| Project/Area Number |
04452199
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子機器工学
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| Research Institution | TOHOKU UNIVERSITY |
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Principal Investigator |
YOKOO Kuniyoshi Res.Inst.Elec.Comm. Professor, 電気通信研究所, 教授 (60005428)
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| Co-Investigator(Kenkyū-buntansha) |
SHIMAWAKI Hidetaka Res.Inst.Elec.Comm. Research Associate, 電気通信研究所, 助手 (80241587)
SATO Nobuyuki Res.Inst.Elec.Comm. Research Associate, 電気通信研究所, 助手 (10178759)
MUROTA Junichi Res.Inst.Elec.Comm. Associate Professor, 電気通信研究所, 助教授 (70182144)
ONO Shoichi Res.Inst.Elec.Comm. Professor, 電気通信研究所, 教授 (00005232)
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| Project Period (FY) |
1992 – 1993
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| Project Status |
Completed (Fiscal Year 1993)
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| Budget Amount *help |
¥6,600,000 (Direct Cost: ¥6,600,000)
Fiscal Year 1993: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1992: ¥5,000,000 (Direct Cost: ¥5,000,000)
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| Keywords | Tunnel effect / Field emission / Cold cathode / Vacuum microelectronics / MOS devices |
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| Research Abstract |
An electron tunneling emission cathode has the potential for high current density and pressure insensitive of emission current and is a flat cathode in contrast with a field emission cathod. Due to these advantages, the tunneling cathode is a powerful candidate as a fine cathode for vacuum microelectronic devices.
We have fabricated an Al-gate and an amorphous Si-gate MOS electron tunneling cathodes and have examined the emission characteristics. The emission current was given by the Fowler and Nordheim equation and the transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode was 0.7%. The emission current was very stable in the Si-gate MOS cathode, in contrast with the Al-gate cathode. In addition, the current was nearly independent of pressure ranging from 10^<-8> to 10^<-1> Torr.
Energy distribution of emitted electrons were measured by a high resolution electron energy analyzier developed in this study. It became clear that the emission characteristics of the MOS electron tunneling cathode were mainly determined by scattering process of hot electrons in the conduction band of the oxide in MOS cathode. Following the experimental results, a new structure of tunneling cathode constructed with 4 thin layrs was proposed to improve emission characteristics of an electron tunneling cathode.
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