| Project/Area Number |
04555192
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
工業物理化学・複合材料
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| Research Institution | The University of Tokyo |
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Principal Investigator |
HASHIMOTO Kazuhito Faculty of Engineering, University of Tokyo : Associate Professor, 工学部, 助教授 (00172859)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAMOTO Kyonosuke Tsukuba Research Institute, Mitsubishi Paper Mills Limited : Chief Researcher, 筑波研究所, 主任研究員
HYODO Kenji Tsukuba Research Institute, Mitsubishi Paper Mills Limited : Chief Researcher, 筑波研究所, 主任研究員
BABA Ryo Faculty of Engineering, University of Tokyo : Assistant, 工学部, 助手 (70198951)
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| Project Period (FY) |
1992 – 1993
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| Project Status |
Completed (Fiscal Year 1993)
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| Budget Amount *help |
¥10,500,000 (Direct Cost: ¥10,500,000)
Fiscal Year 1993: ¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 1992: ¥7,700,000 (Direct Cost: ¥7,700,000)
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| Keywords | photo CVD / II-VI semiconductor thin film / surface reaction / laser light / fine pattern / 超格子膜 |
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| Research Abstract |
TiO_2 thin films were deposited by pulsed beam chemical vapor deposition from titanium tetraisopropoxide and H_2O vapors. Each reactant gas was introduced to a chamber alternately using commercial automobile electric fuel injectors as a beam souece. These thin films, deposited at various substrate temperatures, were characterized by optical absorption spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. Their properties were compared with those of TiO_2 films deposited by electron beam evaporation.
Al doped and Al-In co-doped ZnS thin film electrodes were grown by electron-beam evaporation on ITO (indium-tin oxide) glass substrate, and their photoelectrochemical properties were investigated. These thin films were also characterized by optical absorption, X-ray diffraction (XRD) and X-ray photoelectron spectrum (XPS) measurements. The doping of the ZnS film with Al alone did not result in a satisfactory n-type semiconductor. For Al-In co-doped ZnS thin films prepared by the thermal diffusion of a thin In layr which was deposited previously on the ITO-glass substrate, however, the barrier resistance between ITO and ZnS was lowered, and a clear n-type semiconductor characteristic was observed. The efficiencies of both the photocurrent and photocorrosion of ZnS in an aqueous electrolyte were increased with higher Al concentration.
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