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Study on Defects in GaAs by means of Positron Annihilation

Research Project

Project/Area Number 04650030
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionThe Institute of Physical and Chemical Research (RIKEN)

Principal Investigator

ITOH Yoshiko  RIKEN,Nuclear Chem.Lab., Senior Research Scientist, 核化学研究室, 先任研究員 (90087429)

Co-Investigator(Kenkyū-buntansha) MURAKAMI Hideoki  Gakugei Univ., Department of Education, Professor, 教育学部, 教授 (30011000)
NAKANISHI Noriyoshi  RIKEN,Cycrotron Lab., Senior Research Scientist, サイクロトロン研究室, 先任研究員 (90087388)
AMBE Fumitoshi  RIKEN,Nuclearchem.Lab., Chief Research Scientist, 核化学研究室, 主任研究員 (50087491)
Project Period (FY) 1992 – 1993
Project Status Completed (Fiscal Year 1993)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1993: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1992: ¥1,700,000 (Direct Cost: ¥1,700,000)
Keywordspositron annihilation / Doppler measurement / life time measurement / ortho-positronium / para-positronium / オルソポジトロニウム / パラポジトロニウム / 陽電子消滅寿命 / ドップラー拡がり / ポーラスシリコン / 低速陽電子ビーム / 陽電子消滅ドプラー広がり / GaAs結晶欠陥
Research Abstract

1. Study of LEC-GaAs
(1) Measurement of positron lifetime and Doppler-broadened annihilation have been performed on electron irradiated LEC-GaAs. Recovery and clustering of electron induced defects were published in Applied Physics A 58,59(1994)
(2) Temperature dependence of proton irradiation induced defects were studied using positron annihilation technique. Below 300K the charge state Si doping induced defects were investigated and Gallium vacancies and antisite GaAs were produced after proton irradiation (submitted in Applied Phys A).
2. Production of slow positron beam using A VF Cyclotron.
(1) Construction of System for production of slow positron beam. System has been modified for high quality slow positron beam and low background.
(2) Several targets such as boron nitride (BN), Carbon, Si_3N_4 and, NaF were used for beta_+ decay reaction. For BN slow positron intensity of 1.4 X 10^4/sec was obtained.

Report

(3 results)
  • 1993 Annual Research Report   Final Research Report Summary
  • 1992 Annual Research Report
  • Research Products

    (17 results)

All Other

All Publications (17 results)

  • [Publications] Y.Itoh et al.: "Defects on Electron or Proton Irradiated Undoped and Si-doped GaAs by Positron Annihilation" Materials Science Forum. 105-110. 1085-1088 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh et al.: "Positron Annihilation in Porous Silicon" Appl.Phys.Lett.63. 2798-2799 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh et al.: "Positron Annihilation Study on Nanometer Cavities in Porous Silicon" Hyperfine Interaction. (in press).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh et al.: "Defect Study on Electron Irradiated GaAs by means of Positron Annihilation" Appl.Phys.A. 58. 59-62 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh et al.: "Characterization of Porous Silicon by Positron Annihilation" J.de Physique IV-Colloquia C4,J.de Physique II. 3. 193-195 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh et al.: "RIKEN Review No4 Focused on Heavy Ion Science and Technology" The Institute of Physical and Chemical Research(RIKEN), 80 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh, H.Murakami, and A.Kinoshita: ""Positron Annihilation in Porous Silicon"" Appl.Phys.Lett.63. 2798-2799 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh, H.Murakami, and A.Kinoshita: ""Positron Annihilation Study on Nanometer Cavities in Porous Silicon"" Hyperfine Interaction. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh and H.Murakami: ""Defect Study on Electron Irradiated GaAs by means of Positron Annihilation"" Appl.Phys.A. 58. 59-62 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh, H.Murakami, and T.Suzuki: ""Defects on Electron or Proton Irradiated Undoped and Si-doped GaAs by Positron Annihilation"" Materials Sciences Forum 105-110. 1085-1088 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh, H.Murakami, and A.Kinishita: ""Chararization of Porous Silicon by Positron Annihilation"" J.de Physique IV-Colloquia C4, J.de Physique II. 3. 193-195

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Itoh et al.: "Defects on Electron or Proton Irradiated Undoped and Si-doped GaAs by Positron Annihilation" Materials Science Forum. 105-110. 1085-1088 (1992)

    • Related Report
      1993 Annual Research Report
  • [Publications] Y.Itoh et al.: "Positron Annihilation in Porous Silicon" Appl.Phys.Lett.63. 2798-2799 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Y.Itoh et al.: "Positron Annihilation Study on Nanometer Cavities in Porous Silicon" Hyperfine Interaction. (in press). (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] Y.Itoh et al.: "Defect Study on Electron Irradiated GaAs by means of Positron Annihilation" Appl.Phys.A. 58. 59-62 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] Y.Itoh et al.: "Characterization of Porous Silicon by Positron Annihilation" J.de Physique I V Colloquia C4,J. de Physique I I. 3. 193-195 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] Yoshiko Itoh: "Defects in Electron or Proton Irradiated Undoped and Si-doped GaAs by Positron Annihilation" Materials Science,Forum. 105-110. 1085-1088 (1992)

    • Related Report
      1992 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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