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PREPARATION OF SUPER PLASTICITY TITANIA BY CHEMICAL VAPOR DEPOSITION

Research Project

Project/Area Number 04555228
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 反応工学
Research InstitutionTHE UNIVERSITY OF TOKYO

Principal Investigator

KOMIYAMA Hiroshi  THE UNIVERSITY OF TOKYO, DEPARTMENT OF CHEMICAL ENGINEERING, PROFESSOR, 工学部, 教授 (80011188)

Co-Investigator(Kenkyū-buntansha) HUKUDA Nobuhiro  MITSUI TOATSU CHEMICALS, INC., RESEARCH INSTITUTE, SENIOR RESEARCHER, 総合研究所, 主任研究員
Project Period (FY) 1992 – 1993
Project Status Completed (Fiscal Year 1993)
Budget Amount *help
¥7,100,000 (Direct Cost: ¥7,100,000)
Fiscal Year 1993: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1992: ¥5,000,000 (Direct Cost: ¥5,000,000)
KeywordsSuperplasticity / Titania / Chemical Vapor Deposition / Nanoceramics / ケミカル・ベイパー・デポジション法 / ケミカル・ベーパー・デポジション / ナノ構造材料
Research Abstract

It has been shown theoretically and experimentally that ceramic consisted of nanometer size grains (so-called nano-ceramic materials) overcame the characteristics of brittle which is the main drawback of the normal ceramics materials, and had high toughness. There has been a high expectation of its application for superior heat resistance and corrosion resistance, however, ceramic materials have not been put into practical materials because of the lower reliability as brittleness. We have been trying to do fundamental studies to create a novel mass-productive technology to make such nano-ceramic materials.
The film growth of titania (TiO_2) series nano-ceramic material was tried by chemical vapor deposition (CVD) method in this research. Titanium tetra iso-propoxide (TTIP) is used in the conventional TiO_2-CVD process, however we found that replacement of TTIP with bis(dipivaloylmetanoto) diisopropoxide titanium (Ti(DPM)_2(O-iPr)_2) compound increases stability of reaction and controlla … More bility.
In the second year, the new component materials such as Sr and Pb was added and its effect was examined. Our experimental results revealed that the added Pb compound reduced the secondary nucleation process. The recent greatest important issue is to control the grain size of the deposited film, it's also the aim of this research. It's said generally that the grain size of the deposited film was dominated the competition of the secondary nucleation rate and the film growth rate. However, these two rates were changed easily by various experimental conditions, so the control of the grain size has very difficulty. In the film forming process without secondary nucleation, it's known that the initial nucleation density as well as film thickness can dominate the grain size of the film. It's also shown that the fixed experimental condition which gives the most suitable initial nucleation density, and freely selectable deposition time provide us the controllability of the grain size. In conclusion, we have elucidated the novel way to control the grain size of the deposited films in CVD ceramics process. Less

Report

(3 results)
  • 1993 Annual Research Report   Final Research Report Summary
  • 1992 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] 金 煕濱: "常圧熱CVDによるAlN膜合成における配向性の制御" 化学工学論文集. 18. 622-628 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.J.Kim: "Molecular size and its temperature Dependence of Growth Species in Chemical Vapor Deposition of Aluminum Nitride." J.of Chem.Vap.Dep.1. 20-41 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] L.-S.Hong: "Sticking Probability of the Film Precarsor in Epitaxial Growth of SiC Films by the mical Vapor Deposition from SiH_4 and C_3H_8." Proc.of the 12th International Symp.on CVD. 401-407 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Saito: "Existence of Extinction Temperature in Wsix Films Growth from WF_6 and SiH_4:An Indication of the Role Played by Radical Chain Reactions" Appl.Phys.Lett.62. 1606-1608 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] M.Ihara: "Low Temperature Deposition of Diamond in a Temperature Range from 70℃ to 700℃" Diamond and Related Materials. 1. 187-190 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] A.Yanase: "In Situ Optical Obserbation of Oxygen-Adsorption-Induced Reversible Change in the Snape of Sinall-Supported Silver Particles." Surface Science. 264. 147-156 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 小宮山 宏: "CVDハンドブック" 朝倉書店, 800 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.J.Kim: "Determination of Surface Reaction Rate Constant by Using Micro-Trench Method in APCVD" Kagaku Kogaku Ronbunshu. 17(6). 622-628 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.J.Kim: "Molecular Size and Its Temperature Dependence of Growth Species in Chemical Vapor Deposition of Aluminum Nitride" J.of Chem.Vap.Dep.1. 20-41 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] L.-S.Hong: "Sticking Probability of the Film Precursor in Epitaxial Growth of SiC Films by Chemical Vapor Deposition from SiH_4 and C_3H_8" Proc.of the 12th International Symp.on CVD. 401-407 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Saito: "Existence of Extinction Temperature in WSix Film Growth from WF_6 and SiH_4 : An Indication of the Role Playd by Radical Chain Reactions" Appl.Phys.Lett.62(14). 1606-1608 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] M.Ihara: "Low-Temperature Deposition of Diamond in a Temperature Range from 70* to 700*" Diamond and Related Materials. 1. 187-190 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] A.Yanase: "In Situ Optical Observation of Oxygen-Adsorption-Induced Reversible Change in the Shape of Small Supported Silver Particles" Surface Science. 264. 147-156 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Komiyama: CVD Handbook. Asakura Shoten, 800 (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 金煕濬: "常圧熱CVDによるAlN膜合成における配向性の制御" 化学工学論文集. 18. 622-628 (1992)

    • Related Report
      1993 Annual Research Report
  • [Publications] H.J.Kim: "Molecular Size and Its Temperature Dependence of Growth,Species in Chemical Vapor Deposition of Aluminum Nitride." J.of Chem.Vap.Dep.1. 20-41 (1992)

    • Related Report
      1993 Annual Research Report
  • [Publications] L.-S.Hong: "Sticking Probability of the Film Precursor in Epitaxial Growth of SiC Films by Chemical Vapor Deposition from SiH_4 and C_3H_8" Proc.of the 12th International Symp.on CVD. 401-407 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] T.Saito: "Existence of Extinction Temperature in WSiX Film Growth from WF_6 and SiH_4:An Indication of the Role Played by Radical Chain Reactions" Appl.Phys.Lett.62. 1606-1608 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Ihara: "Low Temperature Deposition of Diamond in a Temperature Rauge from 70℃ to 700℃" Diamond and Related Materials. 1. 187-190 (1992)

    • Related Report
      1993 Annual Research Report
  • [Publications] A.Yanase: "In Situ Optical Observation of Oxygen-Adsorption-Induced Reversible Change in the Shape of Small Supported Silver Particles" Surface Science. 264. 147-156 (1992)

    • Related Report
      1993 Annual Research Report
  • [Publications] 小宮山 宏: "CVDハンドブック" 朝倉書店, 800 (1991)

    • Related Report
      1993 Annual Research Report
  • [Publications] 小宮山 宏: "CVD成膜種としてのクラスターとその付着確率-AlCl_3とNH_3からのCVDによるAlN合成の例-" 表面. 30. 1016-1021 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 金 煕濬: "常圧熱CVDによるAlN膜合成における配向性の制御" 化学工学論文集. 18. 622-628 (1992)

    • Related Report
      1992 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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