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A STUDY OF ULTRASMALL DEVICE CONTAINING NANOMETER-CONTROLLED Si-Ge HETEROLAYER

Research Project

Project/Area Number 04452167
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

MUROTA Junichi  TOHOKU UNIVERSITY, RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION, ASSOCIATE PROFESSOR, 電気通信研究所, 助教授 (70182144)

Co-Investigator(Kenkyū-buntansha) MATSUURA Takashi  TOHOKU UNIVERSITY, RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION, ASSOCIATE PRO, 電気通信研究所, 助教授 (60181690)
ONO Shoichi  TOHOKU UNIVERSITY, RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION, PROFESSOR, 電気通信研究所, 教授 (00005232)
Project Period (FY) 1992 – 1993
Project Status Completed (Fiscal Year 1993)
Budget Amount *help
¥5,800,000 (Direct Cost: ¥5,800,000)
Fiscal Year 1993: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1992: ¥3,800,000 (Direct Cost: ¥3,800,000)
KeywordsSilicon / Silicon-Germanium / Heterostructure / Heterodevice / Ultrasmall Device / CVD / MOSFET
Research Abstract

The object of this research is to construct the fabrication process of a high performance ultrasmall device containing nanometer controlled Si_<1-x>Ge_x heterolayr. The research results are summarized as follows.
(1) A very low-temperature epitaxial growth process of the Si/Si_<1-x>Ge_x/Si heterostructure with atomically flat surfaces and interfaces for Ge fractions on Si(100) has been achieved under the cleanest possible reaction and interfaces for Ge fracions on Si(100) has been achieved under the cleanest possible reaction environment of SiH_4, GeH_4 and H_2 or Ar using an ultraclean hot-wall low-pressure CVD system. A relatively lower deposition temperatures were suitable for higher Ge fractions in order to prevent island growth of thelayrs during deposition. Atomically flat surfaces and interfaces for the heterostructure containing Si_<0.8>Ge_<0.2>, Si_<0.5>Ge_<0.5> and Si_<0.3>Ge_<0.7> layrs were obtained by deposition at 550, 500 and 450゚C, respectively.
(2) MOSFET's were fabricated at temparetures below 700゚C on the 10nm-thick Si/7nm-thick Si_<1-x>Ge_x/Si heterostructure using a self-alligned Si gate process. A high performance Si_<0.5>Ge_<0.5>-channel MOSFET has been achieved with a large mobility enhancement of about 70% at 300K and over 150% at 77K compared with that of a MOSFET without SiGe-channel.
(3) In-situ B doping control of Si_<1-x>Ge_x layr was achieved in the range of 3x10^<17>-2x10^<20>cm^<-3>. It was found that Hall mobility has a minimum value for Si_<0.75>Ge_<0.25> film, and the mobility of the strained Si_<0.75>Ge_<0.25> film is neary equal to that of the unstrained one.
(4) In-sity B doped selective SiGe epitaxial growth were achieved at 550゚C.Using this selective film, high performance self-aligned ultrashallow junction was formed with a low level reverse current density, the range of 10^<-10>A/cm^2. As a result, the overlap control between gate and source/drain and suppression of short channel effects in ultrasmall MOSFET can be improved.

Report

(3 results)
  • 1993 Annual Research Report   Final Research Report Summary
  • 1992 Annual Research Report
  • Research Products

    (65 results)

All Other

All Publications (65 results)

