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Development of selective deposition technique of sillicon dioxideinto extremely fine patterned structure and its application to G-bit memory wiring

Research Project

Project/Area Number 04555071
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

HIROSE Masataka  Hiroshima Univ., Dept. of Elec.Eng., Prof., 工学部, 教授 (10034406)

Co-Investigator(Kenkyū-buntansha) KOTANI Hideo  Mitsubishi Elec.Corp., LSI lab., group manager, 三菱LSI研究所, プロジェクトリーダー
HAYASHI Toshio  ULVAC Corp., Eproject, project leader, Eプロジェクト, グループマネージャー
MIYAZAKI Seiichi  Hiroshima Univ., Dept.of Elec.Eng., Associate Prof., 工学部, 助教授 (70190759)
Project Period (FY) 1992 – 1994
Project Status Completed (Fiscal Year 1994)
Budget Amount *help
¥13,600,000 (Direct Cost: ¥13,600,000)
Fiscal Year 1994: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1993: ¥5,200,000 (Direct Cost: ¥5,200,000)
Fiscal Year 1992: ¥6,800,000 (Direct Cost: ¥6,800,000)
KeywordsPlasma CVD / Silicon dioxide / FT-IR-ATR / Real time monitoring / Planarization technique / Selective growth technique / シリコン薄膜
Research Abstract

A novel CVD technique of silicon dioxide with a very high fluidity has been developed for planarizing extremely fine patterned surfaces with narrow grooves or deep trenches. Silicon dioxide has been deposited by the glow discharge decomposition of SiH_4 and O_2 at substrate temperatures below-80゚C,where the thermal reaction on the surface was basically suppressed. When ion flux onto the growth surface was significantly reduced by employing a triode-type reactor, oxide deposition onto surfaces with narrow features proceeds from the bottom of a trench or groove and result in planarization of the topography. High-fluidity deposition of silicon dioxide was also achieved by employing a Si_2H_6 and O_2 plasma or a high partial pressure SiH_4 discharge generated in a diode-type reactor. It is shown that the polymerization reaction is promoted on the surface to form higher silane radicals with migration capability despite the ion irradiation to the growth film surface. This is presumably because the life time of polymerized species is controlled the condensation rate of higher silanes and ion-induced ablation/decomposition rate of surface products. Real time monitoring of surface reactions during deposition from siH_4 and O_2 plasma was performed by employing a newly developed FT-IR-ATR system. At temperature of -95゚C,polymerization reactions among adsorbates proceeds on the surface to form polysiloxene (O-SiH_2)_n chains partially terminated with SiH_3 or OH.

Report

(4 results)
  • 1994 Annual Research Report   Final Research Report Summary
  • 1993 Annual Research Report
  • 1992 Annual Research Report
  • Research Products

    (27 results)

All Other

All Publications (27 results)

