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Doping by single Ion Implantation and its application to solid state materials and devices.

Research Project

Project/Area Number 05101003
Research Category

Grant-in-Aid for Specially Promoted Research

Allocation TypeSingle-year Grants
Review Section Physics
Research InstitutionWaeda University

Principal Investigator

OHDOMARI Iwao  Waseda Univ.School of Science and Engineering, Professor, 理工学部, 教授 (30063720)

Co-Investigator(Kenkyū-buntansha) TANIGAWA Shoichiro  Tsukuba Univ.Institute of Materials Sciences, Professor, 物質工学系, 教授 (90011080)
HOSHINO Tadatsugu  Chiba Univ.Faculty of Pharmaceutical Sciences, Lecturer, 薬学部, 講師 (90257220)
川原田 洋  早稲田大学, 理工学部, 助教授 (90161380)
Project Period (FY) 1993 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥224,000,000 (Direct Cost: ¥224,000,000)
Fiscal Year 1996: ¥14,000,000 (Direct Cost: ¥14,000,000)
Fiscal Year 1995: ¥47,000,000 (Direct Cost: ¥47,000,000)
Fiscal Year 1994: ¥43,000,000 (Direct Cost: ¥43,000,000)
Fiscal Year 1993: ¥120,000,000 (Direct Cost: ¥120,000,000)
KeywordsSingle Ion / Single Ion Implantation / FIB / point defect / material control / positron annihilation / ultrafine structure / surface structural phase transition / 物性制御
Research Abstract

Development of the single ion implantation (SII) was conducted for the purpose of implanting accurate number of dopant ions one by one into ultra fine semiconductor structures. By evaluating the number of implanted ions and detection efficiency of the single ion incidence, the SII has been proven to be effective in suppressing the fluctuation in dopant number 50% less than the conventional ion implantation.
Immunity of VLSIs against transient malfunction induced by single ion irradiation was investigated using single ion microprobe technique, and sensitive site in the VLSIs and mechanism of the malfunction have been identified.
Damages introduction with ion irradiation and subsequent anisotropic etching have yielded Si nano-wires successfully.
The enhanced gold plating was observed at the nano-modified silicon surface using SII.
The temperature dependence of Schottky barrier I-V characteristics revealed that near surface damages in Si introduced by ion irradiation reduced the Schottky barrier height due to fermi level position at the metal-semiconductor interface.
Ion implantation induced defects were investigated by positron annihilation technique and the relationship between their depth profile and ion species was clearly established.
For the next stage intense positron beam, high efficiency positron moderators were developed together with the use of ^<60>C source. At present, the result that guarantees the thousand times high efficiency moderation was obtained.
Processes of oxidation, H_2 desorption and adsorption of alkaline metals on Si surfaces have been clarified using molecular orbital calculations. Energy changes along the 7x7 formation steps and the effect of oxygen atoms was calculated.
Dynamic growth steps of the DAS domains were precisely observed in-situ using high temperature STM.Isolated DAS domains nucleated or annihilated with a single stacking fault triangle as a building unit and the critical nucleus size for growth was revealed.

Report

(5 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report
  • 1994 Annual Research Report
  • 1993 Annual Research Report
  • Research Products

    (165 results)

All Other

All Publications (165 results)

  • [Publications] K.Tsukui: "Treatment of the wall materials of extremely high vacuum chamber for dynamical surface analysi" J. Vac. Sci. Tech. A. A11. 417-421 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Tsukui: "Extremely high vacuum system for dynamical surface analysis" J. Vac. Sci. Tech. A11. 2655-2658 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] N.Yagi: "An all metal extremely high vacuum cryopump" Vacuum. 44. 705-708 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 津久井 克幸: "極高真空中における表面/界面の不純物制御" 日本金属学会報. 32. 901-902 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Theoretical consideration on dimer vacancy images in the STM observations of Si (001) surfaces in terms of the adsorption of O_2 molecules" Surf. Sci. Lett. 291. L763-L767 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "Evaluation of single-event immunity in micron-size device area using single-ion microprobe technique" Nucl. Instr. and Meth.B77. 239-242 (1993)

