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Study on Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface and Structure of Interface between Ultra-thin Metal Film and Ultra-thin Silicon Oxide Film

Research Project

Project/Area Number 04452096
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionMusashi Institute of Technology

Principal Investigator

HATTORI Takeo  Musashi Inst.of Technol., Professor, 工学部, 教授 (10061516)

Co-Investigator(Kenkyū-buntansha) NOHIRA Hiroshi  Musashi Inst.of Technol., Assistant, 工学部, 助手 (30241110)
AKIYA Masahiro  Musashi Inst.of Technol., Associate Professor, 工学部, 助教授 (60231833)
Project Period (FY) 1992 – 1993
Project Status Completed (Fiscal Year 1993)
Budget Amount *help
¥6,900,000 (Direct Cost: ¥6,900,000)
Fiscal Year 1993: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1992: ¥4,800,000 (Direct Cost: ¥4,800,000)
KeywordsHydrogen termination / silicon / initial oxidation / oxidation mechanism / interface structure / layr by layr growth / interface reaction / oxidation reaction / 金属 / 酸化膜界面 / シリコン酸化膜 / シリコン界面 / 平坦性 / 初期酸化過程 / 界面形成過程 / 局所的酸化
Research Abstract

In order to form high quality silicon oxide and SiO_2/Si interface in atomic scale, it is important to prepare ultra-clean and atomically flat Si surface. Namely, in the case of Si(111) surface it can be realized by the treatment in 40% NH_4F solution, while in the case of Si(100) surface it can be realized by the epitaxial growth of Si in hydrogen gas at 1100゚C.In either case Si surface is terminated with hydrogen and is atomically flat. Because hydrogen-terminated Si surface is chemically stable, the passivation of Si surface with native oxide is expected to be replaced by that with hydrogen. In the present study initial stage of oxidation of atomically flat hydrogen-terminated Si(111) in 1 Torr dry oxygen at 300゚C was studied in details by X-ray photoelectron spectroscopy. By comparing this experimtal results with simulated results of oxidation process, it was found that the oxidation proceeds non-uniformly and layr by layr growth of oxide proceeds locally. However, if the oxidation is performed in 1 Torr dry oxygen at 600 and 800゚C through 0.5 nm thick oxide formed in 1 Torr dry oxygen at 300゚C, the periodic changes in interface structure appeared with the progress of oxidation. This can be understood by the layr by layr growth of thermal oxide. These results can be understood such that below the critical thickness of 0.5-0.8 nm oxidation proceeds non-uniformly, while above this critical thickness the atomic steps at the interface flow uniformly to result in layr by layr growth of thermal oxide. In order to confirm this important discovery, only a little time could be spent for the formation of metal /Si interface and the measurement of valence band spectra of this system. By the way it was found from the study on the initial stage of oxidation in 1 Torr dry oxygen at 200, 300 and 400゚C that the oxidation proceeds more uniformly at lower oxidation temperature.

Report

(3 results)
  • 1993 Annual Research Report   Final Research Report Summary
  • 1992 Annual Research Report
  • Research Products

    (26 results)

All Other

All Publications (26 results)

