| Project/Area Number |
04402019
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| Research Category |
Grant-in-Aid for General Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | Meiji University |
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Principal Investigator |
HYODO Shinichi (1992-1993, 1995) MEIJI University, Dep. of Physics, Prof., 理工学部, 教授 (30010713)
兵藤 申一 (1994) 明治大学, 理工学部, 教授 (60012019)
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| Co-Investigator(Kenkyū-buntansha) |
INAGAKI Satoru MEIJI University, Dep. of Physics, Prof., 理工学部, 教授 (20092140)
CHOI Pak-kon MEIJI University, Dep. of Physics, Asso. Prof., 理工学部, 助教授 (30143530)
KOIZUMI Hirokazu MEIJI University, Dep. of Physics, Asso. Prof., 理工学部, 助教授 (60126050)
ONODERA Yoshitaka MEIJI University, Dep. of Physics, Prof., 理工学部, 教授 (70087039)
ICHIKAWA Toshihiro MEIJI University, Dep. of Physics, Prof., 理工学部, 教授 (60005965)
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| Project Period (FY) |
1992 – 1995
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| Project Status |
Completed (Fiscal Year 1995)
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| Budget Amount *help |
¥33,000,000 (Direct Cost: ¥33,000,000)
Fiscal Year 1995: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1994: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1993: ¥8,000,000 (Direct Cost: ¥8,000,000)
Fiscal Year 1992: ¥20,800,000 (Direct Cost: ¥20,800,000)
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| Keywords | Liguid Metal Embrittlement / Aluminum / Amorphous Metal / Gallium / Acoustic Emission / Fracture / Scanning Tunneling Microscopy / 銅 / 引張試験 / 単結晶 / 非晶質合金 |
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| Research Abstract |
Liquid metal embrittlement (LME) of Al, Al alloys and amorphous alloy Al_<87>Ni_<10>Ce_3 was studied using various techniques such as acoustic emission, electron microscopy, scanning tunneling microscopy, x-ray photoelectron spectroscopy and electron probe micro analysis.
Ga deposition on the amorphous alloy was found to cause an over 50% reduction in the fracture stress of the alloy, besides, to play a role somewhat in smoothing its serrated stress-strain curve. Acoustic emission was observed for both non-loaded and locaded samples of Al and Al alloys annealed at various temperatures. Results indicate that Ga atoms can penetrate the interior through grain boundaries even in the absence of tensile stress, and that the penetration of Ga atoms is accelerated by applied stress. This AE technique has proved to be very usefull for predicting the occurrence of LME in these materials.
Scanning tunneling microscopy was employed to investigate the detailed surface appearance of Al single crystals deposited by Ga. The obtained images strongly suggested the formation of Al-Ga alloy.
We noticed anomalous Ga diffusion over evaporated Al films on glass substrates. The diffusion velocity was measured to be typically a few cm/h ; the value depended on film thickness, substrate temperature and annealing temperature. The mechanism of this anomalous diffusion was investigated using atomic force microscopy, electron microscopy, XPS and EPMA.
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