| Project/Area Number |
04452165
|
|---|
| Research Category |
Grant-in-Aid for General Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
電子材料工学
|
|---|
| Research Institution | Hokkaido University |
|---|
Principal Investigator |
FUKUI Takashi Hokkaido University Research Center for Interface Quantum Electronics, Professor, 量子界面エレクトロニクス研究センター, 教授 (30240641)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
AKAZAWA Masamichi Hokkaido University Faculty of Engineering, Assistant, 工学部・電気工学科, 助手 (30212400)
MOTOHISA Jun-ich Hokkaido University, Research Center for Interface Quantum Electronics, Lecturer, 量子界面エレクトロニクス研究センター, 講師 (60212263)
HASEGAWA Hideki Hokkaido University Faculty of Engineering, Professor, 工学部・電気工学科, 教授 (60001781)
|
|---|
| Project Period (FY) |
1992 – 1993
|
| Project Status |
Completed (Fiscal Year 1993)
|
| Budget Amount *help |
¥7,000,000 (Direct Cost: ¥7,000,000)
Fiscal Year 1993: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1992: ¥5,200,000 (Direct Cost: ¥5,200,000)
|
|---|
| Keywords | Semiconductor / Cryxtal growth / Quantum dot |
|---|
| Research Abstract |
GaAs and AlGaAs micro-Pyramidal Structures having four-fold symetry facets (011) were fabricated using selective area MOVPE on (001) GaAs substrates partlally masked with a SiO_2. In order to study accurate growth rate, wider mask-patterned substrates were used. Low pressure horizontal MOVPE reactor was used. Source materials were TMGa, TEAI, quality of micro-pyramidal structures were characterized by cleaved cross section image of scanning electron microscope (SEM) and photoluminescence (PL) from quantum well. The main results are as follows : The growth rate enhances in selective are growth, compared to a planer GaAs layr. The growth rate enhancement is small under high AsH_3 partical pressure. From these results, growth mechanisms were discussed.
|