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    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Mechanism of O2 Molecule Adsorption and Subsquent Oxidation of Dimers on Si (001) Surfaces" Proc Mat. Res. Soc. Sym.93-98 (1994)

    • Description
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    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Mechanisms of the Adsorption of Oxygen Moleacules and the Susequent Oxidation of the Reconstructed Dimers on Si (001) Surfaces" Phys. Rev.B50. 14999-15008 (1994)

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      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Development of the Single Ion Beam Induced Charge (SIBIC) Imaging Technique Using the Single Ion Microprobae System" Nucl. Instr and Meth.B93. 82-86 (1994)

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      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Reverse-Mode Single Ion Beam Induced Charge (R-Mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)" Jpn. J. Apple. Phys. 33. L962-L965 (1994)

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      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "Total dose Dependence of Soft-error Hardness in 64kbit SRAMS Evaluated by Single-Ion Microprobe Technique" IEEE Trans. Nucl. Sci.41No.6. 2071-2076 (1994)

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      「研究成果報告書概要(和文)」より
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      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "Identification of Soft-Error Sensitive Junction in SRAMS Using a Single Ion Microprobe" IEEE Electron Device Letters. 15 No.6. 199-201 (1994)

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      「研究成果報告書概要(和文)」より
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      1996 Final Research Report Summary
  • [Publications] H.Fukuda: "Effect of deuterium anneal on SiO_2/Si (100) interface traps and electron spin resonance signals of ultrathin SiO_2 films" Jpn. J. Appl. Phys. 32. L569-L571 (1993)

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      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Radiation effects induced by high energy He single ions at Si/SiO_2 interfaces" Proc. 1st Int'1 Symp. Control of Semiconductor Interfaces. 1. 241-246 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I.Ohdomari: "Doping by Single Ion Implantation" Proc. 1st Int'1 Symp. Control of Semiconductor Interfaces. 1. 233-240 (1994)

    • Description
      「研究成果報告書概要(和文)」より
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      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Oxidation mechanism of dimers on Si (001) surfaces" Proc. 1st Int'1 Symp. Control of Semiconductor Interfaces. 1. 221-226 (1994)

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      1996 Final Research Report Summary
  • [Publications] M.Koyama: "A trial to detect isolated defects in Si induced by single ion implantation" Proc. 1st Int'1 Symp. Control of Semiconductor Interfaces. 1. 459-460 (1994)

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      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I.Ohdomari: "Doping semiconductor fine structure by single ion implantation" Proc. of AMDP. 697-702 (1994)

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    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Evidence for the leading role of the stacking-fault triangle in the Si (111) 1×1->7×7 phase transition" Phys. Rev.B.51. 14594-14597 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Tsukui: "Changes in transition temperature of the Si (111) 1×1-7×7 phase transition observed under various oxygen environments" Surf. Sci. Letters. 328. L553-L560 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "High-Temperature Scanning Tunneling Microscopy (STM) Observation of Metastable Structures on Quenched Si (111) Surfaces" Japan Journal of Applied Physics. 34. 3346-3350 (1995)

    • Description
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      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Critial Domain Size of the 7×7 Structure for Nucleation and growth on Si (111) Quenched Surfaces" Phy. Rev. Letters. 75. 2372-2375 (1995)

    • Description
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      1996 Final Research Report Summary
  • [Publications] I.Ohdomari: "サイエンスとテクノロジーの共同のための一提案" Journal of The Surface Sci. Society of Japan. 16. 223-223 (1995)

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      1996 Final Research Report Summary
  • [Publications] K.Kumamoto: "Effect of the adatom presence on stabilizing Si (111) nxn dimer-adatom-stacking fault structures" Phy. Rev.B52. 10784-10787 (1995)

