| Project/Area Number |
05402050
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| Research Category |
Grant-in-Aid for General Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Structural/Functional materials
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
MURAKAMI Masanori Kyoto Univ., Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (70229970)
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| Co-Investigator(Kenkyū-buntansha) |
OKU Takeo Kyoto Univ., Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (30221849)
OTUKI Akira Kyoto Univ., Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (10026148)
KOIDE Yasuo Kyoto Univ., Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (70195650)
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| Project Period (FY) |
1993 – 1995
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| Project Status |
Completed (Fiscal Year 1995)
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| Budget Amount *help |
¥18,200,000 (Direct Cost: ¥18,200,000)
Fiscal Year 1995: ¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 1994: ¥5,400,000 (Direct Cost: ¥5,400,000)
Fiscal Year 1993: ¥9,200,000 (Direct Cost: ¥9,200,000)
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| Keywords | INTERMETALLIC COMPOUNDS / THIN FILMS / FUMCTIONAL MATERIALS / ELECTRONIC MATERIALS |
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| Research Abstract |
Refractory NiGe Ohmic contacts which had excellent thermal stability and smooth surface had been developed. To apply this contacts to the future very large scale integration (VLSI) GaAs devices, reduction of the contact resistance (R_C) of the NiGe contacts are mandatory. In the present paper, in order to obtain a guideline for the R_C reduction, the formation mechanism of the NiGe contacts was investigated. The NiGe contacts were found to have two different Ohmic contact formation mechanisms. These mechanisms suggested that facilitation of heavy doping at the GaAs surface and/or in the Ge layr was very effective to reduce the R_C values of the NiGe contacts.
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