Study on generating a flat for Molecular Beam Epitaxy
| Project/Area Number |
04402023
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| Research Category |
Grant-in-Aid for General Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
機械工作
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| Research Institution | Tokyo Metropolitan University |
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Principal Investigator |
FURUKAWA Yuuji Tokyo Metropolitan Univ.Fac.of Tec.Prof., 工学部, 教授 (10087190)
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| Co-Investigator(Kenkyū-buntansha) |
KAKUTA A. Tokyo Metropolitan Univ.Fac.of Tec.Research Ass, 工学部, 助手 (60224359)
YOKOGAWA M. Tokyo Metropolitan Univ.Fac.of Tec.Research Ass, 工学部, 助手 (10191496)
SAKUMA H. Tokyo Metropolitan Univ.Fac.of Tec.Research Ass, 工学部, 助手 (20128573)
MOROUNKI N. Tokyo Metropolitan Univ.Fac.of Tec.Asso.Prof., 工学部, 助教授 (90166463)
OKUMURA T. Tokyo Metropolitan Univ.Fac.of Tec.Prof., 工学部, 教授 (00117699)
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| Project Period (FY) |
1992 – 1993
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| Project Status |
Completed (Fiscal Year 1993)
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| Budget Amount *help |
¥31,600,000 (Direct Cost: ¥31,600,000)
Fiscal Year 1993: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1992: ¥29,500,000 (Direct Cost: ¥29,500,000)
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| Keywords | Molecular Beam Epitaxy / Ultra Precision Machining |
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| Research Abstract |
This study has clarified a possibility to apply a Molecular Beam Epitaxy (MBE) to generate a geometrically flat and crystallography aligned surface. The method is often used to prepara new semi-conductive materials, however, the mechanism how a geometric surface for mechanical use is built up by a deposition of molecules is not known. Taking a homo-epitaxial case as an example, silicon molecular beam was deposited onto a single crystallized silicon substrate, and that process investigated by the help of RHEEDS.A newly obtained surface had better crystalline than that of substrates.
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Report
(3 results)
Research Products
(4 results)