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      1996 Final Research Report Summary
  • [Publications] I.Ohdomari: "Single Ion Implantation Technique" Oyo Buturi. 64. 777-781 (1995)

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      1996 Final Research Report Summary
  • [Publications] 大泊 巌: "大学における研究室運営の一例" 電子情報通信学会誌. 79. 76-77 (1996)

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      1996 Final Research Report Summary
  • [Publications] K.Kumamoto: "Dynamic growth steps of n×n dimer-adatom-stacking-fault domains on the quenched Si (111) surface" Phys. Rev. B53. 12907-12911 (1996)

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      「研究成果報告書概要(和文)」より
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      1996 Final Research Report Summary
  • [Publications] T.Tanii: "Nonscalability of Alpha-Particle-Induced Charge Collection Area" Jpn. J. Appl. Phys. 35. L688-L690 (1996)

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      1996 Final Research Report Summary
  • [Publications] M.Koh: "Radiation immunity of pMOSFETs and nMOSFETs examined by means of Mev He single ion microprobe" Appl. Surf. Sci.104/105. 364-368 (1996)

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      1996 Final Research Report Summary
  • [Publications] M.Koh: "Quantitative analysis of radiation induced Si/SiO_2 interface defects by means of MeV He single ion irradiation" Appl. Phys. Lett.68. 1552-1554 (1996)

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      「研究成果報告書概要(和文)」より
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      1996 Final Research Report Summary
  • [Publications] M.Koh: "Quantitative investigation of localized ion irradiation effects in nMOSFET using single ion microprobe" Appl. Phys. Lett. 68. 3467-3469 (1996)

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      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Origin of buckling-dimer-row formation of Si (001) surfaces" Phys. Rev. B54. 11331-11339 (1996)

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      「研究成果報告書概要(和文)」より
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      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Dynamic features in generation and disappearance of Si (111) -7×7 domains" Appl. Surf. Sci. 107. 53-57 (1996)

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      「研究成果報告書概要(和文)」より
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      1996 Final Research Report Summary
  • [Publications] M.Koyama: "Quantitative analysis of degradation in Schottky diode characteristics induced by single ion implantation" Appl. Surf. Sci. 104. 253-256 (1996)

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      1996 Final Research Report Summary
  • [Publications] 黄 明植: "半導体デバイスへのシングルイオン照射効果" 放射線と産業. No.69. 38-42 (1996)

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      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "STM observation of "craters" on graphite surface induced by single ion implantation" Appl. Surf. Sci. 107. 227-232 (1996)

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      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "Evaluation of Soft-Error Hardness of DRAMs under Quasi-Heavy Ion Irradiation using He Single Ion Microprobe21GC37:IEEE Trans. Nucl. Sci" 43. 2952-2959 (1996)

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      1996 Final Research Report Summary
  • [Publications] M.Koh: "Quantitative estimation of generation rates of Si/SiO_2 interface defects by MeV He single ion irradiation" IEEE Trans. Nucl. Sci. 43. 2952-2959 (1996)

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      1996 Final Research Report Summary
  • [Publications] M.Koh: "Quantitative characterization of Si/SiO_2 interface traps induced by energetic ions by means of SIMP and SIBIC imaging" Appl. Surf. Sci. (in press).

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      1996 Final Research Report Summary
  • [Publications] T.Watanabe: "Mechanism of H_2 desorption from H-terminated Si (001) surfaces" Appl. Surf. Sci. (in press).

    • Description
      「研究成果報告書概要(和文)」より
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      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "Development of single ion implantation-controllability of implanted ion number" Appl. Surf. Sci. (in press).

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      1996 Final Research Report Summary
  • [Publications] T.Shinada: "Fabrication of Thin Si Wires with Highly Controlled Feature Size" Appl. Surf. Sci. (in press).

