| Project/Area Number |
04555003
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
YAMADA Isao Kyoto Univ., Ion Beam Eng.Exp.Lab., Professor, 工学部, 教授 (00026048)
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| Co-Investigator(Kenkyū-buntansha) |
MATSUDA Kouji Nissin Elec.Co.Manager, 生産技術研究開発部, 主幹
YAMANISHI Kenichirou Mitsubishi Elec.Corp.Group Manager, 生産技術センター, グループマネージャー
TOMODA Toshimasa Mitsubishi Elec.Corp.Manager, 生産技術センター, 部長
MATSUO Jirou Kyoto Univ., Research Assoc., 工学部, 助手 (40263123)
TAKAOKA Gikan Kyoto Univ., Assoc.Prof., 工学部, 助教授 (90135525)
松永 幸二 日新電機株式会社, 研究開発本部, 課長
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| Project Period (FY) |
1992 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥14,300,000 (Direct Cost: ¥14,300,000)
Fiscal Year 1994: ¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 1993: ¥5,200,000 (Direct Cost: ¥5,200,000)
Fiscal Year 1992: ¥6,800,000 (Direct Cost: ¥6,800,000)
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| Keywords | gas cluster / high density irradiation effect / low energy ion beam / lateral sputtering / ion implantation / surface cleaning / film formation / LSI / イオンビーム / クラスターイオン / ラテラルスパッタ効果 / 多体衝突効果 / クラスターイオン注入 / クラスターイオンビーム技術 / ラバルノズル / フリージェットノズル / スパッタ / 高密度照射 / 極浅接合形成 |
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| Research Abstract |
We have developed gas cluster ion implantation apparatus, which has a high potential for (a) shallow implantaiton, (b) very flat surface formation, (c) low damage surface cleaning, (d) high rate sputtering and (e) formation of better quality thin film.
The effects of energetic Ar and CO_2 cluster on solid surfaces have been studied for different energies and sizes of cluster. The damaged layr by cluster ion irradiation was very small in comparison with the monomer ion irradiation, which is due to comparatively low energy of constituent atom of the cluster. In addition, the sputtering yield from metal, semiconductor and insulator films, using gas cluster ion, was larger by a few tens to hundreds times than that for the case of monomer ion because of the effect of high energy density irradiation. A very flat surface was obtained after irradiation of gas cluster, which indicates lateral sputtering at the surface.It was also possible to achieve the shallow implantation by adjusting the energy and size of cluster ion.Furthermore, computer simulation showed that when energetic cluster hit a solid surface, multiple collisions between cluster constituent atoms occurred and many unusual effects were observed.
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