GaAs Epilayers" Jpn.J.Appl.Phys.33. 2457-2462 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kazuhito Furuya: "Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices" Jpn.J.Appl.Phys.33. 925-928 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kazuhito Furuya: "Analysis of phase breaking effect in resonant tunneling diodes using correlation function" Jpn.J.Appl.Phys.33. 2511-2512 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kazuhito Furuya: "Estimation of Phase Coherent Length of Hot Electrons in GaInAs using Resonant Tunneling Diodes" Jpn.J.Appl.Phys.33. 6491-6495 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kiyoshi Takahashi: "Effects of SiH_2Cl_2 on low-temparature (<200゚C) Si epitaxy by photochemical vapor deposition" Applied Surface Science. 79. 215-219 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kiyoshi Takahashi: "Effect of the addition of an elemental Ga flux on the metalorganic molecular beam epitaxial growth of heavily carbon-doped InGaAs" Journal of Crystal Growth. 136. 186-190 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kiyoshi Takahashi: "Low Temparature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium" Jpn.J.Appl.Phys.33. 6090-6094 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hiroshi Kukimoto: "Atomic Layr Epitaxy of AlAs Using Ethyldimethylamine Alane as a New Aluminum Source" Appl.Phys.Lett.65. 1115-1117 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hiroshi kukimoto: "Metalorganic Vapor Phase Epitaxy Growth of p-Type ZnSSe and Its Application for Blue-Green Lasers" J.Cryst.Growth. 138. 755-758 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hiroshi Kukimoto: "Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers" Jpn.J.Appl.Phys.33. 1211-1212 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kenichi Iga: "Highly p-type doping of ZnSe using Li_3N diffusion" Appl.Phys.Lett.65. 2437-2438 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kenichi Iga: "Two-dimensional multiwavelength surface emitting laser arrays fabricated by nonplanal MOCVD" Electron., Lett.30. 1947-1948 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kenichi Iga: "Measurement of Sidewall Roughness of Inp Etched by Reactive Ion Beam Etching" Jpn.J.Appl.Phys.33. 6737-6738 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hyung-Jae Lee: "Interfacial layr formation of the CdTe/InSb heterointerfaces grown by temparature gradient vapor transport depositon" Appl.Phys.Lett.65. 2597-2599 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hyung-Jae Lee: "Light-emission phenomena from porous silicon ; Siloxene compounds and quantum suze effect" J.Appl.Phys.75. 8060-8065 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Hyung-Jae Lee: "Formation mechanism and pore size control of light emitting porous silicon" Jpn.J.Appl.Phys.33. 6425- (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Kee-Young Lim: "Intensity vatiation of PL in In_xGa_<1-x>As/GaAs multiquantum-well structures" Appl.Phys.Lett.65. 333- (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Jae-Myung Seo: "Existence of metastable molecular precursors to dissociative oxygen chemisorption Si(111) and Si (100) at 40 K" J.of Vac.Sci.& Tech.A. 12. 2255- (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Eun-Kyung Suh: "Semi-Insulation Substrate Effects on Pure GaAs Epilayrs" Jpn.J.Appl.Phys.33. 2457-2462 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Furuya: "Influence of Impurities on the Performance of Doped-Well GaInAs/InP Resonant Tunneling Diodes" Jpn.J.Appl.Phys. 32. 243-246 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Takahashi: "Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH_2Cl_2" Jpn.J.Appl.Phys. 33. 153-155 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] H.Kukimoto: "Epitaxial Growth of Wide-Gap Chalcopyrite Materials-Current State and Future-" Jpn.J.Appl.Phys. 32. 10-13 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Iga: "Transverse-mode Charactertistics of InGaAs/GaAs Vertical Cavity Surface Emitting Lasers Considerig Gain Offset" Jpn.J.Appl.Phys. 32. 1612-1614 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] H.J.Lee: "Temperature dependence of optical properties of light emitting porous silicon" J.Korean.Phys.Soc.26. S103 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Y.Lim: "Simple Model for the Second Substrate Current Hump in Short-Channel LDD MOSFETs" Phys.Stat.Sol.(a). 136. K71 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Y.H.Seo: "Photoluminescence Raman scattering and infrared absorption studies of poroues silicon" Appl.Phys.Lett.62. 1812 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] E.K.Suh: "Correlation of optical and structural properies of light emitting porous silicon" Appl.Phys.Lett.62. 855 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.TAKAHASHI: "Quantum Functional Devices for the 21st Centuy" The 2nd Japan-Korea Joint Symposium ¨Quantized Electronic Structures of Semiconductors¨. 1-7 (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.KUKIMOTO: "AIP-GaP Short-Period Superlattices" The 2nd Japan-Korea Joint Symposium ¨Quantized Electronic Structures of Semiconductors¨. 16-23 (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] K.IGA: "Multi-Quantum Barrier(MQB)-Its Design and Application to Semiconductor Lasers-" The 2nd Japan-Korea Joint Symposium ¨Quantized Electronic Structures of Semiconductors¨. 68-73 (1993)

    • Related Report
      1992 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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