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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "Positron annihilation in proton irradiated Czochralski-grown Si" Jpn. J. Appl. Phys. 33. 1-5 (1994)

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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "SiO_2 films deposited on Si substrates by monoenergetic positron beams" J Appl. Phys.75. 216-222 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Uedono: "The positronium formation in SiO_2 films grown on Si substrates studied by monoenergetic positron beams" J Appl. Phys.75. 3822-3828 (1994)

    • Description
      「研究成果報告書概要(和文)」より
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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "Defects in electron irradiated vitreous SiO_2 probed by positron annihilation" J. Phys. Condens. Matter. 6. 8669-8677 (1994)

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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "Defects introduced by Ar plasma exposure in GaAs probed by a monoenergetic positron beam" Jpn. J. Appl. Phys. 33. L1374-L1377 (1994)

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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "Vacancy-type defects in ion implanted diamonds probed by monoenergetic positron beams" Jpn. J. Appl. Phys. 34. 1772-1777 (1995)

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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "Positron trapping at defects in vitreous silica at low temperature" J. Phys. Condens. Matter. 7. 5139-5149 (1995)

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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "Formation of oxygen-related defects enhanced by fluorine in BF_2-implanted Si studied by a monoenergetic positron beam" Jpn. J. Appl. Phys. 34. 6293-6297 (1995)

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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P^+-implanted Si studied by monoenergetic positron beams" Jpn. J. Appl. Phys. 35. 2000-2007 (1996)

    • Description
      「研究成果報告書概要(和文)」より
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      1996 Final Research Report Summary
  • [Publications] 大泊巌: "サイエンスとテクノロジーの共同のための一提案" 表面科学. 16. 223-223 (1995)

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      1996 Final Research Report Summary
  • [Publications] 大泊巌: "シングルイオン注入技術" 応用物理. 64. 777-781 (1995)

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      1996 Final Research Report Summary
  • [Publications] 上殿明良: "低速陽電子によるSiO_2膜の評価" 応用物理. 64. 43-46 (1995)

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      1996 Final Research Report Summary
  • [Publications] 谷川庄一郎: "固体中の電子の運動量を直接観測する陽電子消滅の2次元角相関測定装置" Renta Station. 35. 2-3 (1995)

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      1996 Final Research Report Summary
  • [Publications] 上殿明良: "陽電子消滅による高分子材料の評価" 高分子学会誌. 44. 136-140 (1995)

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  • [Publications] A.Uedono: "Free volumes in polystyrene probed by positron annihilation" Journal de Physique. 5,C1. 199-203 (1995)

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  • [Publications] A.Uedono: "Plasma induced defects in GaAs probed by a monoenergetic positron beam" Journal de Physique. 5,C1. 87-90 (1995)

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  • [Publications] A.Uedono: "Positron studies of oxide-semiconductor structures" Journal de Physique. 5,C1. 49-56 (1995)

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  • [Publications] A.Uedono: "Free volumes in liquid-crystalline main-chain polymer probed by positron annihilation" J. Polym. Sci.,Part B Physics. 29. 891-897 (1995)

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  • [Publications] A.Uedono: "Vacancy-oxygen complexes in Si probed by positron annihilation" Mater. Sci. Forum. 175-178. 553-556 (1995)

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  • [Publications] S.Fujii: "Study of various types of diamonds by measurements of double crystal X-ray diffraction and positron annihilation" J. Appl. Phys.78. 1510-1513 (1995)

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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "Positron annihilation in SiO_2/Si structure at low temperature" J. Appl. Phys.78. 3219-3273 (1995)

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      1996 Final Research Report Summary
  • [Publications] 上殿 明良: "陽電子消滅による高分子材料評価" 住友電気. 147. 168-173 (1995)

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  • [Publications] A.Uedono: "Defects in TiN films probed by monoenergetic positron beams" Jpn. J. Appl. Phy.34. 5505-5509 (1995)

