• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Study OF Ultra-High Speed Heterojunction Bipolar Transistors with a Heavily Carbon-Doped Base

Research Project

Project/Area Number 04555066
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

KONAGAI Makoto  Tokyo Inst. Tech., Faculty of Eng.,, 工学部, 教授 (40111653)

Co-Investigator(Kenkyū-buntansha) MATSUMOTO Kazuhiko  Electrotechnical Lab ; Prof. Electron Device Division, Chief of Microstructure E, 電子デバイス部, 主席研究官
野崎 真次  東京工業大学, 工学部, 客員助教授 (20237837)
Project Period (FY) 1992 – 1994
Project Status Completed (Fiscal Year 1994)
Budget Amount *help
¥18,200,000 (Direct Cost: ¥18,200,000)
Fiscal Year 1994: ¥4,500,000 (Direct Cost: ¥4,500,000)
Fiscal Year 1993: ¥7,700,000 (Direct Cost: ¥7,700,000)
Fiscal Year 1992: ¥6,000,000 (Direct Cost: ¥6,000,000)
KeywordsMOMBE / Carbon / Carbon-doped baes HBT / Heavy doping / InGaP / Tertiarybutylphosphine / GaAs HBT / InP / InGaAs HBT / 超高濃度ドーピング / GaAs / InGaAs / ターシャリブチルフォスフィン / HBT / トリメチルガリウム / ネオペンタン
Research Abstract

Heterojunction bipolar transistors (HBTs) have attracted much attention as high-speed devices. In this research, it was strongly proposed that for further improved device performance of HBTs, reduction of base resistance is greatly important. In other words, heavily doped base layr with the well-confined base dopant is one of key structural parameters for realizing high-speed HBTs.From these points, effects of reduced base resistance on static and dynamic characteristics of InGaP/GaAs HBTs with an ultra-high doped base were studied by solving the basic device equations and the hybrid-pi type equivalent circuit model. By increasing the base hole concentration to 1.5x10^<21>cm^<-3>, current gains were estimated to be over 10 by assuming the minority carrier lifetime gamma_n of 10-100ps, and current-gain cutoff frequency f_T of 110 GHz and maximum oscillation frequency f_<max> of 160 GHz were predicted. Switching characteristics were also studied by using a SPICE simulator, and propagatio … More n delay time t_<pd> of l ps/gate was achieved in that device structures.
Based on this consideration, heavy impurity-doping technique is developed by using novel crystal growth technique : metalorganic molecular beam epitaxy (MOMBE) . Instead of conventional p-type dopants such as beryllium (Be) and zinc (Zn) for base layr in HBTs, carbon (C) is proposed as a novel base dopant because of excellent stability and capability of heavy doping. Heavily carbon-doped p-type GaAs and InGaAs were developed as base materials by MOMBE with trimethylgallium (TMG) , and carbon-doping characteristics and electrical, optical and structural properties were studied in detail. Furthermore, phosphide materials such as InGaP and InP are also proposed in this research as novel emitter materials of the HBTs because of the tendency of low surface recombination velocity, and MOMBE growth of these compounds is investigated with new metalorganic phosphorus precursor : tertiarybutylphosphine (TBP) .In the growth of high quality materials, the catalysis by means of heated tantalum (Ta) inside the cracking cell was important to effectively decompose the TBP as compared to simple pyrolysis. Controllability of Si-doping in In_<0.5>Ga_<0.5>P suitable for HBT application was also studied by using cracked Si_2H_6. In the growth of InP by MOMBE with TBP,it was revealed that carbon from the TBP is incorporated and acts as well-activated donor.
By combining these MOMBE growth techniques, InP/InGaAs HBTs with carbon-doped n-type InP emitter and carbon-doped p-type InGaAs base are proposed and fabricated for the first time in the world. In common-emitter static characteristics, relatively large commonemitter breakdown voltage BV_<CEO>above 6 V was achieved, and small signal current gain h_<fe> of 20 and d.c.current gain h_<FE> of 11 were obtained at collector current density J_C of 0.15kA/cm^2 for a device with emitter area A_E of 80*80mum^2.Furthermore, InGaP/GaAs HBTs having an ultrahigh carbon-doped base with a hole concentration of the order of 10^<21>cm^<-3> are realized for the first time. By using that device structure, improved high-frequency performance is strongly expected because base resistance could be extremely decreased due to the ultra-high doping in the base. In fact, h_<fe> of 16 and h_<FE> of 12 were obtained for devices with a base thickness of 15 nm. In the reliability measurements, a significant degradation of current gain was not observed in the range investigated, indicating a perfect stability of carbon as a p-type dopant. In conclusions, successful realization of HBTs with unique original structures ; Inp/InGaAs HBTs with carbon-doped InP emitter and carbondoped InGaAs base and InGap/GaAs HBTs with an ultra-high carbon-doped base (p=1.5*10^<21>cm^<-3>) , was studied for the first time. Less

