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新機能光デバイスのための化合物半導体の物性制御の研究

Research Project

Project/Area Number 04204003
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Research InstitutionChiba University

Principal Investigator

吉川 明彦  千葉大学, 工学部, 教授 (20016603)

Co-Investigator(Kenkyū-buntansha) 荒井 滋久  東京工業大学, 工学部, 助教授 (30151137)
小林 洋志  鳥取大学, 工学部, 教授 (40029450)
吉田 博  東北大学, 理学部, 助手 (30133929)
Project Period (FY) 1992
Project Status Completed (Fiscal Year 1992)
Budget Amount *help
¥15,000,000 (Direct Cost: ¥15,000,000)
Fiscal Year 1992: ¥15,000,000 (Direct Cost: ¥15,000,000)
Keywordsプレーナドーピング / 表面光干渉法 / 物質設計 / 電子励起 / ホットウォール成長法 / (SrS / ZnS)多層薄膜 / 量子細線レーザ / 半導体光スイッチ
Research Abstract

本研究では、新しい光デバイスのための化合物半導体の物性制御を実現することを目的として、4名の研究者が関連する点について連絡を取りながら検討を進め、以下のような研究成果を得た。
(1)MBE法において、アンドープZnSe層の成長と窒素プラズマ照射を交互に繰り返すことでプレーナドーピングを実現し、Zn終端面への選択的ドーピングによるアクセプタ濃度が増大することを明らかにした。MOVPE法におけるその場観察法として表面光干渉法(Surface Photo-Interference:SPI)を開発し、ジメチル亜鉛とセレン化水素の交互供給によるZnSe成長過程のSPI観察を行なって、その有用性を示した。(吉川)
(2)ZnSe中のアクセプタを事例とした物質設計を行ない、光による電子励起や電子線照射による電子過多条件下において、熱平衡状態では準安定であるような系を実現した。準安定状態から基底状態への移行プロセスをシミュレーションによって解明・制御することで準安定状態でのドーピングが可能となることが示された。(吉田)
(3)ホットウォール成長法により(SrS/ZnS)多層薄膜を作製した。成長槽外部からZnS,SrSホットウォール内に硫黄を供給し、基板付近の硫黄蒸気圧を制御することで、ZnS,SrSを1A/sec程度の成長速度で再現性よく成長することが可能となった。一層当たりの厚さ20nm、全51層の(SrS/ZnS)_<51>多層薄膜を製作し、界面拡散や格子欠陥の少ない良質なものが得られた。(小林)
(4)電子線直接描画による湿式エッチングとMOVPE法を用い、InP基板上の格子整合系及び圧縮歪みGaInAs/InP多重量子細線構造レーザを試作し、室温連続発振動作を得ることに世界で初めて成功した。多重量子井戸構造の量子閉じ込めシュタルク効果を用いた2種類の空間光スイッチを考察・試作し、2V以下の低電圧動作を達成した。(荒井)

Report

(1 results)
  • 1992 Annual Research Report
  • Research Products

    (28 results)

All Other

All Publications (28 results)

  • [Publications] S.Matsumoto: "New Surface passivation method for GaAs and its effect on the initial growth stage of a heteroepitaxial ZnSe layer" Applied Surface Science. 60/61. 247-280 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] A.Yoshikawa: "Study of Photocatalytic Growth-Rate Enhancement in MOMBE of GaAs on ZnSe by surface absorption" Thin Solid Films. (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] A.Yoshikawa: "Ar ion laser-assisted metalorganec vapor phase epitaxy of ZnSe" Physca B. (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] S.Matsumoto: "Nitrogen Doping of ZnSe and ZnCdSe with the Assistance of Thermal Energy and Photon Energy" Jpn.J.Appl.Phys.32. 731-735 (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] S.Matsumoto: "Planar-Doping of Molecular Beam Epitaxy Grown ZnSe with Plasme-Excited Nitrogen" Jpn.J.Appl.Phys.32. L229-L232 (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] 井口 明義: "SPA法によるZnSe上のGaAs光MOMBE成長初期過程のその場観察" 電気学会論文誌C. 112. 101-106 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.Katayama-Yoshida: "Theory of the Self-compensation in p-type ZnSe" J.Crystal Growth. 119. 625 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] T.Sasaki: "First-principle Theories on Self-compensation in II-VI Semiconductors" OPTOELECTRONICS-Device and Technologies-. 7. 11 (1992)

