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RESEARCH ON NEW QUANTUM FUNCTIONAL MATERIALS BY SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURES

Research Project

Project/Area Number 04452174
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionNAGOYA UNIVERSITY

Principal Investigator

TAKEDA Yoshikazu  NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,PROFESSOR, 工学部, 教授 (20111932)

Co-Investigator(Kenkyū-buntansha) OYANAGI Hiroyuki  ELECTROTECHNICAL LABORATORY,EXOTIC MATERIALS RESEARCH LABORATORY,LABORATORY HEAD, 電気基礎部, 室長
TABUCHI Masao  NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,ASSISTANT PROF, 工学部, 助手 (90222124)
FIJIWARA Yasufumi  NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,ASSOCIATE PROF, 工学部, 助教授 (10181421)
Project Period (FY) 1992 – 1994
Project Status Completed (Fiscal Year 1994)
Budget Amount *help
¥6,400,000 (Direct Cost: ¥6,400,000)
Fiscal Year 1994: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1993: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1992: ¥3,400,000 (Direct Cost: ¥3,400,000)
KeywordsSENICONDUCTORS / INSULATORS / METALS / HYBRID STRUCTURES / QUANTUM FUNCTIONS / OMVPE / FLUORESCENCE EXAFS / INITIAL GROWTH PROCESS
Research Abstract

To realize such a hybrid structure as smiconductor/insulator/metal for a new quantum functional materials, conventional growth techniques are of no use. The hetero-interface must be controlled to one monolayr accuracy. We have developed a new reactor structure in OMVPE system with 4 barrells where intermixing of source gases are avoided and different gases are introduced to each barrell. Substrate travels rotationally or in a back-and forth mode. To test the basic capability of the new growth system, InP,GaAs, GaP,InGaAs and AlGap were grown and a high quality of each epitaxial layr was confirmed. Strained-layr superlattices of InP/InAs/InP where different group-V source gases are required to change without intermixing with each other were successfully grown.
Fluorescence-detected EXAFS for one monolayr, or less, of InAs in InP were successfully conducted with multiple SSDs and highly focused SOR X-rays, and local structures around As atoms in InP were revealed. The lattice relaxation processes were simulated by Valence-Force Field model and a very slow process was clarified.
X-ray CTR scattering technique was successfully applied to one momolyer or 1/10 of momolayr of InAs in InP and the profiles of As distributions in InP were clearly revealed to an atomic level accuracy. Exchange processes of the group-V stoms at the hetero-interfaces were investigated by this technique.

Report

(4 results)
  • 1994 Annual Research Report   Final Research Report Summary
  • 1993 Annual Research Report
  • 1992 Annual Research Report
  • Research Products

    (21 results)

All Other

All Publications (21 results)

  • [Publications] Y.Takeda et al.: "OMVPE-growth of III-V compounds and alloys using low-toxic group-V sources" Prcessing Materials for Properties. 1. 1133-1136 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 竹田 美和、藤原 康文: "TBP、TBAsを用いたOMVPE成長III-V族化合物半導体の特性に及ぼす水素流量の効果" 電子情報通信学会電子デバイス研究会技報. ED94-80. 7-13 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 竹田 美和、田渕 雅夫 他: "X線CTR散乱によるInP/InAsP/InP界面の構造解析" 電子情報通信学会電子デバイス研究会技報. ED94-84. 37-44 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Y.Takeda,Y.Fujiwara et al.: "Drastic effects of hydrogen flow rate on growth characteristics and electrical/optical..." J.Crystal Growth. 146. 544-548 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Tabuchi,Y.Takeda et al.: "Distribution of As atoms in InP/InPAs(1ML)/InP hetero-structures measured by X-ray CTR scattering" Proc.7th Inter.Conf.InP and Related Materials. (in press). (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Y.Takeda,M.Tabuchi et al.: "Group-V atoms exchange due to exposure of InP surface to AsH_3(+PH_3)measured by X-ray CTR..." Proc.7th Inter.Conf.InP and Related Materials. (in press). (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Y.Takeda, Y.Fujiwara et al.: "MVPE-growth of III-V compounds and alloys using low-toxic group-V sources" Processing Materials for Properties. Vol.1. 1133-1136 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Y.Takeda, Y.Fujiwara et al.: "Effects of hydrogen flow rate on characteristics III-V compounds semiconductors grown by OMVPE with TBP and TBAs" Technical Report of IEICE. ED94-80, CPM94-76. 7-13 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Tabuchi, Y.Takeda et al.: "Study on InPInPAs/InP interface structures by X-ray CTR scattering" Technical Report of IEICE. ED94-84, CPM94-80. 37-44 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Y.Takeda, Y.Fujiwara et al.: "Drastic effects of hydrogen flow rate on growth characteristics and electrical/optical properties of InP grown by organometallic vapor phase epitaxy with TMIn and TBP" J.Cryst.Growth. Vol.146. 544-548 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Tabuchi, Y.Takeda et al.: "Lattice accommodation in heteroepitaxial semiconductor layrs grown beyond critical thickness" J.Appl.Phys.Vol.77. 143-145 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Tabuchi, Y.Takeda et al.: "Distribution of As atoms in InP/InPAs (1ML) /InP hetero-structures measured by X-ray CTR scattering" Proc.7th Inter.Conf.InP and Related Materials. (in press). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Y.Takeda, M.Tabuchi et al.: "Group-V atoms exchange due to exposure of InP surface to AsH_3 (+PH_3) measured by X-ray CTR scattering" Proc.7th Inter.Conf.InP and Related Materials. (in press). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Y.Takeda: "OMVPE-growth of III-V compounds and alloys using low-toxic group-V sources" Processing Materials for Properties. 1. 1133-1136 (1993)

    • Related Report
      1994 Annual Research Report
  • [Publications] 竹田美和: "TBP、TBAsを用いたOMVPE成長III-V族化合物半導体の特性に及ぼす水素流量の効果" 電子情報通信学会電子デバイス研究会技法. ED94-80. 7-13 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 竹田美和: "X線CTR散乱によるInP/InAsP/InP界面の構造解析" 電子情報通信学会技報、電子デバイス研究会. ED94-84. 37-44 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Y.Takeda: "Drastic effects of hydrogen flow rate on growth characteristics and electrical/optical properties of InP grown by MOVPE with TMIn and TBP" J.Crystal Growth. 146. 544-548 (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] M.Tabuchi: "Distribution of As atoms in InP/InPAS(1ML)/InP hetero-structures measured by X-ray CTR scattering" Proc.7th Inter.Conf.InP and Related Materials. (in press). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] Y.Takeda: "Group-V atoms exchange due to exposure of InP surface to AsH_3(+PH_3)measured by X-ray CTR scattering" Proc.7th Inter.Conf.InP and Related Materials. (in press). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] Y.Takeda: "OMVPE-growth of III-V compounds and alloys using low-toxic group-V sources" Processing Materials for Properties. 1. 133-136 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Tabuchi: "EXAFS-observation of lattice accomodation in heteroepitaxial semiconductor layers grown beyond critical thickness" The 3rd IUMRS Inter.Conf.Advenced Materials. (in press). (1994)

    • Related Report
      1993 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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