  • [Publications] T.Hattori,H.Nohira,Y.Tamura and H.Ogawa: "Initial Stage of SiO_2/Si Interface Formation on Si(111)Surface" Japanese Journal of Applied Physics. 31. L638-L641 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Ogawa and T.Hattori: "Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces" IEICE Transactions on Electronics. E75-C. 774-780 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] N.Terada et al.: "Optical absorption in ultrathin silicon oxide films near the SiO_2/Si interface" Physical Review B. 46. 2312-2318 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Ogawa and T.Hattori: "Detection of Si-H bonds in silicon oxide by X-ray photoelectron spectrum difference" Applied Physics Letters. 61. 577-579 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Yaguchi et al.: "Initial oxidation of MBE-grown Si(100)surfaces" Surface Science. 275. 395-400 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Hattori: "High resolution x-ray photoemission spectroscopy of thin SiO_2 and Si/SiO_2 interfaces" Journal of Vacuum Science and Technology B. 11. 1528-1532 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Hattori, H.Nohira, Y.Tamura and H.Ogawa: "Initial Stage of SiO_2/Si Interface Formation on Si(111) Surface" Jpn. J.Appl. Phys.32-5. pp. L638-L641 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Nohira, Y.Tamura, H.Ogawa and T.Hattori: "Initial Stage of SiO_2/Si Interface Formation on Si(111) Surface" IEICE Trans. Electron.E75-C-7. pp. 757-763 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Ogawa and T.Hattori: "Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surface" IEICE Trans. Electron.E75-C-7. pp. 774-780 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] N.Terada, T.Haga, N.Miyata, K,Moriki, M.Fujisawa, M.Morita, T.Ohmi and T.Hattori: "Optical absorption in ultrathin silicon oxide films near the SiO_2/Si interface" Phys. Rev.B46-4. pp. 2312-2318 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Ogawa and T.Hattori: "Detection of Si-H bonds in silicon oxide by x-ray photoelectron spectrum difference" Appl. Phys. Lett.61-5. pp. 577-579 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Yaguchi, K.Fujita, O.Fukatsu, Y.Shiraki, R.Ito and T.Hattori: "Initial oxidation of MBE-grown Si(100) surfaces" Surf. Sci.275. pp. 395-400 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] M.Yasutake, Y.Ejiri and T.Hattori: "Modification of Silicon Surface Using Atomic Force Microscopy with Conducting Probe" Jpn. J.Appl. Phys.32-7B. pp. L1021-L1023 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Hattori: "High resolution x-ray photoemission spectroscopy studies of thin SiO_2 and Si/SiO_2 interfaces" J.Vac. Sci. Technol.B11-4. pp. 1528-1532 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] M.Yasutake et al.: "Modification of Silicon Surface Using Atomic Force Microscope with Conducting Probe" Japanese Journal of Applied Physics. 32. L1021-L1023 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] T.Hattori: "High resolution x-ray photoemission spectroscopy of thin SiO_2 and Si/SiO_2 interfaces" Journal of Vacuum Science and Technology B. 11. 1528-1532 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Ohishi et al.: "Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface" Extended Abstracts of 1993 Intern.Conf.on Solid State Devices and Materials,Makuhari. 603-605 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] T.Hattori et al.: "INITIAL STAGE OF SiO_2/Si INTERFACE FORMATION ON HYDROGEN-TERMINATED SILIOON SURFACES" Materials Research Society Symposium Proceedings. 315. 387-392 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] T.Hattori and H.Ogawa: "CHEMICAL STRUCTURES OF NATIVE OXIDES FORMED DURING WET CHEMICAL TREATMENTS ON NH_4F TREATED Si(111) SURFACES" The Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface 2. (Plenum Press). 207-214 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 服部 健雄: "シリコン自然酸化膜" 表面技術. 45. 12-16 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] Takeo HATTORI: "Initial Stage of Si02/Si Interface Formation on Si(111) Surface" Japanese Journal of Applied Physics. 31. L638-L641 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Nozumi TERADA: "Optical absorption in ultrathin silicon oxide films near the SiO_2/Si interface" Physical Review. 46B. 2312-2318 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Hiroshi NOHIRA: "Initial Stage of SiO2/Si interface Formation on Si(111) Surface" IEICE TRANSACTION ON ELECTRONICS. E75-C. 757-763 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Hiroki OGAWA: "Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces" IEICE TRANSACTION ON ELECTRONICS. E75-C. 774-780 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Hiroki OGAWA: "Detection of Si-H bonds in silicon oxide by x-ray photoelectron spectrum difference" Applied Physics Letters. 61. 577-579 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 服部 健雄: "Si系材料薄膜の高度評価技術ーSiO_2/Si界面構造への適用例ー" 電気学会論文誌C. 112-C. 641-647 (1992)

    • Related Report
      1992 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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