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Study on epitaxial metal/insulator multilayr structure formation

Research Project

Project/Area Number 04452202
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子機器工学
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

YAMADA Isao  Kyoto Univ., Ion Beam Eng.Exp.Lab., Professor, 工学部, 教授 (00026048)

Co-Investigator(Kenkyū-buntansha) MATSUO Jirou  Ion Beam Eng.Exp.Lab.Res.Assoc., 工学部, 助手 (40263123)
TAKAOKA Gikan  Ion Beam Eng.Exp.Lab.Assoc.Prof., 工学部, 助教授 (90135525)
Project Period (FY) 1992 – 1994
Project Status Completed (Fiscal Year 1994)
Budget Amount *help
¥4,900,000 (Direct Cost: ¥4,900,000)
Fiscal Year 1994: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1993: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1992: ¥3,400,000 (Direct Cost: ¥3,400,000)
KeywordsICB / epitaxial growth / on-line vacuum process / Al / Al_2O_3 multilayr structure / quantum effect device / resonant tunnel device / tunnel current / Al / Al_2O_3積層構造 / エピタキシー / 積層構造 / 共鳴トンネルダイオード / 超薄膜 / 低温成長 / ICB法 / 反応性ICB法 / 走査トンネル顕微鏡 / トンネルデバイス
Research Abstract

Ionized cluster beam (ICB) method has been used to form thin films of metals, insulators and so on which have unique characteritics when compared to films formed using other techniques. The ICB method has also been applied to low temperature growth of epitaxial films on substrates having a large lattice mismatch.
Al/Al_2O_3 multilayr structures are suitable candidates for high speed quantum effect devices, because of the large band offset at the interface, high carrier density of the metal and high breakdown field in the insulator. We have grown epitaxial Al/Al_2O_3 multilayr structure on Si(111) substrates by ICB method. The surface state and crystallinity were studied by STM,TEM and RHEED.It was found that the epitaxial growth of Al on Al_2O_3 and of Al_2O_3 on Al was achieved, and that the interface between Al and Al_2O_3 layrs was flat. In addition, we have succeeded to fabricate triple barrier resonant tunneling diodes using epitaxial Al/Al_2O_3 multilayr structures on Si(111) substrates and observed negative differential resistance. The resonant voltage was 1.22 V and the peak-valley ratio was 1.003. The value of resonant voltage agreed with the calculated value using Trasfer Matrix Method. The epitaxial Al/Al_2O_3 multilayr structure can be expected to be applied to quantum effect devices.

Report

(4 results)
  • 1994 Annual Research Report   Final Research Report Summary
  • 1993 Annual Research Report
  • 1992 Annual Research Report
  • Research Products

    (64 results)

All Other

All Publications (64 results)