Report

(4 results)
  • 1994 Annual Research Report   Final Research Report Summary
  • 1993 Annual Research Report
  • 1992 Annual Research Report
  • Research Products

    (36 results)

All Other

All Publications (36 results)

  • [Publications] E.Tokumitsu: "Heavily Carbon-Doped P-Type InGaAs by MOMBE" J.Crystal Growth. 120. 301-305 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S. Nozaki: "Study on Thermal Stability of Carbon-Doped GaAs Using NovelMetalorganic Molecular Beam Epitaxial Structures" Appl. Phys. Lett.62. 1913-1915 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J.Shirakashi: "Effect of the Addition of Elemental Ga Flux on the MOMBE Growth of Heavily Carbon-Doped InGaAs" J. Crystal Growth. 136. 186-190 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Nagao: "Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium" J. Appl. Phys.to be published

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J. Shirakashi: "Meralorganic Molecular Beam Epitaxial Growth of InP and InGaP with Tertiarybutylphosphine for the Application of Carbon-Doped Base Heterojunction Bipolar Transistors" J. Crystal Growth. 145. 935-940 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J.Shirakashi: "MOMBE Growth of InGaP with Tertiarybutylphosphine (TBP)" J. Appl. Phys. (to be published). (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J. Shirakashi: "Raman Scattering Spectroscopy of Heavily Carbon-Doped P-Type InGaAs Grown by MOMBE" J. Appl. Phys. (to be published). (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J. Shirakashi: "InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with an Ultra-High Carbon-Doped Base (p=1.5×10^<21>cm^<-3>)" J. Appl. Phys. (to be published). (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J. Shirakashi: "Characterization of Heavily Carbon-Doped GaAs with a Hole Concentration of the Order of 10^<21>cm^<-3>Growth by MOMBE and Its Application to InGaP/GaAs HBTs" J. Crystal Growth. (to be published). (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J. Shirakashi: "InGaP/GaAs and InP/InGaAs Heterojunction Bipolar Transistors with a Super Heavily Carbon-Doped Base Grown by Metalorganic Molecular Beam Epitaxy" Solid-State Electron. (to be published). (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J. -H. Oh: "Metalorganic Molcular Beam Epitaxy of Heavily Carbon-Doped InP using Tertiarybutylphosphine as a Carbon Auto-Doping Source" Appl. Phys. Lett.(to be published). (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] E.Tokumitsu: "Heavily Carbon-Doped P-Type InGaAs by MOMBE" J.Crystal Growth. 120. 301-305 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nozaki: "Study on Thermal Stability of Carbon-Doped GaAs Using Novel Metaloganic Molecular BEAM Epitaxial Structures" Appl.Phys.Lett. 62. 1913-1915 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J.Shirakashi: "Effect ot the Addition of Elemental Ga Flux on the MOMBE Growth of Heavily Carbon-Doped InGap" J.Crystal Growth. 136. 186-190 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Nagao: "Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium" Appl.Phys. (to be published). (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J.Shirakashi: "Metalorganic Molecular Beam Epitaxial Growth of InP and InGap with Tertiarybutylphosphine for the Application of Carbon-Doped Base Heterojunction Bipolar Transistors" J.Crystal Growth. 145. 935-940 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J.Shirakashi: "MOMBE Growth of InGaP with Tertiarybutylphosphine (TBP)" Appl.Phys.(to be published). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J.Shirakashi: "Raman Scattering Spectroscopy of Heavily Carbon-Doped P-type InGaAs Grown by MOMBE" J.Appl.Phys. (to be published). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J.Shirakashi: "InGap/GaAs Heterojunction Bipolar Transistors (HBTs) with an Ultra-High Carbon-Doped Base (p=1.5*10^<21>cm^<-3>)" J.Appl.Phys. (to be published). