| Project/Area Number |
05452092
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | CHIBA UNIVERSITY |
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Principal Investigator |
YOSHIKAWA Akihiko CHIBA UNIV., FACULTY OF ENG., PROFESSOR, 工学部, 教授 (20016603)
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| Co-Investigator(Kenkyū-buntansha) |
KOBAYASHI Masakazu CHIBA UNIV., FACULTY OF ENG., ASSOC.PROF., 工学部, 助教授 (10241936)
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| Project Period (FY) |
1993 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥6,300,000 (Direct Cost: ¥6,300,000)
Fiscal Year 1994: ¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 1993: ¥3,300,000 (Direct Cost: ¥3,300,000)
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| Keywords | real time monitoring / optical probing / suface photo-interference / compound semiconductors / hetero epitaxy / zinc selenide / MOVPE / SPI / エピタキシー / 結晶成長 |
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| Research Abstract |
A new in-situ optical probing method for studying surface reactions during heteroepitaxial growth has been proposed. The new method was named surface photo-interference (SPI) , because the concept of the SPI is essentially concerned with a photo-interference in the heteroepilayr. The experimental setup of the method is very similar to another optical probing method called surface photo-absorption (SPA) , but the principle is quite different between the two. Unlike SPA,fairly low energy photons that are transparent for the epilayr can also be used in SPI as a probing light. Reflecting this feature, SPI is especially useful for studying growth kinetics in heteroepitaxial growth of widegap II-VI compounds, because the effect of photocatalytic growth-rate enhancement can be avoided when using such low energy photons as a probing light. A theoretical description of SPI signal was given, and experimental results detected in MOMBE of ZnSe and CdSe were precisely discussed. Further, how SPI differs from SPA has also been discussed.
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