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      1992 Annual Research Report
  • [Publications] H.Katayama-Yoshida: "Theoretical Approach to p-type Doping" 11th Symposium on Alloy Semiconductor Physics and Electronics. 119 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.Katayama-Yoshida: "Computational Physics and Materials Design" Proceedings of International Symposium on Intelligent Design and Synthesis of Electronic Material Systems,Edited by S.Gonda. 37 (1992)

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      1992 Annual Research Report
  • [Publications] H.Katayama-Yoshida: "Electronic Structure of Spontaneous Superlattice Structure in Compound Semiconductors" Oyobutsuri(in Japanese). 61. 809 (1992)

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      1992 Annual Research Report
  • [Publications] C.Kaneta: "Atomic Configuration,Stabilizing Mechanisms,and Impurity Vibrations of Carbon-oxygen Complexes in Crystalline Silicon" Phys.Rev.B46. 13179 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] S.Tanaka: "Excitation Mechanism of Tm^<3+> Centers in ZnS Electroluminescent Thin-Films" J.Crystal Growth. 117. 997-1001 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] K.Ohmi: "Electroluminescent Devices with(Y_2O_2S:Tb/ZnS)_n Multilayered Phosphor Thin Films Prepared by Multisource Deposition" Jpn.J.Appl.Phys.31(9B). L1366-L1396 (1992)

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      1992 Annual Research Report
  • [Publications] S.Tanaka: "Blue Emitting Electroluminescent Device(ZnS:Tm^<3+>/SrS)_n Multilayered Phosphor Thin-Films" Proc.6th Int.Workshop on Electroluminescence. 193-198 (1992)

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      1992 Annual Research Report
  • [Publications] K.Ohmi: "(Y_2O_2S:Tb/ZnS)_n Multi-layered Thin Film Electroluminescent Devices Prepared by Multi-source Deposition" Proc.6th Int.Workshop on Electroluminescence. 179-186 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] K.Ohmi: "White Light Emitting Electroluminescent Device with(SrS:Ce/ZnS:Mn)_n Multilayered Thin Films" Proc.12th Int.Display Research Conf.725-728 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.Kobayashi: "Color Electroluminescent Phosphor Films-Multilayer Structures and Quantum Well Structures-" Proc.6th Int.Workshop on Electroluminescence. 179-186 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.Kobayashi: "Recent Progress and Problems in High Field Electroluminescence of Inorganic Materials" Proc.IS&SPIE 1993 Int.Symp.Electric Imaging:Sience and Technology. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] 田中 省作: "エレクトロルミネッセンス・ディスプレイ(ELD)発光材料" 材料科学. 29. 79-85 (1992)

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      1992 Annual Research Report
  • [Publications] K.Kudo: "Rppm temperature CW operation of Ga_<0.3>In_<0.7>As/GaInAsP/ImP strained MQW laser with wire active region" IEEE Photon.Technol.Lett.4. 1089-1092 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Y.Miyake: "Threshold current reduction of GaInAs/GaInAsP/InP SCH quantum-well laser with wire-like active region by using p-type substrate" IEEE Photon.Technol.Lett.4. 964-966 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] K.Komori: "Fabrication of GaInAs/InP quantum wires by organometallic-vapor-phase-epitaxial(OMVPE)selective growth on grooved side walls of ultrafine multi-layers" Jpn.J.Appl.Phys.31. L535-L538 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] S.Baba: "A novel integrated-twin-guide(ITG) optical switch with a built-in TIR region" IEEE Photon.Technol.Lett.4. 486-488 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] K.Shimomura: "2V drive-voltage switching operation in 1.55μm GaInAs/InP MQW intersectional waveguide optical switch" Electron.Lett.28. 955-956 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] K.Shimomura: "Low drive voltage inter-sectional waveguide optical switch using GaInAs/InP MQW structure" IEEE Photon.Technol.Lett.4. 360-362 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] K.Shimomura: "Operational wavelength range of GaInAs(P)/InP optical switches using field-induced electro-optic effect in low-dimensional quantum-well structure" IEEE J.Quantum Electron.28. 471-478 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Y.Suematsu: "Advanced semiconductor lasers" Proc.of IEEE. 80. 383-397 (1992)

    • Related Report
      1992 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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