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Advanced Science and Technology for Semiconductor Materials and Devices

Research Project

Project/Area Number 05044206
Research Category

Grant-in-Aid for Overseas Scientific Survey.

Allocation TypeSingle-year Grants
Research InstitutionTokyo Institute of Technology

Principal Investigator

KUKIMOTO Hiroshi  Tokyo Institute of Technology, Professor, 工学部, 教授 (50013488)

Co-Investigator(Kenkyū-buntansha) LIM Kee Young  Jeonbuk National University, 助教授
CHANG Kee Joo  Korea Advanced Institute of Science and Technology, 助教授
MIN Suk Ki  Korea Institute of Science and Technology, 研究員
LEE Hyung Jae  Jeonbuk National University, 教授
CHOI Byung Doo  Seoul National University, 教授
TAKEDA Yoshikazu  Nagoya University, 工学部, 教授 (20111932)
YAO Takafumi  Hiroshima University, 工学部, 教授 (60230182)
YOSHIKAWA Akihiko  Chiba University, 工学部, 教授 (20016603)
SHIRAKI Yasuhiro  The University of Tokyo, 先端研センター, 教授 (00206286)
Project Period (FY) 1993
Project Status Completed (Fiscal Year 1993)
Keywordssemiconductor / quantum structure / device / process / characterization
Research Abstract

Recently, there has been an increasing research effort in the field of quantum size effects in semiconductor microstructures and their application for novel electronic and optoelectronic devices. The development of this field depends largely on progress in advanced science and technology, and thus needs international research cooperation. Korea is one of the most appropriate partner countries for the international research cooperation in this field.
The purpose of this project is, therefore, to promote the researches on advanced science and technology for semiconductor materials and devices in Japanese and Korean research institutes, based on an exchange of scientific information and mutual collaborations.
The activities and achievements of this project are as follows.
1) The materials investigated include SiGe, III-Vs (AlGaAs and GaInPAs) and II-VIs (ZnSe and CdSe). A variety of micostructures such as superlattices, quantum wires and quantum dots consisted of these materials were fabricated by using molecular beam epitaxy and metalorganic vapor phase epitaxy. Characterization of these materials and structures directed toward their device applications was also performed.
2) Japan-Korea Symposium on Advanced Science and Materials for Semiconductor Materials and Devices was held in September 1993, in Sapporo with participants of 17 from Japan and 9 from Korea. Discussion was made about the results of collaborative studies of this project.
3) Summary of this project was made at a meeting held in December, 1993 in Korea, where 4 Japanese members were sent. By using the opportunity, further research cooperation between Japan and Korea in the future was discussed.
In summary, the purpose of this research project was successfully carried out with remarkable achievements and promise for further collaborations.

Report

(1 results)
  • 1993 Final Research Report Summary
  • Research Products

    (20 results)

All Other

All Publications (20 results)

  • [Publications] H.Kikimoto: "Doping of Wide Band-Gap II-VI Compounds for Short-Wavelength Visible Light Emitting Devices" Materials Science Forum. 143-147. 385-390 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Shiraki: "Formation of SiGe/Si Quantum Wells and Their Optical Properties" 3rd Japan-Korea Joint Symposium“Advanced Science and Technology of Semiconductor Materials and Devices". 1-6 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] A.Yoshikawa: "A New In-situ Optical Probing Method in Heteroepitaxy:Surface Photo-Interference(SPI)and Its Application to the Study of ZnSe MOMBE Growth Process" 3rd Japan-Korea Joint Symposium“Advanced Science and Technology of Semiconductor Materials and Devices". 50-57 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Yao: "Local Atomic Arrangement on the Al-Absorbed Si(111)-7×7 Surface Observed with STM" 3rd Japan-Korea Joint Symposium“Advanced Science and Technology of Semiconductor Materials and Devices". 64-70 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Takeda: "EXAFS Characterization of Growth Process-Dependent Heterostructures for Quantum Devices" 3rd Japan-Korea Joint Symposium“Advanced Science and Technology of Semiconductor Materials and Devices". 39-43 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Park: "Origin of the Long-Wavelength-Side Peak in Al_XGa_<1-X>As:Si Light-Emitting Diodes" Jpn.J.Appl.Phys.32. 3197-3198 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.-J.Lee: "Correlation of Optical and Structural Properties of Light Emitting Porous Silicon" Appl.Phys.Lett.62. 855-857 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.-I.Kim: "Electrical Characteristics of Carbon-Doped GaAs" J.Appl.Phys.73. 4703-4705 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] C.-H.Park: "Structural and Electronic Properties of GaP-AlP(100)Superlattices" Phys.Rev.B47. 12709-12715 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] K.-Y.Lim: "Photoluminescence and Raman Scattering Analysis of In_XGa_<1-X>As Epilayers Grown on GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition" 3rd Japan-Korea Joint Symposium“Advanced Science and Technology of Semiconductor Materials and Devices". 58-63 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.J.Lee: "Correlation of Optical and Structural Properties of Light Emitting Porus Silicon" Appl.Phys.Lett.32. 3197-3198 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.I.Kim: "Electrical Characterization of Carbon-Doped GaAs" J.Appl.Phys.73. 4703-4705 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] C.H.Park: "Structural and Electronic Properties of GaP-AlP(100) Superlattices" Phys.Rev.B47. 12709-12715 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] K.Y.Lim: "Photoluminescence and Raman Scattering Analysis of In_xGa_<1-x>As Epilayers Grown on GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition" 3rd Japan-Korea Symposium on Advanced Science and Technology for Semiconductor Materials and Devices. 58-63 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] H.Kukimoto: "Doping of Wide-gap II-VI Compounds for Short-Wavelength Visible Light Emitting Devices" Materials Science Forum. 143-147. 385-390 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Shiraki: "Formation of SiGe/Si Quantum Wells and Their Optical Properties" 3rd Japan-Korea Symposium on Advanced Science and Technology for Semiconductor Materials and Devices. 1-6 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] A.Yoshikawa: "A New In-situ Optical Probing Method in Heteroepitaxy: Surface Photo-Interference(SPI) and Its Application to the Study of ZnSe MOMBE Growth Process" 3rd Japan-Korea Symposium on Advanced Science and Technology for Semiconductor Materials and Devices. 50-57 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] T.Yao: "Local Atomic Arrangement on the Al-Absorbed Si(111)-7x7 Surface Observed with STM" 3rd Japan-Korea Symposium on Advanced Science and Technology for Semiconductor Materials and Devices. 64-70 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] Y.Takeda: "EXAFS Characterization of Growth Process-Dependent Heterostructures for Quantum Devices" 3rd Japan-Korea Symposium on Advanced Science and Technology for Semiconductor Materials and Devices. 39-43 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary
  • [Publications] S.Park: "Origin of the Long-Wavelength-Side Peak in Al_xGa_<1-x>As: Si Light-Emitting Diodes" Jpn.J.Appl.Phys.32. 3197-3198 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1993 Final Research Report Summary

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Published: 1995-02-07   Modified: 2016-04-21  

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