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J.Shirakashi: "Characterization of Heavily Carbon-Doped GaAs with a Hole Concentration of the Order of 10^<21>cm^<-3> Growth by MOMBE and Its Application to InGaP/GaAs HBTs" J.Crystal Growth. (to be published). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J.Shirakashi: "InGaP/GaAs Heterojunction Bipolar Transistors with a Super-High Carbon-Doped Base Grown by Metalorganic Molecular Beam Epitaxy" Solid-State Electron. (to be published). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] J.-H.Oh: "Metalorganic Molecular Beam Epitaxy of Heavily Carbon-Doped InP using Tertiarybutyphosphine as a Carbon Auto-Doping Source" Appl.Phys.Lett. (to be published). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] K.Nagano: "Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium" Jpn.J.Appl.Phys.in press (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] J.Shirakashi: "Metalorganic Molecular Beam Epitaxial Growth of InP and InGaP with Tertiarybutylphosphine for the Application of Carbon-Doped Base Heterojunction Bipolar Transistors" J.Crystal Growth. (in press). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] J.Shirakashi: "InGaP/GaAs Heterojunction Bipolar Transistors(HBTs)with an Ultra-High Carbon-Doped Base(p=1.5×10^<21>cm^<-3>)" Jpn.J.Appl.Phys.(in press). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] J.Shirakashi: "Characterizaion of Heavily Carbon-Doped GaAs with a Hole Concentraion of the Orber of 10^<21>cm^<-3>Grown by MOMBE and Its Application to InGaP/GaAs HBTs" J.Crystal Growth. (in press). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] J.Shirakashi: "InGaP/GaAs and InP/InGaAs Heterojunction Bipolar Transistors with a Super Heavily Carbon-Doped Base Grown by Metalorganic Molecular Beam Epitaxy" Solid-state Electron.(in press). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] J.Shirakashi: "Effect of the addition of an elemental Ga flux on the MOMBE growth of heavily carbon-doped InGaAs" J.Crystal Growth. (印刷中). (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] R.T.Yoshioka: "Effect of the Ga-flux addition on MOMBE growth of carbon-doped p-type InGaAs and GaAs" 12th Record of Alloy Semiconductor Physics and Electronics Symposium. (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] J.Shirakashi: "MOMBE growth of InGaP with tertiarybutylphosphine(TBP) and its application to the carbon-doped base InGaP/GaAs HBTs" 6th International Conference on Indium Phosphide and Related materials. (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] E.Tokumitsu: "Heavily carbon-doped p-type InGaAs by MOMBE" J.Crystal Growth. 120. 301-305 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] J.Shirakashi: "Raman study of heavily carbon-doped p-type InGaAs grown by MOMBE" 11th Record of Alloy Semiconductor Physics and Electronics Symposium. 53-58 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] J.Shirakashi: "Enhanced carbon incorporation in InGaAs grown at low temperature by metalorganic molecular beam epitaxy (MOMBE)" Extended Abst.of Internationnal Conf.on SSDM. 705-706 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] E.Tokumitsu: "Free carrier saturation in III-V compound semiconductros:amphoteric native defect model vs.DX center model" 5th international Conf.on Shallow Impurities in Semiconductors. (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] M.Shirahama: "Growth of carbon-doped GaAs by MBE using neopentane as a novel carbon source" 19th International Symposium on GaAs and related compounds. (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] E.Tokumitsu: "Anomalous enhancement of Be diffusion in heavily carbon-doped GaAs" 19th International Symposium on GaAs and related compounds. (1992)

    • Related Report
      1992 Annual Research Report

URL: 

Published: 1992-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi