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CONTROL OF FREE RADICALS FOR CONSTRUCTION OF MESOSCOPIC STRUCTURES OF MATERIALS

Research Project

Project/Area Number 05237102
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Research InstitutionTOKYO INSTITUTE OF TECHNOLOGY

Principal Investigator

SHIMIZU Isamu  Tokyo Inst.Tech., Interdisciplinary Graduate School, Professor, 大学院・総合理工学研究科, 教授 (40016522)

Co-Investigator(Kenkyū-buntansha) ODA Shyunri  Tokyo.Inst.Tech., Eng.Dept.Professor, 量子エレクトロニクス研究センター, 教授 (50126314)
ITAYA Kingo  Tohoku Univ.Eng.Dept.Professor, 工学部, 教授 (40125498)
MATSUDA Akihisa  Electrotechnical Lab.Chief Scientist, 室長
HIROSE Masataka  Hiroshima Univ.Eng.Dept.Professor, 工学部, 教授 (10034406)
Project Period (FY) 1993 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥78,200,000 (Direct Cost: ¥78,200,000)
Fiscal Year 1995: ¥22,000,000 (Direct Cost: ¥22,000,000)
Fiscal Year 1994: ¥30,600,000 (Direct Cost: ¥30,600,000)
Fiscal Year 1993: ¥25,600,000 (Direct Cost: ¥25,600,000)
Keywordsmesoscopic structure / semiconductors / in situ observation / surface reaction / silicon / spectroscopic ellipsometry / ATM-AFM / quantum size effects / フリーラジカル / 原子レベル制御 / 新機能創製 / 自己組織化 / アモルフアス・シリコン / ポリシリコン
Research Abstract

The real time control of the mososcopic structures of semiconductors was made by means of free radicals under the in situ observation with spectroscopic ellipsometry, STM (AFM) in an aqueous solution, FTIR-ATR,etc.Followings are the outstanding findings resulted in : (1) High quality hydrogenated amorphous silicon with the gaps from 1.55eV to 2.10eV was fabricated by controlling the medium range structures with the aid of free radicals during the growth, so called "Chemical Annealing". (2) High quality polycrystalline silicon thin films were grown on glass substrate under control of the surface reaction under the in situ observation with spectroscopic ellipsometry. (3) Novel technique termed the high fluidity CVD was developed by controlling surface reaction of free radicals under the observation with FTIR-ATR for making fine patterns on Si wafer. (4) A diagnostic study was carried out on the free radicals generated in plasma for the aim of making high quality amorphous silicon. Consequently, a-Si : H films showing high carriers mobility were achieved by the precise control of ions impinging on the growing surface. (5) The mechanism in atomic scale was revealed for the chemical etching of Si (111), (001) with HF or NH4F solution under the real time observation with STM (AFM) under controlling the electrochemical potentials. (6) Silicon nanocrystalline particles were fabricated by controlling hydrogen plasma and were manipulated with a AFM.Some quanmsize effets such as a single electron tunneling and the emission of visible light were practically observed in the particles.

Report

(4 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • 1993 Annual Research Report
  • Research Products

    (44 results)

All Other

All Publications (44 results)

  • [Publications] R.W.Collins,I.Shimizu: "Insitu observation using spectroscopic ellipsometry of surface of semiconductive thin films" OYO-BUTSURI. 65. 237-243 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Akasaka and I.Shimizu: "Fabrication of high-quality poly-Si thin films combined with in situ real-time spectroscopic ellipsometry" J.Non-cryst.Solids. 198-200. 883-886 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y.Miyoshi,Y.Yoshida,S.Miyazaki,M.Hirose: "Real time observation of surface reactions during a-Si:H deposition or H_2 plasma annealing by using FTIR-ATR" J.Non-cryst.Solids. 198-200. 1029-1033 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] G.Ganguly,A.Matuda: "Control of the electron and hole drift mobilities in plasma deposited s-Si:H" Mat.Res.Soc.Proc.336. 336-346 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S-L.Yau,K.Kaji and K.Itaya: "Electrochemical etching Si(001)in NH_4F solution" Appl.Phys.Lett.66. 766-768 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Otabe,T.Katani,T.Ifuku,H.Yajima and S.Oda: "Nanocrystalline silicon formation in SiH_4 plasma cells" J.Non-cryst.Solids. 198-200. 875-878 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S.Oda: "Preparation of nanocrystalline silicon quantum dot structure by pulsed plasma" Adv.Coolid and Interface Sci., 875-878 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y.Gao and K.Itaya: "The handbook of surface imaging and visualiztion" CRC press,Boca Raton,USA, 681 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] R.Collins, I.Shimizu: "In situ observation using spectroscopic ellipsometry of surface of semi-conductive thin films" OyoButsuri. 65 (3). 237-243 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Akasaka, I.Shimizu: "Fabrication of high qualitypoly-Si thin films combined with in situ time-time spectroscopic ellipsometry" J.Non-cryst.Solids. 198-200. 883-886 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y.Miyoshi, Y.Yoshida, S.Miyazaki, M.Hirose: "Real time observation of surface reactions during a-Si : H deposition of H2 plasma annealing by using FTIR-ATR" J.Non-cryst.Solids. 198-200. 1029-1033 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] G.Ganguly, A.Matsuda: "Control of the electron and hole drift mobilities in plasma deposited a-Si : H" Mat.Res.Soc.Symp.Proc.336. 336-346

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S.-L.Yau, K.Kaji, K.Itaya: "Electrochemical etching Si (001) in NH4F solution" Appl.Phys.Lett.66. 766-768 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Otabe, T.Katani, T.Ifuku, H.Yajima, S.Oda: "Nano crystalline silicon formation in SiH4 plasma cells" J.Non-cryst.Solids. 198-200. 875-878 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S.Oda: Preparation of nanocrystalline silicon quantum dot structure by pulsed plasma. Adv.Coolid and Interface Sci, 875-878 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y.Gao and K.Itaya: The Handbook of Surface Imaging and Visualization. CRC press, Boca Roton, USA, 681 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Akasaka: "In situ real time studies of the formation of polycrystalline siliconfilms on glass grown by a layer-by-layer technique" Appl. Phys. Lett.66. 3441-3443 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Nakamura: "Roles of atomic hydrogen in chemical annealing" Jpn. J. Appl. Phys.34. 442-449 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] S. L. Yau: "Electrochemical etching of Si(001)in NH_4F solution: Initial stage and {111} microfacet formation" Appl. Phys. Lett.66. 766-768 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K. kaji: "Atomic scale etching process ofn-Si(111)in NH_4F solution: In situ scanning tunneling microscopy" J. Appl. Phys.78. 5727-5733 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Otobe: "Fabrication of nanocrystalline Si by SiH_4 plasma cell" Mat. Res. Soc. Symp. Proc.377. 51-56 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Azuma: "Relation between defect densityand local structure of a-Si: H" Mat. Res. Soc. Symp. Proc.377. 191-196 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] I.S.Osborne: "Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by rf plasma chemical vapour deposition" Appl. Phys. Lett.66. 965-967 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] I.S.Osborne: "Plasma enhanced chemical vapor deposition hydrogenated amorphous silicon from dichlorosilane and silane gasmixtures" Jpn. J. Appl. Phys.34. L536-L538 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] A.Matsuda: "Improvement of hydrogenated amorphous silicon germanium alloy using lw power disilane discharges without hydrogen dilution" Appl. Phys. Lett.67. 1274-1276 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Y.Gao: "In siru structural investigation of surface imaging and visualization" CRC Press, Boca Raton USA, 40 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Nakamura: "Roles of atomic hydrogen in Chemical Annealing" Jpn.J.Appl.Phys.34. 442-449 (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] De-YanHe: "Carrier transport in polycrystalline silicon films deposited by a layer-by-layer technique" J.Appl.Phys.76. 4728-4733 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] T.Yokoi: "Fabrication of stable hydrogenated amorphous silicon from SiH_2Cl_2 by ECR-hydrogen-plasma" Solar Energy Materials and Solar Cells. 34. 517-523 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Y.Miyoshi: "In Situ Observation of Surface Reactions during Plasma Enhanced CVD Using FT-IR-ATR" Proceeding of the 16th Symposium on Dry Process. 151-155 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 広瀬全孝: "高流動性プラズマCVDによる薄膜形成" 応用物理. 63. 1118- (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Gautam Ganguly: "Growth Process of a-Si:H" Optoelectromics-Devices and Technologies-. 9. 269-276 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Gautam Ganguly: "Reduction of the defect density in hydrogenated amorphous silicon by thermally energized growth precursor" Appl.Phys.Letters. 64. 3581-3583 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Ian S.Osborne: "The effect of mesh bias and substrate bias on the properties of a-Si:H deposited by triode plasma chemical vapour deposition" Jpn.J.Appl.Phys.33. 5663-5667 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] T.Abe: "Total Inhibition of the Oxygen Reduction Reaction at Au(111)by Copper Adlayers in Sulfuric Acid Solution" Bulletin of the Chemical Society of Japan. 67. 2075-2078 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] L.-J.Wan: "In Situ Scanning Tunneling Microscopy of Well Ordered Rh(111)Electrodes" Journal of the Electroanalytical Chemistry and Interfacial Electrochemistry. (in press). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] M.Otobe: "Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma" Jpn.J.Appl.Phys.33. 4442-4445 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Oda: "Preparation of Nanocrystalline Silicon by Pulsed Plasma Processing" Materials Research Society Symposium Proceedings. 358(in press). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] H.Shin,M.Hashimoto,K.Okamoto,S.Miyazaki and M.Hirose: "High-Fluidity Deposition of Silicon by Plasma-Enhanced Chemical Vapor Deposition Using Si_2H_6 or SiH_4" Japanese Journal of Applied Physics. 32. 3081-3084 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] S.Sugita,T.Abe,and K.Itaya: "Electrochemical Scanning Tunneling Microscopy of Silver Adlayers on Iodine Coated Au(111)in Perchloric Acid Solution" Appl.Phys.Lett.97. 8780-8785 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] G.Ganguly and A.Matsuda: "Defect Formation During Growth of Hydrogenated Amorphous Silicon" Phys.Rev.B. 47. 91-96 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K Nakamura,T.Akasaka,K.Araki,H.Ishida,I.Shimizu: "Structural relaxation in Si network induced by atomic hydrogen under observation with in situ ellipsometry" J.Non-Cryst.Solids. (印刷中). (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Azuma,T.Yokoi,I.Shi-iya,and I.Shimizu: "Stable a-Si:H fablicated from halogenous silane by ECR hydrogen plasma" J.Non-Cryst.Solids. (印刷中). (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Otobe,M.Kimura,S.Oda: "Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma" Japanese Journal of Applied Physics. (印刷中). (1994)

    • Related Report
      1993 Annual Research Report

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Published: 1993-04-01   Modified: 2016-04-21  

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