• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Epitaxial Growth of Diamond on Boron Containing Single Crystals

Research Project

Project/Area Number 04805003
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionAoyama Gakuin University

Principal Investigator

INUZUKA Tadao  Aoyama Gakuin Univ. Dept. of Elect. Engn and Electronics, Professor, 理工学部, 教授 (30082788)

Project Period (FY) 1992 – 1993
Project Status Completed (Fiscal Year 1993)
Budget Amount *help
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1993: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1992: ¥1,300,000 (Direct Cost: ¥1,300,000)
KeywordsDiamond / Epitaxy / CVD / Thin film / エピタキシー / 薄膜
Research Abstract

Epitaxial growth of diamond on boron containing compoud such as cBN, BP, heavily boron doped Si, boron tailored Si surface has been performed using DC plasma CVD method. On most of the substrates, epitaxial growth cannot be observed except cBN.The reason of this fact is due to the surface damages by reaction of hydrogen under the higher substrate temperature and also the removal of born atoms existing on the surface by carbon atoms.
At the initial growth stage of deposition on cBN (111) surface (boron surface), the very thin carbon layrts start to grow prior to the epitaxial growth of diamond islands. The Crystal structure of this layr is not known well at this moment. Considering the fact that diamond grows eptaxially on this thin layr, the structure of this thin later will be close to the structure of diamond.
By SEM observation, it is found that this layr gives quite bright contrast. It is supposed that electrons will be emitted from the surface of the layr. We have tried the preliminary experiment of field emission of electrons The electron current from the carbon layr is relatively high compared with the current from molybdeum surface in the same sruface geometry. This electron emitter words quite stable for the long period experiment.
We have fablicated the simple device working as a new electron emitter.

Report

(3 results)
  • 1993 Annual Research Report   Final Research Report Summary
  • 1992 Annual Research Report
  • Research Products

    (6 results)

All Other

All Publications (6 results)

  • [Publications] T.Inuzuka,S.Koizumi and K.Suzuki: "Epitaxial Growth of Diamond Thin Films on Foreign Substrates" Diamond and Related Materials. 1. 175-179 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Koizumi and T.Inuzuka: "Initial Growth Process of Epitaxial Diamond Thin Films on cBN Single Crystals" Jpn.J.Appl.Phys.32. 3920-3927 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] 犬塚直夫(分担): "表面新物質とエピタクシー" 培風館, 262 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Inuzuka, S.Koizumi and K.Suzuki: "Epitaxial growth of Diamond Thin Films on Foreign Substrate" Diamond and Related Materials. 1. 175-179 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Koizumi and T.Inuzuka: "Initial Growth Process of Epitaxial Diamond Thin Films on cBN single Crystals" Jpn.J.Appl.Phys.32. 3920-3927 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Inuzuka,S.Koizumi and K.Suzuki: "Epitaxial growth of Diamond Thin Films on foreign substrates" Diamond and Related Materials. 1. 175-179 (1992)

    • Related Report
      1992 Annual Research Report

URL: 

Published: 1992-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi