| Project/Area Number |
04650340
|
|---|
| Research Category |
Grant-in-Aid for General Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
電子機器工学
|
|---|
| Research Institution | The University of Electro-Communucations |
|---|
Principal Investigator |
USAMI Koichi Univ.Electro-Communications Electrical Communication Assistant, 電気通信学部, 助手 (60017407)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
GOTO Tosinari Univ.Electro-Communications Electrical Communication Professor, 電気通信学部, 教授 (70017333)
|
|---|
| Project Period (FY) |
1992 – 1993
|
| Project Status |
Completed (Fiscal Year 1993)
|
| Budget Amount *help |
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1993: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1992: ¥1,000,000 (Direct Cost: ¥1,000,000)
|
|---|
| Keywords | Cold cathode / Tunnel emitter / Tunnel phenomena / Tunnel device / MIS divice / Si oxide film / Plasma oxidation / Hollow discharge |
|---|
| Research Abstract |
Tunnel emitter is expected as a small size cold cathode in a micron scale vacuum electron tube which opaerates at a very high speed and which can operate correctly in high temperature or radiometric environment. In addition, it has very promising characteristics as a cathode because its higher emission density, lower noise temperature, higher reliability and so on, compared with those of conventional thermal cathode.
In this study we have intended to develop such tunnel emitter on Si substrate for the application to integrated vacuum microelectronic device. First of all, the preparation of ultra thin Si oxide film by using hollow cathode enhanced plasma oxidation system was investigated. Then the MIS(Metal-Insulator-Semiconductor)type tunnel emitter was fabricated using this film as a tunnel barrier insulator. The electrical properties of the diode, such as I-V characteristics, tunnel resistence and electron emissivity were investigated in relation to the fabrication conditions.
The results of these expriments were as follows,
1)Ultra thin Si oxide films for the tunnel barrier insulator in the thickness range 5-20nm were grown controllably and reproducibly on the n-type Si(100) substrates by using hollow cathode enhanced plasma oxidation system.
2)MIS diode type tunnel emitter was fabricated on the film and the electrical properties of the diode were measured. From the observation of Fowler-Nordheim plot of the diode, the tunneling current was dominant in the diode current through the ultra thin Si oxide insulator.
3)Electron emission from the MIS tunnel emitter was measured in a high vacuum metal chamber. Maximum electron emission current of 800pA was obtained through an 1mm^2 emission area at a diode voltage of 12.5V.
|