  • [Publications] Takahiro Maeda: "Low-temperature Si/Si_<1-X>Ge_X/Si heterostructure growth by ultraclean low-pressure CVD" Proceedings of 11th Symposium on Alloy Semiconductor Physics and Electronics. 439-444 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Kinya Goto: "Fabrication of a SiGe-channel MOSFET containing high Ge fraction layer by low-pressure chemical vapor deposition" Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials. 449-451 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 後藤欣哉: "SiGeチャネルMOSFETの製作" 電子情報通信学会技術報告. ED92-81. 19-24 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 室田淳一: "CVDシリコンエピタキシー技術" 応用物理学会結晶工学分科会第19回講習会テキスト. 71-85 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Reiner Schutz: "Low-temperature Si/Si_<1-X>Ge_X/Si heterostructure growth at high Ge fractions by low-pressure chemical vapor deposition" Applied Physics Letters. 61. 2674-2676 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Reiner Schutz: "Si/SiGe/Si heterostructure growth without interface roughness at high Ge-mole fractions by low-temperature low-pressure chemical vapour deposition" Thin Solid Films. 222. 38-41 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Kinya Goto: "Electrical characteristics of B doped Ge films epitaxially grown on Si using Ultraclean chemical vapor deposition" Material Science Forum. 117-118. 153-158 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Kinya Goto: "Fabrication of a Si_<1-X>Ge_X-channel metal-oxide-semiconductor field effect transistor(MOSFET) containing high Ge fraction layer by low-pressure chemical vapor deposition" Japanese Journal of Applied Physics. 32. 438-441 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Takahiro Maeda: "Growth of Si/Si_<1-X>Ge_X/Si heterostructure by low-temperature LPCVD" Proceedings of the 12th International Symposium on Chemical Vapor Deposition. 93-2. 127-133 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Fumitaka Honma: "In-situ B doping of Si_<1-X>Ge_X film epitaxially grown on Si using ultraclean LPCVD" Proceedings of the 12th International Symposium on Chemical Vapor Deposition. 171-177 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Junichi Murota: "Si/Si_<1-X>Ge_X/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel devices" Journal de Physique IV. 3. C3-403-C3-410 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Junichi Murota: "Low-temperature epitaxial growth of in-situ B doped Si_<1-X>Ge_X films" Journal de Physique IV. 3. C3-427-C3-432 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Junichi Murota: "Low-temperature epitaxial growth of Si/SiGe/Si heterostrueture by CVD(Invited)" Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials. 240-242 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Fumitake Honma: "Ultrashallow junction formation using low-temperature selective Si_<1-X>Ge_X CVD" Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials. 380-382 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 本間文孝: "高清浄CVD法によるBドープSi_<1-X>Ge_X薄膜の形成" 電子情報通信学会技術報告. ED93-106. 7-12 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Junichi Murota: "Ultraclean low-pressure CVD for Si/Si_<1-X>Ge_X/Si heterostrueture growth" Proceedings of the International Conference on Advanced Microelectronic Devices and Processing. 221-228 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Kenji Sakamoto: "Diffusion of Ge atoms in Si/Si_<1-X>Ge_X/Si heterostructure observed by Raman scattering" Proceedings of the International Conference on Advanced Microelectronic Devices and Processing. 449-452 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Kinya Goto: "A Si_<1-X>Ge_X-channel MOSFET fabricated by low-pressure chemical vapor deposition" Proceedings of the International Conference on Advanced Microelectronic Devices and Processing. 475-479 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Fumitake Honma: "Low-temperature selective epitaxy of in-situ B doped Si_<1-X>Ge_X film for ultrashallow junction formation" Proceedings of the International Conference on Advanced Microelectronic Devices and Processing. 461-465 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Fumitake Honma: "Ultrashallow junction formation using low-temperature selective Si_<1-X>Ge_X chemical vapor deposition" Japanese Journal of Applied Physics. 33 (発表予定). (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 室田淳一: "「湿度・水分計測と環境のモニタ」の第2編第2章2.4項「半導体産業における問題点」" 技報堂出版, 7 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 室田淳一: "「超高純度ガスの科学」の第1分冊第3編第7章「ウルトラクリーンCVD技術」" リアライズ社, 15 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Maeda, J.Murota, R.Shutz, R.Kircher, K.Yokoo, and S.Ono: ""Low-temperature Si/Si_<1-x>Ge_x/Si heterostructure growth by ultraclean low-pressure CVD"" 11th Record of Alloy Semiconductor Physics and Electronics Symposium (ASPEcs-11), Kyoto. pp.439-444 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] K.Goto, J.Murota, T.Maeda, R.Schutz, K.Aizawa, R.Kircher, K.Yokoo, and S.Ono: ""Fabricaiton of a SiGe-channel MOSFET containing high Ge fraction layr by low-pressure chemical