  • [Publications] G.H.Takaoka: "Irradiation Effects of Ar-Cluster Ion Beams on Si Surfaces" Materials Research Society Symposium Proceedings. 316. 1005-1010 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Z.Insepov: "Molecular Dynamics Simulation of the Effects of Energetic Cluster Ion Impact on Solid Surface" Materials Research Society Symposium Proceedings. 316. 999-1004 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Fukushima: "Low Temperature Epitaxial Growth of TiO_2 Rutile Films by ICB Deposition and Mechanical Properties in Helium Implanted Rutile Films" Materials Research Society Symposium Proceedings. 316. 905-910 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] P.R.Besser: "Mechanical Behavior of Single Crystal A1(111) and Bicrystal A1(110) Films on Silicon Substrates" Materials Research Society Symposium Proceedings. 343. 659-664 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] G.H.Takaoka: "Ionized Cluster Beam Techniques for Film Formation" Proceeding of Advanced Materials ′93, IV/Laser and Ion Beam Modification of Materials. 17. 125-131 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Fukushima: "Low Temperature Growth of Epitaxial and Highly Oriented TiO_2 Rutile Films by ICB" Proceeding of Advanced Materials ′93, IV/Laser and Ion Beam Modification of Materials. 17. 271-274 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Akedo: "Epitaxial Growth of Metal-Insulator-Metal Structures on Si(111) Substrates" Proceedings of Advanced Materials ′93, IV/Laser and Ion Beam Modification of Materials. 17. 247-250 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] N.Sakuma: "Epitaxial A1 Films Grown on Heavily Doped Si(100) Surfaces by ICB Methods for Fabricating ULSI Contacts" Proceeding of Advanced Materials ′93, IV/Laser and Ion Beam Modification of Materials. 17. 255-258 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] T.Yamawaki: "STM Observations of the Initial Growth Processes of Metal Thin Film" Proceedings of Advanced Materials ′93, IV/Laser and Ion Beam Modification of Materials. 17. 263-266 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] D.Takeuchi: "Characteristics of Polyimide Prepared by Ion Beam Assisted Vapor Deposition" Proceedings of Advanced Materials ′93,IV/Laser and Ion Beam Modification of Materials. 17. 251-254 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Ishii: "Irradiation Effects of Gas-Cluster Ar Ion Beams on Solid Surfaces" Proceedings of Advanced Materials ′93, IV/Laser and Ion Beam Modification of Materials. 17. 119-122 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 高岡義寛: "ICBによるエピタキシャルA1/A1_2O_3積層構造の形成と応用" 真空. 37. 923-928 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] I.Yamada: "Cluster Ion Beam Processing of Materials" Abstracts of International Conference on Ion Implantation Technology ′94. (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] C.Ascheron: "Hardening and Increased Adhesion of TiO_2 Surface Layers by Nitrogen Implantation" Abstracts of International Conference on Ion Implantation Technology ′94. (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] I.Yamada: "Ionized Cluster Beam Technique : A New Process for Deposition,Sputtering and Implantation" Abstracts of 7th International Symposium on Small Particles and Inorganic Clusters. 96- (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] G.H.Takaoka: "Fundamental Aspects of the Ionized Cluster Beam Deposition Process" Abstracts of 7th International Symposium on Small Particles and Inorganic Clusters. 280- (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] I.Yamada: "Nano-Space Laboratory and Materials Development" Extended Abstracts of 3rd Asia-Pacific Workshop on Intelligent Materials & 4th Symposium on Intelligent Materials23GE17:1995. 112-114