  • [Publications] M.Hirose: "A New Horizon of Plasma Enhanced CVD for Future Electron Devices" Extended Abstract of the 1992 Intern. Conf. on Solid State Devices and Materials. 13-16 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Hirose: "Science and Technology for Advanced ULSI Processes-Present and Future in Japan" Proc. of Third Intern. Conf. on Solid State and Integrated Circuit Technology. 14-17 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Shin: "High-Fluidity Chemical Vapor Deposition of Silicon Dioxide" Appl. Phys. Lett.60. 2616-2618 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Shin: "Effect of Substrate Bias on Silicon Thin Film Growth in Plasma Enhanced CVD at Cryogenic Temperature" Jpn. J. Appl. Phys.31. 1953-1957 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Shin: "High-Fluidity Deposition of Si by Plasma Enhanced CVD of Si_2H_6" Proc. of 14th Annual Symp.on Dry Process. 181-185 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Shin: "High-Fluidity Deposition of Silicon by Plasma-Enhanced Chemical Vapor Deposition Using Si_2H_6 or SiH_4" Jpn. J. Appl. Phys.32. 3081-3084 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Miyazaki: "Real Time Monitoring of Surface Reactions during Plasma Enhanced CVD of Silicon" Extended Abstracts of the 1994 Intern. Conf. on Solid State Devices and Materials. 724-726 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 広瀬 全孝: "高流動性プラズマCVDによる薄膜形成" 応用物理. 63. 1118-1122 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Miyazaki: "Real Time Monitoring of Surface Reactions during Plasma Enhanced CVD of Silicon" Jpn. J. Appl. Phys.34. 787-790 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Hirose: ""A New Horizon of Plasma Enhanced CVD for FutureElectron Devices"" Extended Abstract of the 1992 Intern.Conf. On Solid State Devices and Materials. 13-16 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Hirose: ""Science and Technology for Advanced ULSI Processes-Present and Future in Japan"" Proc.of Third Lntern.Conf.on Solid State and Integrated Circuit Technology. 14-17 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Shin: ""High-Fluidity Chemical Vapor Deposition of Silicon Dioxide"" Appl.Phys.Lett. Vol.60 No.21. 2616-2618 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Shin: ""Effect of Substrate Bias on Silicon Thin Film Growth in Plasma Enhanced CVD at Cryogenic Temperature"" Jpn.J.Appl.Phys. Vol.31 No.6B. 1953-1957 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Shin: ""High-Fluidity Deposition of Si by Plasma Enhanced CVD of Si_2H_6"" Proc.of 14th Annual Symp.on Dry Process. 181-185 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Shin: ""High-Fluidity Deposition of Silicon by Plasma-Enhanced Chemical Vapor Deposition Using Si_2H_6 or SiH_4"" Jpn.J.Appl.Phys. Vol.32 No.6B. 3081-3084 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Miyazaki: ""Real Time Monitoring of Surface Reactions during Plasma Enhanced CVD of Silicon"" Extended Abstracts of the 1994 Intern.Conf.on Solid State Devices and Materials. 724-726 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Miyazaki: ""Real Time Monitoring of Surface Reactions during Plasma Enhanced CVD of Silicon"" Jpn.J.Appl.Phys. Vol.34. 787-790 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Miyazaki: "Real Time Monitoring of Surface Reactions during Plasma Enhanced CVD of Silicon" Extended Abstracts of the 1994 Intern.Conf.on Solid State Devices and Materials. 724-726 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 広瀬全孝: "高流動性プラズマCVDによる薄膜形成" 応用物理. 63. 1118-1122 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Miyazaki: "Real Time Monitoring of Surface Reactions during Plasma Enhanced CVD of Silicon" Japanese Journal of Applied Physics. 34(to be published). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] H.Shin: "High-Fluidity Deposition of Silicon by Plasma-Enhancsd Chemical Vapor Deposition Using Si_2H_6 or SiH_4" Japanese Journal of Applied Physics. 32. 3081-3084 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Hirose: "Resent Progress and Future Prospect in ULSI Process Technology" Proc.of Intern.Conf.on Solid State Science and Technology.(1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] M.Hirose: "A New Horizon of Plasma Enhanced CVD for Future Electron Devices" Extended Abstracts of the 1992 Intern.Conf.on Solid State Devices and Materials. 13-16 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] M.Hirose: "Science and Technology for Advanced ULSI Processes-Present and Future in Japan" Proc.of Third Intern.Conf.on Solid State and Integrated Circuit Technology. 14-17 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.Shin: "High-Fluidity Chemical Vapor Deposition of Silicon Dioxide" Appl.Phys.Lett.2616-2618 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.Shin: "Effect of Substrate Bias on Silicon Thin Film Growth in Plasma Enhanced CVD at Cryogenic Temperatures" Jpn.J.Appl.Phys.31. 1953-1957 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.Shin: "High-Fluidity Deposition of Si by Plasma Enhanced CVD of Si_2H_6" Proc.of Symp.on Dry Process. 181-185 (1992)

    • Related Report
      1992 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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