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Formation and Annihilation of Stacking Faults in Silicon Carbide

Research Project

Project/Area Number 04650692
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 無機工業化学・無機材料工学
Research InstitutionNagoya University

Principal Investigator

KOUMOTO Kunihito  Nagoya University, School of Eng. Professor, 工学部, 教授 (30133094)

Co-Investigator(Kenkyū-buntansha) WON Son Seo  Nagoya University, School of Research Assoc., 工学部, 助手 (30242829)
Project Period (FY) 1992 – 1993
Project Status Completed (Fiscal Year 1993)
Budget Amount *help
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 1993: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1992: ¥1,500,000 (Direct Cost: ¥1,500,000)
KeywordsSilicon carbide / Stacking fault / Grain growth / Surface diffusion / High-temperature / Reaction rate / Formation / Annihilation / 炭化ケイ素 / 積層欠陥 / 粒成長 / 表面拡散 / 拡散律速 / 速度論
Research Abstract

Annihilation of stacking faults in beta-SiC was found to occur simultaneously with grain growth during high-temperature sintering. Analyzes of the rate process by use of the Avrami-Erofeev equation indicated that the rate of annihilation of stacking faults was controlled by the atomic diffusion process. The rate of grain growth, on the other hand, was found to be limited by surface diffusivity. Coincidence in the values of activation energy for the two processes suggested that the annihilation of stacking faults is an apparent phenomenon resulting from the microstructural evolution in which the grain growth is controlled by surface diffusivity. Incorporation of nitrogen during heating suppressed the surface diffusivity and hence, the rate of stacking fault annihilation. Formation of stacking faults during the synthesis of beta-SiC by cabothermal reduction of silica was also investigated and we found that two kinds of morphology, whisker and sphere, were always observed for the synthesized powder, and that a larger amount of stacking faults were containde in whiskers than in spherical particles.

Report

(3 results)
  • 1993 Annual Research Report   Final Research Report Summary
  • 1992 Annual Research Report
  • Research Products

    (8 results)

All Other

All Publications (8 results)

  • [Publications] W.S.Seo,K.Koumoto: "Kinetics and Mechanism of Stacking Fault Annihilation and Grain Growth in Porous Ceramics of β-SiC" J.Mater.Res.18. 1644-1650 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Takeda,W.S.Seo,K.Koumoto,et al.: "Thermoelectric Properties of Porous β-SiC Fabricated from Rice Hull Ash" J.Ceram Soc.Japan. 101. 814-818 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] W.S.Seo, K.Koumoto: "Kinetics and Mechanism of Stacking Fault Annihilation and Grain Growth in Porous Ceramics of beta-SiC" J.Mater.Res.18. 1644-1650 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Takeda, W.S.Seo, K.Koumoto, et al.: "Thermoelectric Properties of Porous beta-SiC Fabricated from Rice Hull Ash" J.Ceram Soc.Japan. 101. 814-818 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] W.S.Seo: "Kinetics and Mechanism of Stacking Fault Annihilation and Grain Growth in Porous Ceramics of β-SiC" J.Mater.Res.18. 1644-1650 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] S.Takeda: "Thermoelectric Properties of Porous β-SiC Fabricated from Rice Hull Ash" J.Ceram Soc.Japan. 101. 814-818 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 河本 邦仁、徐 元善、〓 哲薫、柳田 博明: "Behavior of Stacking Faults in β‐SiC‐Mechanism of Annihilation and additive effects‐" Solid State Phenomena. 25&26. 133-142 (1992)

    • Related Report
      1992 Annual Research Report
  • [Publications] 河本 邦仁,徐 元善: "Kinetics and Mechanism of Stacking Fault Annihilation and Grain Growth in Porous Ceramics of β‐SiC" Journal of Materials Research 発表予定. (1993)

    • Related Report
      1992 Annual Research Report

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Published: 1992-04-01   Modified: 2016-04-21  

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