| Project/Area Number |
04452166
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | TOHOKU UNIVERITY |
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Principal Investigator |
MORITA Mizuho TOHOKU UNIVERSITY, GRADUATE SCHOOL OF INFORMATION SCIENCES, ASSOCIATE PROFESSOR, 大学院・情報科学研究科, 助教授 (50157905)
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| Co-Investigator(Kenkyū-buntansha) |
SHIBATA Tadashi TOHOKU UNIVERSITY, FACULTY OF ENGINEERING, ASSOCIATE PROFESSOR, 工学部, 助教授 (00187402)
OHMI Tadahiro TOHOKU UNIVERSITY, FACULTY OF ENGINEERING, PROFESSOR, 工学部, 教授 (20016463)
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| Project Period (FY) |
1992 – 1993
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| Project Status |
Completed (Fiscal Year 1993)
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| Budget Amount *help |
¥6,700,000 (Direct Cost: ¥6,700,000)
Fiscal Year 1993: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1992: ¥5,300,000 (Direct Cost: ¥5,300,000)
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| Keywords | Semiconductor Surface / Oxidation / Thin Film Growth / 半導体薄膜成長 |
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| Research Abstract |
Metal-gap-semiconductor diode structures have been fabricated to demonstrate that the termination of dangling bonds at semiconductor surfaces can be analyzed by observing capture and emission of carriers by surface states. It has been demonstrated that the termination level of dangling bonds at semiconductor surfaces can be evaluated by measuring high-frequency capacitance-voltage characteristics of the diode structure. The high-frequency capacitance-voltage measurements of metal-gap-semiconductor diode structures with hydrogen-terminated and oxygen-terminated silicon surfaces indicate that the surface state density reflects process conditions of silicon surfaces. Furthermore, process determining MOS device performances have been ascertained. The reliability of MOSFET devices depends on the quality of the preoxide which is grown on the silicon surface during the temperature ramp-up in the gate oxide formation process. High reliable MOSFET devices can be fabricated by thinning the preoxide. The contac resistance of metal(tungsten)-semiconductor(silicon) contacts depends on the amount of native oxide grown on the silicon surface during from cleaning the silicon surface to the metal film deposition. The low resistance contacts can be formed by suppressing the native oxide growth.
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