| Project/Area Number |
04452170
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
IWAMOTO Mitsumasa Department of physical Electronics, Associate Professor, 工学部, 助教授 (40143664)
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| Co-Investigator(Kenkyū-buntansha) |
KUBOTA Tohru Department of Physical Electronics, Research Associate, 工学部, 助手 (00205139)
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| Project Period (FY) |
1992 – 1993
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| Project Status |
Completed (Fiscal Year 1993)
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| Budget Amount *help |
¥6,700,000 (Direct Cost: ¥6,700,000)
Fiscal Year 1993: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1992: ¥4,800,000 (Direct Cost: ¥4,800,000)
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| Keywords | Maxuell-displacenent current / Largmuir-Blodgel Films / Poly imaide / Organic Memory device / Tummling Conduction Current / Inelastic tunneling spectroscopy / Maxwell-displacetiont currpent measurement / Electrical property |
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| Research Abstract |
The purpose of this project was to examine the electrical and optical properties of organic single monolayrs on the basis of physics of dielectrics, and then to develop organic-monolayr memory devices using photoinduced displacement current across the monolayr. Photoisomerization of monolayr films containing Azo-dye prepared on a water surface was found to be detected by means of Maxwell-displacement-currentmeasuring-technique developed by the present investigators. The desplacement current was reversely generated across single monolayrs in opposite directions by alternately irradiation of visible and ultra-violet lights. This phenomenon was applied to the development of organic-monolayr memory devices using single monolayrs prepared on solid substrates. We then fabricated tunnel junction with polyimide Langmuir-Blodgett films. The electron transport mechanism through the films was examined by means of I-V and d^2V/dI^2-V measurements. It was found that electrons tunnel scross across the films without loss of their own energy. Based on this information, we fabricated monolayr devices using polymide as a tunneling barrier, and we also fabricated monolayr devices using polyimide with functional entities.
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