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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "Characterization of metal/GaAs interfaces by a monoenergetic positron beam" Jpn. J. Appl. Phy.34. 5711-5716 (1995)

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      1996 Final Research Report Summary
  • [Publications] S.Fujii: "Characterization of diamond single crystals by means of double crystal X-ray diffraction and positron annihilation" Appl. Phys. A. 61. 331-333 (1995)

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      1996 Final Research Report Summary
  • [Publications] S.Tanigawa: "Defects in semicondactors observed by 2D-ACAR and by a slow positron beam" "Positron Spectroscopy in Solids" edited by A. Dupasquier and A・P,Mills Jr. (IOS press). 729-752 (1995)

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      1996 Final Research Report Summary
  • [Publications] A.Uedono: "A positron age-momentum correlation spectrometer for the study of open spaces in amorphous polymers" Nucl. Instr. & Meth. B. 103. 511-516 (1995)

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      1996 Final Research Report Summary
  • [Publications] 上殿 明良: "表面近傍での陽電子の基本的挙動とそれらを利用した材料評価" まてりあ. 35. 140-146 (1996)

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      1996 Final Research Report Summary
  • [Publications] 谷川庄一郎: "陽電子消滅法による材料評価および低速陽電子ビーム技術の将来の展望" まてりあ. 35. 165-173 (1996)

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      1996 Final Research Report Summary
  • [Publications] M.Ban: "Free volumes in polystyrene probed by positron annihilation" J. Polymer Science,Part B Physics. (in Press).

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      1996 Final Research Report Summary
  • [Publications] A.Waseda: "The electron-positron momentum density and Fermi surface in β'-AgZn" J. Phys. : Condens Matter. (in Press).

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      1996 Final Research Report Summary
  • [Publications] M.Tanaka: "X-ray crystal density method for the determination of the Avogadro number in a FZ silicon crystal" Int. Conf. on Precision Electro-Magnetic Measurements (Germany). (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Yamada: "Characterization of heavily phosphorus-doped Si films grown by plasma-CVD" Radiation Effects and Defects in Solids. (in press).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] R.Sadamoto: "Free volumes in nematic and sematic liquid-crystalline polymers by positron annihilation" J. Polymer Science,Part B. Physics. (in press).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] S.Tanigawa: "Positron Spectroscopy in Solids." A. Dupasquier and A. P. Mills Jr. (IOS press), 23 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 谷川 庄一郎: "「陽電子消滅」結晶成長ハンドブック" 共立出版, (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 谷川 庄一郎: "「陽電子」先端材料事典" 産業調査会, (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 谷川 庄一郎: "「陽電子」物性科学事典" (印刷中),

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 谷川 庄一郎: "「陽電子消滅」物性科学事典" (印刷中),

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 谷川 庄一郎: "「陽電子消滅」シリコンの科学" 半導体基盤技術研究会(印刷中),