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Ishida: "Fabrication of Resonaut Tunneling Devices Using Epitaxial A1/A1_2O_3" Extended Abstracts of 3rd Asia-Pacific Workshop on Intelligent Materials & 4th Symposium on Intelligent Materials. 118-120 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] G.H.Takaoka: "Irradiation Effects of Ar-Cluster ion Beams on Si Surfaces" Mat.Res.Soc.Symp.Proc.316. 1005-1010 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Z.Insepov: "Molecular Dynamics Simulation of the Effects of Energetic Cluster Ion Impact on Solid Surface" Mat.Res.Soc.Symp.Proc.316. 999-1004 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Fukushima: "Low Temperature Epitaxial Growth of TiO_2 Rutile Films by ICB Deposition and Mechanical Properties in Helium Implanted Rutile Films" Mat.Res.Soc.Symp.Proc.316. 905-910 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] P.R.Besser: "Mechanical Behavior of Single Crystal Al (111) and Bicrystal Al (110) Films on Silicon Substrates" Mat.Res.Soc.Symp.Proc.343. 659-664 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] G.H.Takaoka: "Ionized Cluster Beam Techniques for Film Formation" Proc.Adv.Mat. '93, IV/Laser and Ion Beam Mod.Mat.17. 125-131 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Fukushima: "Low Temperature Growth of Epitaxial and Highly Oriented TiO_2 Rutile Films by ICB" Proc.Adv.Mat. '93, IV/Laser and Ion Beam Mod.Mat.17. 271-274 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Akedo: "Epitaxial Growth of Metal-Insulator-Metal Structures on Si (111) Substrates" Proc.Adv.Mat. '93, IV/Laser and Ion Beam Mod.Mat.17. 247-250 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] N.Sakuma: "Epitaxial Al Films Grown on Heavily Doped Si (100) Surfaces by ICB Methods for Fabricating ULSI Contacts" Proc.Adv.Mat. '93 IV/Laser and Ion Beam Mod.Mat.17. 255-258 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] T.Yamawaki: "STM Observations of the Initial Growth Processes of Metal Thin Film" Proc.Adv.Mat. '93, IV/Laser and Ion Beam Mod.Mat.17. 263-266 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] D.Takeuchi: "Characteristics of Polyimide Prepared by Ion Beam Assisted vapor Deposition" Proc.Adv.Mat. '93, IV/Laser and Ion Beam Mod.Mat.17. 251-254 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Ishii: "Irradiation Effects of Gas-Cluster Ar Ion Beams on Solid Surfaces" Proc.Adv.Mat. '93, IV/Laser and Ion Beam Mod.Mat.17. 119-122 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] G.H.Takaoka: "The Formation of Epitaxial Al/Al_2O_3 Multilayr Structure by ICB and Its Application" Vacuum. 37 (11). 923-928 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] I.Yamada: ""Cluster Ion Beam Processing of Materials"" Abstracts of IIT '94. O-2. 4 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] C.Ascheron: ""Hardening and Increased Adhesion of TiO_2 Surface Layrs by Nitrogen Implantation"" Abstracts of IIT '94. P-3. 83 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] I.Yamada: ""Ionized Cluster Beam Technique : A New Process for Deposition, Sputtering and Implantation"" Abstracts of ISSPIC. 7. 96 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] G.H.Takaoka: ""Fundamental Aspects of the Ionized Cluster Beam Deposition Process"" Abstracts of ISSPIC. 7. 280 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] I.Yamada: ""Nano-Space Laboratory and Materials Development"" Abstracts of 3rd Asia-Pacific Workshop & 4th Symp.on Intelligent Materials. 112-114 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Ishida: ""Fabrication Of Resonant Tunneling Devices Using Epitaxial Al/Al_2O_3" Abstracts of 3rd Asia-Pacific Workshop & 4th Symp.on Intelligent Materials. 118-120 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] I.Yamada: "Irradiation Effects of Ar-Cluster Ion Beams on Si Surfaces." Materials Research Society Symposium Proceedings. 316. 1005-1010 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada: "Molecular Dynamics Simulation of the Effects of Energetic Cluster Ion Impact on Solid Surface" Materials Research Society Symposium Proceedings. 316. 999-1004 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada: "Low Temperature Epitaxial Growth of Tio_2 Rutile Films by ICB Deposition and Mechanical Properties in Helium Implanted" Materials Research Society Symposium Proceedings. 316. 905-910 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada: "Mechanical Behavior of Single Crystal Al(111) and Bicrystal Al(110) Films on Silicon Substrates" Materials Research Society Symposium Proceedings. 343. 659-664 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada: "Ionized Cluster Beam Techniques for Film Formation" Proceeding of Advanced Materials 93 IV/Laser and Ion Beam Modification of Materials. 17. 125-131 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada: "Low Temperature Growth of Epitaxial and Highly Oriented Tio_2 Rutile Films by ICB" Proceeding of Advanced Materials 93 IV/Laser and Ion Beam Modification of Materials. 17. 271-274 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada: "Epitaxial Growth of Metal-Insulator-Metal Structures on Si(111) Substrates" Proceeding of Advanced Materials 93 IV/Laser and Ion Beam Modification of Materials. 17. 247-250 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada: "Epitaxial Al Films Grown on Heavily Doped Si(100) Surfaces by ICB Methods for Fabricating ULSI Contacts" Proceeding of Advanced Materials 93 IV/Laser and Ion Beam Modification of Materials. 17. 255-258 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada: "STM Observations of the Initial Growth Processes of Metal Thin Film" Proceeding of Advanced Materials 93 IV/Laser and Ion Beam Modification of Materials. 17. 263-266 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada: "Characteristics of Polyimide Prepared by Ion Beam Assisted Vapor Deposition" Proceeding of Advanced Materials 93 IV/Laser and Ion Beam Modification of Materials. 17. 251-254 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada: "Irradiation Effects of Gas-Cluster Ar Ion Beams on Solid Surfaces" Proceeding of Advanced Materials 93 IV/Laser and Ion Beam Modification of Materials. 17. 119-122 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 山田公: "ICBによるエピタキシャルAl/Al_2O_3積層構造の形成と応用" 真空. 37. 923-928 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] I.Yamada and G.H.Takaoka: "Ionized Cluster Beams:Physics and Technology" Japanese Journal of Applied Physics. 32. 2121-2141 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Fukushima,G.H.Takaoka and I.Yamada: "Epitaxial Growth of TiO_2 Rutile Thin Films on Sapphire Substrates by a Reactive Ionized Cluster Beam Method" Japanese Journal of Applied Physics. 32. 3561-3565 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] I.Yamada,W.L.Brown,J.A.Northby and M.Sosnowski: "Surface Modification with Gas Cluster Ion Beams" Nuclear Instruments and Methods in Physics Research. B37. 223-226 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] I.Yamada,G.H.Takaoka,M.Current,Y.Yamashita and M.Ishii: "Irradiation Effects of Gas-Cluster CO_2 Ion Beams on Si" Nuclear Instruments and Methods in Physics Research. B74. 341-346 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] N.Hirai,M.Sato,N.Sakuma,G.H.Takaoka and I.Yamada: "Epitaxial Growth of Metal-Insulator-Metal Structures on Si(111)Substrates" Proceedings of 3rd International Union of Materials Research Society International Conference. (印刷中). (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] T.Yamawaki,G.H.Takaoka and I.Yamada: "STM Observations of the Initial Growth Processes of Metal Thin Film" Proceedings of 3rd International Union of Materials Research Society International Conference. (印刷中). (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] I.Yamada: "Irradiation Effects of Gas-Cluster CO_2 Ion Beams on Si" To be published in Nuclear Instruments and Methods. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] J.A.Northby: "A Method and Apparatus for Surface Modification by Gas-Cluster Ion Impact" To be published in Nuclear Instruments and Methods. (1993)