vapor deposition"" Ext. Abstr. Int. Conf. on Solid State Devices and Materials, Tsukuba. pp.449-451 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] R.Shutz, J.Murota, T.Maeda, R.Kircher, K.Yokoo, and S.Ono: ""Low-temperature Si/Si_<1-x>Ge_x/Si heterostructure growth at high Ge fractions by low-pressure chemical vaper deposition"" Applied Physics Letters. Vol. 61, No. 22. pp.2674-2676 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] R.Shutz, J.Murota, T.Maeda, R.Kircher, K.Yokoo, S.Ono, and H.L.Hartnagel: ""Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapor deposition"" Thin Solid Films. Vol.222 Nos.1-2. pp.38-41 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] K.Goto, J.Murota, and S.Ono: ""Electrical characteristics of B doped Ge film epitaxially grown on Si using ultraclean chemical vapor deposition"" Material Science Forum. Vols. 117-118. pp.153-158 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] K.Goto, J.Murota, T.Maeda, R.Schutz, K.Aizawa, R.Kilcher, K.Yokoo, and S.Ono: ""Fabrication of a Si_<1-x>Ge_x-channel metal-oxide-semiconductor field effect transister (MOSFET) containing high Ge fraction layr by low-pressure chemical vaper deposition"" Japanese Journal of Applied Physics. Vol.32, Part 1, No. 1B. p.438-441 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Maeda, J.Murota, K.Sakamoto, K.Aizawa, S.Ushioda, and S.Ono: ""Growth of Si/Si_<1-x>Ge_x/Si heterostructure by ultraclean low-temperature LPCVD"" Proc. 12th Int. Symp. on Chemical Vapor Deposition (CVD-XII), (The Electrochemical Society, Pennington, NJ, 1993). PV93-2. pp.127-133 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] F.Honma, J.Murota, T.Yoshida, K.Goto, T.Maeda, K.Aizawa, and S.Sawada: ""In-situ B doping of Si_<1-x>Ge_x film epitaxially grown on Si using ultraclean LPCVD"" Proc. 12th Int. Symp. on Chemical Vapor Deposition (CVD-XII), (The Electrochemical Society, Pennington, NJ, 1993). PV93-2. pp.127-133 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] J.Murota, T.Maeda, K.Goto, K.Sakamoto, K.Aizawa, S.Ushioda, and S.Ono: ""Si/Si_<1-x>Ge_x/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel heterodevice"" Journal de Physique IV. Vol.3, Colloque C3. pp.403-410 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] J.Murota, F.Honma, T.Yoshida, K.Goto, T.Maeda, K.Aizawa, and Y.Sawada: ""Low-temperature epitaxial growth of in-situ B doped Si_<1-x>Ge_x films"" Journal de Physique IV. Vol.3 Colloque C3. pp.427-432 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] J.Murota, Y.Sawada, and S.Ono: ""Low-temperature epitaxial growth of Si/SiGe/Si heterostructure by CVD" (Invited)" Ext. Abstr. Int. Conf. on Solid State Devices and Materials, Makuhari, August 29-September 1. pp.240-242 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] F.Honma, J.Murota, K.Goto, T.Maeda, and Y.Sawada: ""Ultrashallow junction formation using low-temperature selective Si_<1-x>Ge_x CVD"" Ext. Abstr. Int. Conf. on Solid State Devices and Materials, Makuhari, August 29-September 1. pp.380-382 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] J.Murota, Y.Sawada and S.Ono: ""Ultraclean low-pressure CVD for Si/Si_<1-x>Ge_x/Si heterostrucure growth"" Proc. Int. Conf. on Advanced Microelectronic Devices and Processing, Sendai. pp.221-228 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] K.Sakamoto, J.Murota, T.Maeda, K.Goto, S.Ushioda and S.Ono: ""Diffusion of Ge atoms in Si/Si_<1-x>Ge_x/Si(100) hetero-structures observed by Raman scattering"" Proc. Int. Conf. on Advanced Microelectronic Devices and Processing, Sendai. pp.449-452 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] F.Honma, J.Murota, K.Goto, T.Maeda and Y.Sawada: ""Low-temperature selective epitaxy of in-situ B doped Si_<1-x>Ge_x film for ultrashallow junction formation"" Proc. Int. Conf. on Advanced Microelectronic Devices and Processing, Sendai. pp.461-465 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] K.Goto, J.Murota, T.Maeda, Y.Sawada and S.Ono: ""A Si_<1-x>Ge_x-channel MOSFET fabricated by low-pressure chemical vapor deposition"" Proc. Int. Conf. on Advanced Microelectronic Devices and Processing, Sendai. pp.475-479 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] F.Honma, J.Murota, K.Goto, T.Maeda, and Y.Sawada: ""Ultrashallow junction formation using low-temperature selective Si_<1-x>Ge_x chemical vapor deposition"" Japanese Journal of Applied Physics. Vol. 33, Part 1, No. 4B (in press). (1944)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Takashi Maeda: "Growth of Si/Si_<1-X>Ge_X/Si heterostructure by ultraclean low-temperature LPCVD" Proceedings of the 12th International Symposium on Chemical Vapor Deposition. 93-2. 127-133 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Fumitaka Honma: "In-situ B doping of Si_<1-X>Ge_X film epitaxially grown on Si using ultraclean LPCVD" Proceedings of the 12th International Symposium on Chemical Vapor Deposition. 93-2. 