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Tsukui: "Treatment of the wall materials of extremely high vacuum chamber for dynamical surface analysis" J.Vac.Sci.Tech.A11. 417-421 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Tsukui: "Extremely high vacuum system for dynamical surface analysis" J.Vac.Sci.Tech.A11. 2655-2658 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] N.Yagi: "An all metal extremely high vacuum cryopump" Vacuum. 44. 705-708 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Tsukui: "Control of the impurity on preparing the surface/interface of the material in the Extremery High Vacuum environment" Bulletin of the Japan Institute of Metals. 32. 901-902 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Theoretical consideration on dimer vacancy images in the STM observations of Si (001) surfaces in terms of the adsorption of O2 molecules" Surf.Sci.Lett.291. L763-L767 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "Evaluation of single-event immunity in micron-size device area using single-ion microprobe technique" Nucl.Instr.and Meth.B77. 239-242 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Fukuda: "Effect of deuterium anneal on SiO_2/Si (100) interface traps and electron spin resonance signals of ultrathin SiO_2 films" Jpn.J.Appl.Phys. 32. L569-L571 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Radiation effects induced by high energy He single ions at Si/SiO_2 interfaces" Proc.1st Int'l Symp.Control of Semiconductor Interfaces. 241-246 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I.Ohdomari: "Doping by Single Ion Implantation" Proc.1st Int'l Symp.Control of Semiconductor Interfaces. 233-240 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Oxidation mechanism of dimers on Si (001) surfaces" Proc.1st Int'l Symp.Control of Semiconductor Interfaces. 221-226 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koyama: "A trial to detect isolated defects in Si induced by single ion implantation" Proc.1st Int'l Symp.Control of Semiconductor Interfaces. 459-460 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I.Ohdomari: "Doping semiconductor fine structure by single ion implantation" Proc.of AMDP. 697-702 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Mechanism of O2 Molecule Adsorption and Subsquent Oxidation of Dimers on Si (001) Surfaces" Proc.Mat.Res.Soc.Sym.93-98 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Mechanisms of the Adsorption of Oxygen Moleacules and the Susequent Oxidation of the Reconstructed Dimers on Si (001) Surfaces" Phys.Rev.B,50. 14999-15008 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Development of the Single Ion Beam Induced Charge (SIBIC) Imaging Technique Using the Single Ion Microprobae System" Nucl.Instr and Meth.B93. 82-86 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Reverse-Mode Single Ion Beam Induced Charge (R-Mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)" Jpn.J.Apple.Phys. 33. L962-L965 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "Total dose Dependence of Soft-error Hardness in 64kbit SRAMS Evaluated by Single-Ion Microprobe Technique" IEEE Trans.Nucl.Sci.41. 2071-2076 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "Identification of Soft-Error Sensitive Junction in SRAMS Using a Single Ion Microprobe" IEEE Electron Device Letters. 15. 199-201 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Evidence for the leading role of the stacking-fault triangle in the Si (111) 1x1->7x7 phase transition" Phys.Rev.B,51. 14594-14597 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Tsukui: "Changes in transition temperature of the Si (111) 1x1-7x7 phase transition observed under various oxygen environments" Surface Science Letters. 328. L553-L560 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "High-Temperature Scanning Tunneling Microscopy (STM) Observation of Metastable Structures on Quenched Si (111) Surfaces" Japan Journal of Applied Physics. 34. 3346-3350 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Critial Domain Size of the 7x7 Structure for Nucleation and growth on Si (111) Quenched Surfaces" Physical Review Letters. 75. 2372-2375 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I.Ohdomari: "A proposal for the collaboration between science and technology" Journal of The Surface Science Society of Japan. 16. 223-223 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Kumamoto: "Effect of the adatom presence on stabilizing Si (111) nxn dimer-adatom-stacking fault structures" Physical Review. B52. 10784-10787 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I.Ohdomari: "Single Ion Implantation Technique" Oyo Buturi. 64. 777-781 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I.Ohdomari: "An example of the laboratory management on the university" The Journal of the itute of Electronics, Information and Communication Engineers. 79. 76-77 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Kumamoto: "Dynamic growth steps on n*n dimer-adatom-stacking-fault domains on the quenched Si (111) surface" Phys.Rev.B 53. 12907-12911 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Tanii: "Nonscalability of Alpha-Particle-Induced Charge Collection Area" Jpn.J.Appl.Phys.35. L688-L690 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe" Appl.Surf.Sci.104/105. 364-368 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Quantitative analysis of radiation induced Si/SiO_2 interface defects by means of MeV He single ion irradiation" Appl.Phys.Lett.68. 1552-1554 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Quantitative investigation of localized ion irradiation effects in nMOSFET using single ion microprobe" Appl.Phys.Lett.68. 3467-3469 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Origin of buckling-dimer-row formation of Si (001) surfaces" Phys.Rev.B 54. 11331-11339 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Hoshino: "Dynamic features in generation and disappearance of Si(111)-7x7 domains" Appl.Surf.Sci.107. 53-57 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koyama: "Quantitative analysis of degradation in Schottky diode characteristics induced by single ion implantation" Appl.Surf.Sci.104. 253-256 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "The effect of single ion implantation on semiconductor devices" Radiation & Industries. 69. 38-42 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "STM observation of "craters" on graphite surface induced by single ion implantation" Appl.Surf.Sci.107. 227-232 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "Evaluation of Soft-Error Hardness of DRAMs under Quasi-Heavy Ion Irradiation using He Single Ion Microprobe" IEEE Trans.Nucl.Sci.43. 2849-2855 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Quantitative estimation of generation rates of Si/SiO_2 interface defects by MeV He single ion irradiation" IEEE Trans.Nucl.Sci.43. 2952-2959 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Koh: "Quantitative characterization of Si/SiO_2 interface traps induced by energetic ions by means of SIMP and SIBIC imaging" Applied Surface Science. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Watanabe: "Mechanism of H_2 desorption from H-terminated Si (001) surfaces" Applied Surface Science. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Matsukawa: "Development of single ion implantation-controllability of implanted ion number" Applied Surface Science. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Shinada: "Fabrication of Thin Si Wires with Highly Controlled Feature Size" Applied Surface Science. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Uenodo: "Positron annihilation in proton irradiated Czochralski-grown Si" Jpn.J.Appl.Phys.33. 1-5 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Uenodo: "SiO_2 films deposited on Si substrates by monoenergetic positron beams" J.Appl.Phys.75. 216-222 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Uenodo: "The positronium formation in SiO_2 films grown on Si substrates studied by monoenergetic positron beams" J.Appl.Phys.75. 3822-3828 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Uenodo: "Defects in electron irradiated vitreous SiO_2 probed by positron annihilation" J.Phys.Condens.Matter. 6. 8669-8677 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Uenodo: "Defects introduced by Ar plasma exposure in GaAs probed by a monoenergetic positron beam" Jpn.J.Appl.Phys.33. L1374-L1377 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Uenodo: "Vacancy-type defects in ion implanted diamonds probed by monoenergetic positron beams" Jpn.J.Appl.Phys.34. 1772-1777 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Uenodo: "Positron trapping at defects in vitreous silica at low temperature" J.Phys.Condens.Matter. 7. 5139-5149 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] S.Tanigawa: "Defects in semiconductors observed by 2D-ACAR and by a slow positron beam" "Positron Spectroscopy in Solids" edited by A.Dupasquier and A.P.Mills Jr. (IOS press, 1995). 729-752