    • Related Report
      1992 Annual Research Report
  • [Publications] I.Yamada: "Surface Modification and Other Advanced Ion Beam Processing Projects in Japan" Surface and Coatings Technology. 51. 514-521 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] I.Yamada: "Novel Paths for Nucleation and Growth of Thin Films by Ionized Cluster Beam(ICB) Technigues:Atomic-Scale Observation" Materials Research Society Symposium Proceedings. 235. 597-607 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] S.Wada: "Epitaxial Al(110) Films Grown on Heavily-Doped Si(100) by Cluster Beam Deposition" Materials Research Society Symposium Proceedings. 235. 621-626 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] G.H.Takaoka: "Surface Modification of Bio-Active Ceramic(Artificial Bone) by Ion Implantation" Materials Research Society Symposium Proceedings. 252. 23-28 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] I.Yamada: "Advanced Ion Beam Material Processing Projects in Japan" Materials Research Society Symposium Proceedings. 268. 261-272 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] G.H.Takaoka: "Surface and Interface Properties of Copper Phthalocyanine Multilayer Structure Propared by ICB Method" Proceedings of the First Meeting on the Ion Engineering Society of Japan. 251-254 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] Y.Yamashita: "Irradiation Effects of a Mass Analyzed Gas Cluster Ion Beam on Silicon Substrates" Proceedings of the First Meeting on the Ion Engineering Society of Japan. 247-250 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] I.Yamada: "Physics and Chemistry: From Clusters to Crystals" Kluwer Academic Publishers, (1992)

    • Related Report
      1992 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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