171-177 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Junichi Murota: "Si/Si_<1-X>Ge_X/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel heterodevices" Journal de Physique IV. 3. C3-403-C3-410 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Junichi Murota: "Low-temperature epitaxial growth of in-situ B doped Si_<1-X>Ge_X films" Journal de Physique IV. 3. C3-427-C3-432 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Junichi Murota: "Low-temperature epitaxial growth of Si/Si_<1-X>Ge_X/Si heterostructure by CVD(Invited)" Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials. 240-242 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Fumitaka Honma: "Ultrashallow junction formation using low-temperature selective Si_<1-X>Ge_X CVD" Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials. 380-382 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 本間文孝: "高清浄CVD法によるBドープSi_<1-X>Ge_X薄膜の形成" 電子情報通信学会技術報告. ED93-106. 1-7 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Junichi Murota: "Ultraclean low-pressure CVD for Si/Si_<1-X>Ge_X/Si heterostructure growth(Invited)" Proceedings of the International Conference on Advanced Microelectronic Devices and Processing. 221-228 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] Kinya Goto: "A Si_<1-X>Ge_X-channel MOSFET fabricated by low-pressure chemical vapor deposition" Proceedings of the International Conference on Advanced Microelectronic Devices and Processing. 475-479 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] Fumitaka Honma: "Low-temperature selective epitaxy of in-situ B doped Si_<1-X>Ge_X film for ultrashallow junction formation" Proceedings of the International Conference on Advanced Microelectronic Devices and Processing. 461-465 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] Kenji Sakamoto: "Diffusion of Ge atoms in Si/Si_<1-X>Ge_X/Si(100) heterostructures observed by Raman scattering" Proceedings of the International Conference on Advanced Microelectronic Devices and Processing. 449-452 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] Fumitaka Honma: "Ultrashallow junction formation using low-temperature selective Si_<1-X>Ge_X chemical vapor deposition" Japanese Journal of Applied Physics. 33(発表予定). (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] 室田淳一: "「超高純度ガスの科学」の第1分冊第3編第7章「ウルトラクリーンCVD技術」" リアライズ社, 15 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Takahiro Maeda: "Low-temperature Si/Si_<1-X>Ge_X/Si heterostructure growth by ultraclean low-pressure CVD" Proceedings of 11th Symposium on Alloy Semiconductor Physics and Electronics. 439-444 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Kinya Goto: "Fabrication of a SiGe-channel MOSFET containing high Ge fraction layer by low-pressure chemical vapor deposition" Extended Abstracts of the 1992 International Conference on Solid State Devices and Maferials. 449-451 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 後藤 欣哉: "SiGeチャネルMOSFETの製作" 電子情報通信学会技術報告. ED92-81. 19-21 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 室田 淳一: "CVDシリコンエピタキシー技術" 応用物理学会結晶工学分科会第19回講習会テキスト. 71-85 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Reiner Schutz: "Low-temperature Si/Si_<1-X>Ge_X/Si heterostructure growth at high Ge fractions by low-pressure chemical vapor cleposition" Applied Physics Letters. 61. 2674-2676 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Reiner Schutz: "Si/SiGe/Si heterostructure growth without interface roughness at high Ge-mole fractions by low-temperature low-pressure chemical vapour deposition" Thin Solid Fims. 222. 38-41 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Kinya Goto: "Electrical characteristics of B doped Ge films epitaxially grown on Si using ultraclean chemical vapor deposition" Material Science Forum. 117-118. 153-158 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Kinya Goto: "Fabrication of a Si_<1-X>Ge_X-channel metal-oxide-semiconductor fieldeffect transistor(MOSFET) containing high Ge fraction layer by low-pressvre chemical vapor deposition" Japanese Journal of Applied Physics. 32. 438-441 (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] Takahiro Maeda: "Growth of Si/Si_<1-X>Ge_X/Si heterostructure by low-temperature LPCVD" Proceedings of 12th International Conference on Chemical Vapor Deposition. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] Fumitaka Honma: "In-situ B doping of Si_<1-X>Ge_X film epitaxially grown on Si using ultraclean LPCVD" Proceedings of 12th International Conference on Chemical Vapor Deposition. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] Junichi Murota: "Si/Si_<1-X>Ge_X/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel devices" EURO CVD. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] Junichi Murota: "Low-temperature epitaxial growth of in-situ B doped Si_<1-X>Ge_X films" EURO CVD. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] Junichi Murota: "Low-temperature epitaxial growth of Si/SiGe/Si heterostructure by CVD (Invited)" Extended Abstrats of the 1993 International Conference on Solid state Devices and Materials. (1993)

    • Related Report
      1992 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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