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Uenodo: "Formation of oxygen-related defects enhanced by fluorine in BF_2-implanted Si studied by a monoenergetic positron beam" Jpn.J.Appl.Phys.34. 6293-6297 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Uenodo: "Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P^+ -implanted Si studied by monoenergetic positron beams" Jpn.J.Appl.Phys.35. 2000-2007 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 大泊巌: "大学における研究室運営の一例" 電子情報通信学会誌. 79. 76-77 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.Kumamoto: "Dynamic growth steps of nxn dimer-adatom-stacking-fault domains on the quenched Si(III) surface" Physical Review B. 53. 12907-12911 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Matsukawa: "Evaluation of Soft-Error Hardness of DRAMs under Quasi-Heavy Ion Irradiation using He Single Ion Microprobe" IEEE Trans.Nucl.Sci. 43. 2849-2855 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Matsukawa: "STM observation of "craters" on graphite surface Induced by single ion implantation" Appl.Surf.Sci.107. 227-232 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Tanii: "Nonscalability of Alpha-Particle-Induced Charge Collection Area" Jpn.J.Appl.Phys.35. L688-L690 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Koh: "Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe" Appl.Surf.Sci.104/105. 364-368 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Koh: "Quantitative characterization of Si/SiO_2 interface traps induced by energetic ions by means of SIMP and SIBIC imaging" Appl.Surf.Sci.(to be published).

