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Study on transport phenomena of electron-hale plasmas in semiconductors

Research Project

Project/Area Number 04640340
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 固体物性
Research InstitutionOsaka University

Principal Investigator

NAKAYA Hiroyasu  Osaka University, College of General Education Assistant Professor, 教養部, 助教授 (60116069)

Co-Investigator(Kenkyū-buntansha) KOBORI Hiromi  Osaka University, College of General Education Reserch Assistant, 教養部, 助手 (90202069)
FUJII Ken-ichi  Osaka University, College of General Education Reserch Assistant, 教養部, 助手 (10189988)
OHYAMA Tyuzi  Osaka University, College of General Education Professor, 教養部, 教授 (40029715)
Project Period (FY) 1992 – 1993
Project Status Completed (Fiscal Year 1993)
Budget Amount *help
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1993: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1992: ¥1,300,000 (Direct Cost: ¥1,300,000)
Keywordsgermanium / electron-hole plasma / far-infrared / photoluminescence / cyclotron resonance / diffusion / 半導体 / 輸送現象
Research Abstract

this project aims to investigate the expansion mechanism of high-density electron-hole plasma generated in a semiconductor. We performed experiments on the plasma in Ge and GaAs. Fast diffusion of excitons accompanying with expanding plasma was observed in far-infrared magneto-aborption measurement. The dirift belocity decreases in magnetic fields and the expasion of the plasma is suppressed by magnetic fields. On the other hand, the ecperimental set-up of optically detected far-infrared cyclotron tesonance which has a possibility to observe the electron-hole plasma was newly developed and the resonance signal was observed in GaAs. We observed photoluminescence in 0.4-mm-thick Ge sample. Surface recombination deduces the density of free excitons. Further, far-infrred absorption of excitons is obserbed in this sample. The assignment is confirmed by the dependence on far-infrafed wavelength. The experimental results of far-infrared time-of flight absorption are interpreted time-of flight absorption are interpreted on the basis of the knowledge on the thin sample. The signal observed in far-infrared absorption is due to free exctions and the drift velocity decreases with increasing magnetic fields. In patricular, the velocity at zero magnetic field is 7 * 10^3 cm/s and the free excitons are emitted from the high density plasma or they follow fast diffusing plasma.

Report

(3 results)
  • 1993 Annual Research Report   Final Research Report Summary
  • 1992 Annual Research Report
  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] H.Nakata: "Spectroscopy of photo-excited semiconductors" J.Infrared & Millimeter Waves. 11. 89-96 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Nakata: "Photoluminescence from an electron-hole plasma in semi-insulating GaAs" Semiconductor Science and Technology. 7. 1266-1270 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Nakata: "Magnetic confinement of electron-hole plasma in Ge" Proc.Todai Int.Symp.1993“Frontiers in High Magnetic Fields".

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Nakata: "Spectroscopy of photo-excited semiconductors" Jounal of Infrared Millimeter Waves. 11. 89-96 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Nakata, A.Uddin and E.Otsuka: "Photoluminescence from an electron-hole plasma in semi-insulating GaAs" Semicoductor Science and Techology. 7. 1266-1270 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Nakata and T.Ohyama: "Magnetic confinement of electron-hole plasma in Ge" Proceedings of Tdai International Symposium 1993 and 4th ISSP International Symposium "Frontiers in High Magnetic Fields". (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Nakata: "Magnetic Confinement of Electron-Hole Plasma in Ge" Proc.of Todai Int.Symp.1993“Frontiers in High Magnetic Field's".

    • Related Report
      1993 Annual Research Report
  • [Publications] H.Nakata,H.Kobori A.Uddin,T.Ohyama and E.Otsuka: "Diffusion and recombination of photocarriers in Ge and GaAs" Semicond.Sci.Technol.7. B334-B336 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] H.Nakata,A.Uddin and E.Otsuka: "Photoluminescence from an electron-hole plasma in semi-insvlating GaAs" Semicond.Sci.Technol.7. 1266-1270 (1992)

    • Related Report
      1992 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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