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Shinada: "Fabrication of Thin Si Wired with Highly Controlled Feature Size" Appl.Surf.Sci.(to be published).

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Matsukawa: "Development of single ion implantation-controllability of implanted ion number" Appl.Surf.Sci.(to be published).

    • Related Report
      1996 Annual Research Report
  • [Publications] 上殿明良: "表面近傍での陽電子の基本的挙動とそれらを利用した材料評価" まてりあ. 35. 140-146 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 谷川庄一郎: "陽電子消滅法による材料評価および低速陽電子ビーム技術の将来の展望" まてりあ. 35. 165-173 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 谷川庄一郎: "陽電子消滅による点欠陥の評価(3)" ウルトラクリーンテクノロジー. 8. 125-129 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Koh: "Quantitative analysis of radiation induced Si/SiO_2 interface defects by means of MeV He single ion irradiation" Appl.Phys.Lett.68. 1552-1554 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Koh: "Quantitative investigation of localized ion irradiation effects in nMOSFET using single ion microprobe" Appl.Phys.Lett.68. 3467-3469 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Koh: "Quantitative estimation of generation rates of Si/SiO_2 interface defects by MeV He single ion irradiation" IEEE Trans.Nucl.Sci.43. 2952-2959 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Koyama: "Quantitative analysis of degradation in Schottky diode characteristics induced by single ion implantation" Appl.Surf.Sci.104. 253-256 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Hoshino: "Origin of buckling-dimer-row formation of Si(001) surfaces" Phys.Rev.B. 54. 11331-11339 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Watanabe: "Mechanism of H_2 desorption from H-terminated Si(001) surfaces" Appl.Surf.Sci.(to be published).

    • Related Report
      1996 Annual Research Report
  • [Publications] A.Uedono: "Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P^+-implanted Si studied by monoenergetic positron beams" Jpn.J.Appl.Phys.35. 2000-2007 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 谷川庄一郎: "分光法から見た酸化物超電導メカニズムの解明:陽電子消滅法による酸化物高温超伝導体の電子構造" 新超電導材料研究会会報(未踏科学技術協会). 56. 18-23 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] R.Sadamoto: "Free volumes in nematic and smectic liquid-crystalline polymers probed by positron annihilation" J.Polymer Science,Part B Physics. 34. 1659-1664 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Ban: "Free volumes in polystyrene probed by positron annhilation" J.Polymer Science,Part B Physics. 34. 1189-1195 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 谷川庄一郎: "陽電子消滅による点欠陥の評価(5)" ウルトラクリーンテクノロジー. 8. 276-285 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Tanigawa: "Positron spectroscopy of defects in Si crystals" Proc.the 10th Korean Association of Crystal Growth Summer Seminar. 15-17 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.Uedono: "Study of relaxation processes in polyethylene and polystyrene by positron annihilation" J.Polymer Sci.Part B Physics. 34. 2143-2149 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 上殿明良: "陽電子消滅による高分子のガラス転移と緩和現象の検出" 高分子論文集. 53. 563-574 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.Uedono: "Thermal equilibrium defects in anthracene probed by positron annhilation" Jpn.J.Appl.Phys.35. 3623-3629 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.Uedono: "Defects in ion implanted 3C-SiC probed by a monoenergetic positron beam" Jpn.J.Appl.Phys.35. 5986-5990 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 谷川庄一郎: "陽電子消滅による点欠陥の評価(4)" ウルトラクリーンテクノロジー. 8. 196-203 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 谷川庄一郎: "シリコンの科学「陽電子消滅」" 半導体基盤技術研究会, 6(769〜774) (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 谷川庄一郎: "最新技術講座資料集「シリコン結晶欠陥のメカニズムと評価技術」" リアライズ社, 30(1〜30) (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1993-04-01   Modified: 2018-03-28  

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